Other compounds of groups 13-15

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H01L45/148

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/148Other compounds of groups 13-15

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 11,542,600
- Issue date Jan 3, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Material implication operations in memory
- Patent number 11,475,951
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory and method of fabricating the same
- Patent number 11,476,417
- Issue date Oct 18, 2022
- Jiangsu Advanced Memory Technology Co., Ltd.
- Sheng-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon-based volatile and non-volatile memristors
- Patent number 11,393,976
- Issue date Jul 19, 2022
- Massachusetts Institute of Technology
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory selector and memory device including same
- Patent number 11,374,058
- Issue date Jun 28, 2022
- Imec VZW
- Shairfe Muhammad Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells having increased structural stability
- Patent number 11,367,833
- Issue date Jun 21, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,355,705
- Issue date Jun 7, 2022
- Kioxia Corporation
- Kotaro Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold switching selector based memory
- Patent number 11,348,973
- Issue date May 31, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing OTS device, and OTS device
- Patent number 11,335,853
- Issue date May 17, 2022
- ULVAC, Inc.
- Hyung-Woo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance random access memory device and fabricating method of th...
- Patent number 11,283,019
- Issue date Mar 22, 2022
- Research & Business Foundation Sungkyunkwan University
- Hyun Suk Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Additively manufactured resistive switch
- Patent number 11,283,020
- Issue date Mar 22, 2022
- UNM Rainforest Innovations
- Lok-kun Tsui
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory structure and the same
- Patent number 11,276,818
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Projected memory device with carbon-based projection component
- Patent number 11,251,370
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change random access memory device
- Patent number 11,233,197
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device
- Patent number 11,217,598
- Issue date Jan 4, 2022
- SK Hynix Inc.
- Bo Yun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming enhancement in self-selecting memory
- Patent number 11,200,950
- Issue date Dec 14, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
C—As—Se—Ge ovonic materials for selector devices and memory devices...
- Patent number 11,158,787
- Issue date Oct 26, 2021
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selection device and storage apparatus
- Patent number 11,152,428
- Issue date Oct 19, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Minoru Ikarashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PCRAM structure with selector device
- Patent number 11,152,569
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,145,810
- Issue date Oct 12, 2021
- TOSHIBA MEMORY CORPORATION
- Hiroki Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog nonvolatile memory cells using dopant activation
- Patent number 11,145,380
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change memory structure and manufacturing method for the same
- Patent number 11,127,790
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Ti-based amorphous alloy and phase change memory device applying th...
- Patent number 11,114,616
- Issue date Sep 7, 2021
- Samsung Electronics Co., Ltd.
- Eunsung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Materials and components in phase change memory devices
- Patent number 11,107,985
- Issue date Aug 31, 2021
- Intel Corporation
- Valter Soncini
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element
- Patent number 11,101,430
- Issue date Aug 24, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriele Navarro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile resistive memory device and manufacturing method thereof
- Patent number 11,101,321
- Issue date Aug 24, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Writam Banerjee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT
- Publication number 20230180638
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Devendra K. Sadana
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CROSSBAR MEMORY ARRAY IN FRONT END OF LINE
- Publication number 20230180642
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Devendra K. Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSBAR MEMORY ARRAY IN BACK END OF LINE
- Publication number 20230180637
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Devendra K. Sadana
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20230093384
- Publication date Mar 23, 2023
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...
- Publication number 20230030949
- Publication date Feb 2, 2023
- Korea Advanced Institute of Science and Technology
- Heejun YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220263024
- Publication date Aug 18, 2022
- KIOXIA Corporation
- Kotaro NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY
- Publication number 20220263019
- Publication date Aug 18, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF
- Publication number 20220254996
- Publication date Aug 11, 2022
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY STRUCTURE AND THE SAME
- Publication number 20220199901
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- JAU-YI WU
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING ENHANCEMENT IN SELF-SELECTING MEMORY
- Publication number 20220172779
- Publication date Jun 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220140235
- Publication date May 5, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Hsu YEN
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC SYNAPTIC DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220093854
- Publication date Mar 24, 2022
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT
- Publication number 20220093853
- Publication date Mar 24, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20220085040
- Publication date Mar 17, 2022
- SK HYNIX INC.
- Bo Yun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT
- Publication number 20220052256
- Publication date Feb 17, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL VARIABLE RESISTANCE MEMORY DEVICES
- Publication number 20220029095
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Hyuncheol KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220013717
- Publication date Jan 13, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- GEORGIOS VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL FOR RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20210384419
- Publication date Dec 9, 2021
- Intel Corporation
- ABHISHEK A. SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE THERMAL STORAGE CERAMIC AND PREPARATION METHOD THEREOF
- Publication number 20210384426
- Publication date Dec 9, 2021
- Wuhan University of Science and Technology
- Meijie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION
- Publication number 20210343358
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20210343937
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING OTS DEVICE, AND OTS DEVICE
- Publication number 20210336137
- Publication date Oct 28, 2021
- ULVAC, Inc.
- Hyung-Woo AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20210320147
- Publication date Oct 14, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- JAU-YI WU
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD SWITCHING SELECTOR BASED MEMORY
- Publication number 20210288108
- Publication date Sep 16, 2021
- Intel Corporation
- ABHISHEK A. SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20210288248
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HSING-LIEN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-Based Volatile and Non-Volatile Memristors
- Publication number 20210217952
- Publication date Jul 15, 2021
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
- Publication number 20210193916
- Publication date Jun 24, 2021
- Micron Technology, Inc.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES US...
- Publication number 20210184112
- Publication date Jun 17, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20210164101
- Publication date Jun 3, 2021
- ASM IP HOLDING B.V.
- Viljami Pore
- H01 - BASIC ELECTRIC ELEMENTS

Other compounds of groups 13-15

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic synaptic device and method for manufacturing same

Resistive random-access memory cell and manufacturing method thereof

Semiconductor material for resistive random access memory

Integrated circuit structure

Synthesis and use of precursors for ALD of group VA element contain...

Material implication operations in memory

Phase change memory and method of fabricating the same

Carbon-based volatile and non-volatile memristors

Memory selector and memory device including same

Memory cells having increased structural stability

Semiconductor memory device and method for manufacturing same

Threshold switching selector based memory

Method of manufacturing OTS device, and OTS device

Resistance random access memory device and fabricating method of th...

Additively manufactured resistive switch

Phase change memory structure and the same

Projected memory device with carbon-based projection component

Phase change random access memory device

Nonvolatile memory device

Programming enhancement in self-selecting memory

C—As—Se—Ge ovonic materials for selector devices and memory devices...

Selection device and storage apparatus

PCRAM structure with selector device

Memory device

Analog nonvolatile memory cells using dopant activation

Phase change memory structure and manufacturing method for the same

Ti-based amorphous alloy and phase change memory device applying th...

Materials and components in phase change memory devices

Storage element

Nonvolatile resistive memory device and manufacturing method thereof

Patents Applicationslast 30 patents

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT

CROSSBAR MEMORY ARRAY IN FRONT END OF LINE

CROSSBAR MEMORY ARRAY IN BACK END OF LINE

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY

RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF

PHASE CHANGE MEMORY STRUCTURE AND THE SAME

PROGRAMMING ENHANCEMENT IN SELF-SELECTING MEMORY

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

ELECTRONIC SYNAPTIC DEVICE AND METHOD FOR MANUFACTURING SAME

PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT

NONVOLATILE MEMORY DEVICE

PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT

VERTICAL VARIABLE RESISTANCE MEMORY DEVICES

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR MATERIAL FOR RESISTIVE RANDOM ACCESS MEMORY

PHASE CHANGE THERMAL STORAGE CERAMIC AND PREPARATION METHOD THEREOF

ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION

INTEGRATED CIRCUIT STRUCTURE

METHOD OF MANUFACTURING OTS DEVICE, AND OTS DEVICE

PHASE CHANGE MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

THRESHOLD SWITCHING SELECTOR BASED MEMORY

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Carbon-Based Volatile and Non-Volatile Memristors

PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE

CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES US...

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...