Oxygen testing

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CPC
Y10S117/916

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

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Y10S117/916Oxygen testing

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Patents Grantslast 30 patents

Information Patent Grant
Silicon seed crystal and method for producing silicon single crystal
- Patent number 6,670,036
- Issue date Dec 30, 2003
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing nitrogen-doped semiconductor wafers
- Patent number 6,350,314
- Issue date Feb 26, 2002
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon semiconductor wafers with low defect...
- Patent number 5,935,320
- Issue date Aug 10, 1999
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Dieter Graef
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen precipitation control in Czochralski-grown silicon crystals
- Patent number 5,795,382
- Issue date Aug 18, 1998
- Texas Instruments Incorporated
- Weldon J. Bell
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for oxygen precipitation control in silicon crystals
- Patent number 5,607,507
- Issue date Mar 4, 1997
- Texas Instruments Incorporated
- Weldon J. Bell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen precipitation control in czochralski-grown silicon cyrstals
- Patent number 5,474,020
- Issue date Dec 12, 1995
- Texas Instruments Incorporated
- Weldon J. Bell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer with defined interstitial oxygen concentration
- Patent number 5,096,839
- Issue date Mar 17, 1992
- Kabushiki Kaisha Toshiba
- Tsutomu Amai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon crystal oxygen evaluation method using fourier transform in...
- Patent number 5,066,599
- Issue date Nov 19, 1991
- Fujitsu Limited
- Hiroshi Kaneta
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing thin compound oxide film and apparatus for...
- Patent number 5,016,563
- Issue date May 21, 1991
- Nippon Telegraph & Telephone Corporation
- Toshiaki Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing thin compound oxide film and apparatus for...
- Patent number 4,888,202
- Issue date Dec 19, 1989
- Nippon Telegraph & Telephone Corporation
- Toshiaki Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling oxygen content and distribution in grown sili...
- Patent number 4,511,428
- Issue date Apr 16, 1985
- International Business Machines Corporation
- Hitendra Ghosh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling the oxygen level of silicon rods pulled acco...
- Patent number 4,417,943
- Issue date Nov 29, 1983
- International Business Machines Corporation
- Combronde Jacques
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of oxygen- and carbon-related crystal defects in silicon pr...
- Patent number 4,400,232
- Issue date Aug 23, 1983
- Eagle-Picher industries, Inc.
- Paul D. Ownby
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling impurities in liquid phase epitaxial growth
- Patent number 4,371,420
- Issue date Feb 1, 1983
- The United States of America as represented by the Secretary of the Navy
- David A. Stevenson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Real-time analysis and control of melt-chemistry in crystal growing...
- Patent number 4,134,785
- Issue date Jan 16, 1979
- Western Electric Company, Inc.
- Robert J. Lavigna
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of oxygen in silicon crystals
- Patent number 4,040,895
- Issue date Aug 9, 1977
- International Business Machines Corporation
- William John Patrick
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Silicon seed crystal and method for producing silicon single crystal
- Publication number 20040083945
- Publication date May 6, 2004
- SHIN-ETSU HANDOTAI CO., LTD.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SEED CRYSTAL AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20020098358
- Publication date Jul 25, 2002
- EIICHI IINO
- C30 - CRYSTAL GROWTH

Oxygen testing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon seed crystal and method for producing silicon single crystal

Process for producing nitrogen-doped semiconductor wafers

Process for producing silicon semiconductor wafers with low defect...

Oxygen precipitation control in Czochralski-grown silicon crystals

System for oxygen precipitation control in silicon crystals

Oxygen precipitation control in czochralski-grown silicon cyrstals

Silicon wafer with defined interstitial oxygen concentration

Silicon crystal oxygen evaluation method using fourier transform in...

Method of manufacturing thin compound oxide film and apparatus for...

Method of manufacturing thin compound oxide film and apparatus for...

Method of controlling oxygen content and distribution in grown sili...

Method for controlling the oxygen level of silicon rods pulled acco...

Control of oxygen- and carbon-related crystal defects in silicon pr...

Method for controlling impurities in liquid phase epitaxial growth

Real-time analysis and control of melt-chemistry in crystal growing...

Control of oxygen in silicon crystals

Patents Applicationslast 30 patents

Silicon seed crystal and method for producing silicon single crystal

SILICON SEED CRYSTAL AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL