on sapphire substrates

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H01L29/6678

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/6678on sapphire substrates

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory array contact structures
- Patent number 12,225,731
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin field-effect transistor device with low-dimensional material an...
- Patent number 12,211,931
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming three-dimensional memory devices
- Patent number 12,167,608
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 12,125,916
- Issue date Oct 22, 2024
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,125,900
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-step nanosheet structure for stacked field-effect transistors
- Patent number 12,119,264
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside gate contact, backside gate etch stop layer, and methods o...
- Patent number 12,119,271
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,100,750
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,051,732
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Hao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap spacer for backside contact structure
- Patent number 12,046,644
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around structure with self substrate isolation and methods...
- Patent number 12,046,681
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with negative capacitance layers
- Patent number 12,027,605
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 12,022,659
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Lightly-doped channel extensions
- Patent number 12,015,090
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protrusion field-effect transistor and methods of making the same
- Patent number 11,990,514
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,978,734
- Issue date May 7, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,978,805
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Soonmoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels and manufa...
- Patent number 11,955,384
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures in multi-gate semiconductor devices and method...
- Patent number 11,948,998
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation structure
- Patent number 11,923,361
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi-Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 11,916,114
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structure
- Patent number 11,848,353
- Issue date Dec 19, 2023
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,830,919
- Issue date Nov 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with negative capacitance layers
- Patent number 11,769,818
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,764,267
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method
- Patent number 11,710,780
- Issue date Jul 25, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,699,763
- Issue date Jul 11, 2023
- Samsung Electronics Co., Ltd.
- Dong-hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and fabrication method of field-effect tran...
- Patent number 11,664,440
- Issue date May 30, 2023
- Huawei Technologies Co., Ltd.
- Xiaolong Ma
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory array contact structures
- Patent number 11,653,500
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,621,344
- Issue date Apr 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015165
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413225
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICES, COMPOSITE SUBSTRATES THEREFOR, AND...
- Publication number 20240395913
- Publication date Nov 28, 2024
- THE TRUSTEES OF INDIANA UNIVERSITY
- Haitham Kanakri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240389334
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacers for Semiconductor Devices Including Backside Power Rails
- Publication number 20240387249
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240363714
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Hao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS...
- Publication number 20240339545
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHTLY-DOPED CHANNEL EXTENSIONS
- Publication number 20240339544
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME
- Publication number 20240266399
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...
- Publication number 20240250152
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
- Publication number 20240194674
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Ning JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures in Transistors and Method of Forming Same
- Publication number 20240162303
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240063294
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021479
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS
- Publication number 20230378317
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230238451
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Sheng YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230197858
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- SOONMOON JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME
- Publication number 20230170387
- Publication date Jun 1, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230143927
- Publication date May 11, 2023
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire Structures Having Non-Discrete Source and Drain Regions
- Publication number 20230111689
- Publication date Apr 13, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230080688
- Publication date Mar 16, 2023
- MEDIATEK INC.
- Po-Chao TSAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Three-Dimensional Memory Devices
- Publication number 20230076806
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230066954
- Publication date Mar 2, 2023
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230042793
- Publication date Feb 9, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- TIEH-CHIANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE AND STRUCTURE THEREOF
- Publication number 20220393020
- Publication date Dec 8, 2022
- Changxin Memory Technologies, Inc.
- Youming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Device and Method
- Publication number 20220367517
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...
- Publication number 20220367684
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...
- Publication number 20220367685
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS
- Publication number 20220359503
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHTLY-DOPED CHANNEL EXTENSIONS
- Publication number 20220359769
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS

on sapphire substrates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory array contact structures

Fin field-effect transistor device with low-dimensional material an...

Methods of forming three-dimensional memory devices

Nanowire structures having non-discrete source and drain regions

Semiconductor device and method for fabricating the same

Non-step nanosheet structure for stacked field-effect transistors

Backside gate contact, backside gate etch stop layer, and methods o...

Semiconductor device and method for fabricating the same

Semiconductor structure and method for forming the same

Gap spacer for backside contact structure

Gate-all-around structure with self substrate isolation and methods...

Field effect transistors with negative capacitance layers

Three-dimensional memory device and method

Lightly-doped channel extensions

Protrusion field-effect transistor and methods of making the same

Semiconductor structure and method of forming the same

Semiconductor device

Stacked semiconductor device with nanostructure channels and manufa...

Isolation structures in multi-gate semiconductor devices and method...

Semiconductor device with isolation structure

Gate structures in transistors and method of forming same

Method of fabricating semiconductor structure

Semiconductor device and method for fabricating the same

Field effect transistors with negative capacitance layers

Semiconductor device and fabricating method thereof

Semiconductor device fabrication method

Semiconductor device

Field-effect transistor and fabrication method of field-effect tran...

Memory array contact structures

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR SWITCHING DEVICES, COMPOSITE SUBSTRATES THEREFOR, AND...

METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES

Spacers for Semiconductor Devices Including Backside Power Rails

SEMICONDUCTOR STRUCTURE

GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS...

LIGHTLY-DOPED CHANNEL EXTENSIONS

PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME

ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...

SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE

Gate Structures in Transistors and Method of Forming Same

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Nanowire Structures Having Non-Discrete Source and Drain Regions

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

Methods of Forming Three-Dimensional Memory Devices

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE AND STRUCTURE THEREOF

Three-Dimensional Memory Device and Method

ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...

ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...

FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS

LIGHTLY-DOPED CHANNEL EXTENSIONS