on thin film AIII-BV compounds

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/454on thin film AIII-BV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Forming semiconductor structures with two-dimensional materials
- Patent number 12,046,665
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element comprising a MIM capacitor and a via hole, a...
- Patent number 11,881,516
- Issue date Jan 23, 2024
- Mitsubishi Electric Corporation
- Kohei Miki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device and method for manufacturing t...
- Patent number 11,810,783
- Issue date Nov 7, 2023
- Denso Corporation
- Chiaki Sasaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure with reduced contact resistance...
- Patent number 11,791,407
- Issue date Oct 17, 2023
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and display substrate having the same
- Patent number 11,769,834
- Issue date Sep 26, 2023
- Samsung Display Co., Ltd.
- Jong Yun Kim
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Ohmic contact for multiple channel FET
- Patent number 11,605,722
- Issue date Mar 14, 2023
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming semiconductor structures with two-dimensional materials
- Patent number 11,600,720
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 11,551,927
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts and methods for manufacturing the same
- Patent number 11,195,721
- Issue date Dec 7, 2021
- Princeton Optronics, Inc.
- Guoyang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire light emitting switch devices and methods thereof
- Patent number 11,011,571
- Issue date May 18, 2021
- INNOVATION SEMICONDUCTOR
- Matthew Hartensveld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming semiconductor structures with two-dimensional materials
- Patent number 11,004,965
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 10,867,792
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organic thin film transistor, method of manufacturing organic thin...
- Patent number 10,131,656
- Issue date Nov 20, 2018
- FUJIFILM Corporation
- Hiroaki Tsuyama
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Capacitively-coupled field-plate structures for semiconductor devices
- Patent number 9,887,268
- Issue date Feb 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium arsenide based materials used in thin film transistor appli...
- Patent number 9,780,223
- Issue date Oct 3, 2017
- Applied Materials, Inc.
- Kaushal K. Singh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of manufacturing the same, and powe...
- Patent number 9,741,662
- Issue date Aug 22, 2017
- Fujitsu Limited
- Youichi Kamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making III-V nanowire quantum well transistor
- Patent number 9,640,615
- Issue date May 2, 2017
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature ohmic contacts for III-N power devices
- Patent number 9,634,107
- Issue date Apr 25, 2017
- IMEC
- Brice De Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,136,396
- Issue date Sep 15, 2015
- Electronics and Telecommunications Research Institute
- Sang Choon Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned III-V field effect transistor (FET) and integrated cir...
- Patent number 8,604,519
- Issue date Dec 10, 2013
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned III-V field effect transistor (FET), integrated circui...
- Patent number 8,466,493
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS
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- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
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STRUCTURE WITH PHOTODIODE, HIGH ELECTRON MOBILITY TRANSISTOR, SURFA...
- Publication number 20240162208
- Publication date May 16, 2024
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS
- Publication number 20230170406
- Publication date Jun 1, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...
- Publication number 20230162976
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR EL...
- Publication number 20220416015
- Publication date Dec 29, 2022
- KYOCERA CORPORATION
- Kentaro MURAKAWA
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR TRANSISTOR STRUCTURE WITH REDUCED CONTACT RESISTANCE...
- Publication number 20220367694
- Publication date Nov 17, 2022
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR ELEMENT STRUCTURE
- Publication number 20210384312
- Publication date Dec 9, 2021
- Mitsubishi Electric Corporation
- Kohei MIKI
- H01 - BASIC ELECTRIC ELEMENTS
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GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20210327710
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Chiaki SASAOKA
- H01 - BASIC ELECTRIC ELEMENTS
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FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS
- Publication number 20210249527
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS
- Publication number 20210083082
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
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HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...
- Publication number 20210050209
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
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MICROELECTRONIC SENSOR WITH AN AHARONOV-BOHM ANTENNA
- Publication number 20200303534
- Publication date Sep 24, 2020
- EPITRONIC HOLDINGS PTE LTD.
- Ayal RAM
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
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MONOLITHIC INTEGRATION OF GAN HEMT AND SI CMOS
- Publication number 20200135766
- Publication date Apr 30, 2020
- QUALCOMM Incorporated
- Ranadeep Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE LIGHT EMITTING SWITCH DEVICES AND METHODS THEREOF
- Publication number 20200066786
- Publication date Feb 27, 2020
- ROCHESTER INSTITUTE OF TECHNOLOGY
- Matthew Hartensveld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN...
- Publication number 20180155338
- Publication date Jun 7, 2018
- FUJIFILM CORPORATION
- Hiroaki TSUYAMA
- C07 - ORGANIC CHEMISTRY
Information Patent Application
CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170358651
- Publication date Dec 14, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING III-V NANOWIRE QUANTUM WELL TRANSISTOR
- Publication number 20170110540
- Publication date Apr 20, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLI...
- Publication number 20160322509
- Publication date Nov 3, 2016
- Applied Materials, Inc.
- Kaushal K. SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Temperature Ohmic Contacts for III-N Power Devices
- Publication number 20140346568
- Publication date Nov 27, 2014
- IMEC
- Brice De Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140159049
- Publication date Jun 12, 2014
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Sang Choon KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED III-V FIELD EFFECT TRANSISTOR (FET), INTEGRATED CIRCUI...
- Publication number 20120248501
- Publication date Oct 4, 2012
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED III-V FIELD EFFECT TRANSISTOR (FET) AND INTEGRATED CIR...
- Publication number 20120248535
- Publication date Oct 4, 2012
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

on thin film AIII-BV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Forming semiconductor structures with two-dimensional materials

Semiconductor element comprising a MIM capacitor and a via hole, a...

Gallium nitride semiconductor device and method for manufacturing t...

Semiconductor transistor structure with reduced contact resistance...

Thin film transistor and display substrate having the same

Ohmic contact for multiple channel FET

Forming semiconductor structures with two-dimensional materials

High electron mobility transistor (HEMT) having an indium-containin...

Ohmic contacts and methods for manufacturing the same

Nanowire light emitting switch devices and methods thereof

Forming semiconductor structures with two-dimensional materials

High electron mobility transistor (HEMT) having an indium-containin...

Organic thin film transistor, method of manufacturing organic thin...

Capacitively-coupled field-plate structures for semiconductor devices

Gallium arsenide based materials used in thin film transistor appli...

Semiconductor device and method of manufacturing the same, and powe...

Method for making III-V nanowire quantum well transistor

Low temperature ohmic contacts for III-N power devices

Semiconductor device and method of manufacturing the same

Self-aligned III-V field effect transistor (FET) and integrated cir...

Self-aligned III-V field effect transistor (FET), integrated circui...

Patents Applicationslast 30 patents

FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

STRUCTURE WITH PHOTODIODE, HIGH ELECTRON MOBILITY TRANSISTOR, SURFA...

FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...

SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR EL...

SEMICONDUCTOR TRANSISTOR STRUCTURE WITH REDUCED CONTACT RESISTANCE...

SEMICONDUCTOR ELEMENT STRUCTURE

GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS

FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...

MICROELECTRONIC SENSOR WITH AN AHARONOV-BOHM ANTENNA

MONOLITHIC INTEGRATION OF GAN HEMT AND SI CMOS

NANOWIRE LIGHT EMITTING SWITCH DEVICES AND METHODS THEREOF

ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN...

CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

METHOD FOR MAKING III-V NANOWIRE QUANTUM WELL TRANSISTOR

GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLI...

Low Temperature Ohmic Contacts for III-N Power Devices

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SELF-ALIGNED III-V FIELD EFFECT TRANSISTOR (FET), INTEGRATED CIRCUI...

SELF-ALIGNED III-V FIELD EFFECT TRANSISTOR (FET) AND INTEGRATED CIR...