on single crystalline silicon, e.g. using a liquid

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H01L21/28167

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28167on single crystalline silicon, e.g. using a liquid

Industries

Patents Grantslast 30 patents

Information Patent Grant
Structure and method for FinFET device with buried sige oxide
- Patent number 11,735,650
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,728,429
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,728,219
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,559
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,560
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating high-voltage (HV) transistor
- Patent number 11,488,837
- Issue date Nov 1, 2022
- United Microelectronics Corp.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with integrated memory devices and MOS devices...
- Patent number 11,444,095
- Issue date Sep 13, 2022
- United Microelectronics Corp.
- Wang Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with buried SiGe oxide
- Patent number 11,380,783
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,239,082
- Issue date Feb 1, 2022
- United Microelectronics Corp.
- I-Fan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a dual-cavity pressure sensor die
- Patent number 11,226,251
- Issue date Jan 18, 2022
- Chinese Academy of Sciences Institute of Geology and Geophysics
- Yiming Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,222,978
- Issue date Jan 11, 2022
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,142,844
- Issue date Oct 12, 2021
- GlobalWafers Co., Ltd.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coating liquid for forming oxide, method for producing oxide film,...
- Patent number 11,069,780
- Issue date Jul 20, 2021
- Ricoh Company, Ltd.
- Ryoichi Saotome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, electronic apparatus, and method of manufactu...
- Patent number 11,069,801
- Issue date Jul 20, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hirokazu Ejiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,031,293
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with integrated memory devices and MOS devices...
- Patent number 11,011,535
- Issue date May 18, 2021
- United Microelectronics Corp.
- Wang Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,011,428
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench power devices with oxygen inserted Si-layers
- Patent number 10,861,966
- Issue date Dec 8, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-cavity pressure sensor die and the method of making same
- Patent number 10,809,141
- Issue date Oct 20, 2020
- Chinese Academy of Sciences Institute of Geology and Geophysics
- Yiming Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Structure and method for FinFET device with buried sige oxide
- Patent number 10,804,381
- Issue date Oct 13, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transferable silica bilayer film
- Patent number 10,763,102
- Issue date Sep 1, 2020
- Fritz Haber Institut der Max Planck Gesellschaft
- Hans-Joachim Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device and method for fabricating the same
- Patent number 10,720,426
- Issue date Jul 21, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,629,695
- Issue date Apr 21, 2020
- United Microelectronics Corp.
- Shih-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers in vertical trench power devices
- Patent number 10,573,742
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing high-k film nucleation rate and electrical mobi...
- Patent number 10,522,343
- Issue date Dec 31, 2019
- Tokyo Electron Limited
- Kandabara N. Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature polysilicon thin film transistor and preparation me...
- Patent number 10,516,058
- Issue date Dec 24, 2019
- WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Donghui Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method for manufacturing semiconductor device
- Patent number 10,508,343
- Issue date Dec 17, 2019
- Fujitsu Limited
- Shirou Ozaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 10,490,452
- Issue date Nov 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 10,475,813
- Issue date Nov 12, 2019
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitance reduction for replacement gate CMOS
- Patent number 10,439,041
- Issue date Oct 8, 2019
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
- Publication number 20230010954
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220102555
- Publication date Mar 31, 2022
- Samsung Electronics Co., Ltd.
- Yul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING HIGH-VOLTAGE (HV) TRANSISTOR
- Publication number 20220093411
- Publication date Mar 24, 2022
- United Microelectronics Corp.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20220056616
- Publication date Feb 24, 2022
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20210404088
- Publication date Dec 30, 2021
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20210272850
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED MEMORY DEVICES AND MOS DEVICES...
- Publication number 20210233924
- Publication date Jul 29, 2021
- UNITED MICROELECTRONICS CORP.
- Wang Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
- Publication number 20210083079
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Making a Dual-Cavity Pressure Sensor Die
- Publication number 20210003468
- Publication date Jan 7, 2021
- Chinese Academy of Sciences Institute of Geology and Geophysics
- Yiming ZHANG
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20200216975
- Publication date Jul 9, 2020
- GlobalWafers Co., Ltd
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTU...
- Publication number 20200194582
- Publication date Jun 18, 2020
- Sony Semiconductor Solutions Corporation
- Hirokazu Ejiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20200194459
- Publication date Jun 18, 2020
- Vanguard International Semiconductor Corporation
- Chia-Ming HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127135
- Publication date Apr 23, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR
- Publication number 20200083052
- Publication date Mar 12, 2020
- Applied Materials, Inc.
- Yujia ZHAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20200051865
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20200051864
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers in Vertical Trench Power Devices
- Publication number 20200052110
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20190295849
- Publication date Sep 26, 2019
- UNITED MICROELECTRONICS CORP.
- I-Fan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20190280123
- Publication date Sep 12, 2019
- Samsung Electronics Co., Ltd.
- Yul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR AND PREPARATION ME...
- Publication number 20190221672
- Publication date Jul 18, 2019
- WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Donghui Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR
- Publication number 20190206691
- Publication date Jul 4, 2019
- Applied Materials, Inc.
- Yujia ZHAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A DUAL-CAVITY PRESSURE SENSOR DIE AND THE METHOD OF MAKING SAME
- Publication number 20190145842
- Publication date May 16, 2019
- Institute of Geology and Geophysics, Chinese Academy of Sciences
- Yiming ZHANG
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
TRANSFERABLE SILICA BILAYER FILM
- Publication number 20190103269
- Publication date Apr 4, 2019
- Fritz Haber Institut Der Max Planck Gesellschaft
- Hans-Joachim Freund
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190088643
- Publication date Mar 21, 2019
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190081152
- Publication date Mar 14, 2019
- Samsung Electronics Co., Ltd.
- Sung In Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190043725
- Publication date Feb 7, 2019
- UNITED MICROELECTRONICS CORP.
- I-Fan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A T-SHAPED GATE ELECTRODE
- Publication number 20180269295
- Publication date Sep 20, 2018
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180240804
- Publication date Aug 23, 2018
- SK HYNIX INC.
- Hyangkeun YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AVOIDING IL REGROWN IN A HKMG PROCESS
- Publication number 20180175157
- Publication date Jun 21, 2018
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Yingming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
- Publication number 20180102419
- Publication date Apr 12, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS

on single crystalline silicon, e.g. using a liquid

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Structure and method for FinFET device with buried sige oxide

Method of fabricating semiconductor device

Method for fabricating a semiconductor device

High resistivity single crystal silicon ingot and wafer having impr...

High resistivity single crystal silicon ingot and wafer having impr...

Method for fabricating high-voltage (HV) transistor

Semiconductor device with integrated memory devices and MOS devices...

Structure and method for FinFET device with buried SiGe oxide

Method for fabricating semiconductor device

Method of making a dual-cavity pressure sensor die

Semiconductor device and method of fabricating the same

High resistivity single crystal silicon ingot and wafer having impr...

Coating liquid for forming oxide, method for producing oxide film,...

Semiconductor device, electronic apparatus, and method of manufactu...

Method for fabricating a semiconductor device

Semiconductor device with integrated memory devices and MOS devices...

Method for fabricating a semiconductor device

Vertical trench power devices with oxygen inserted Si-layers

Dual-cavity pressure sensor die and the method of making same

Structure and method for FinFET device with buried sige oxide

Transferable silica bilayer film

Three dimensional memory device and method for fabricating the same

Semiconductor device and method for fabricating the same

Oxygen inserted Si-layers in vertical trench power devices

Method of enhancing high-k film nucleation rate and electrical mobi...

Low temperature polysilicon thin film transistor and preparation me...

Etching method for manufacturing semiconductor device

Method for fabricating a semiconductor device

Ferroelectric memory device and method of manufacturing the same

Fringe capacitance reduction for replacement gate CMOS

Patents Applicationslast 30 patents

Structure and Method for FinFET Device with Buried Sige Oxide

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING HIGH-VOLTAGE (HV) TRANSISTOR

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH INTEGRATED MEMORY DEVICES AND MOS DEVICES...

Structure and Method for FinFET Device with Buried Sige Oxide

Method of Making a Dual-Cavity Pressure Sensor Die

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTU...

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

Vertical Trench Power Devices with Oxygen Inserted Si-Layers

HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

Oxygen Inserted Si-Layers in Vertical Trench Power Devices

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR AND PREPARATION ME...

HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR

A DUAL-CAVITY PRESSURE SENSOR DIE AND THE METHOD OF MAKING SAME

TRANSFERABLE SILICA BILAYER FILM

THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FIELD-EFFECT TRANSISTORS WITH A T-SHAPED GATE ELECTRODE

FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR AVOIDING IL REGROWN IN A HKMG PROCESS

Structure and Method for FinFET Device with Buried Sige Oxide