passivating silicon carbide surfaces

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H01L21/045

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/045passivating silicon carbide surfaces

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of an element of an electronic device having i...
- Patent number 12,266,530
- Issue date Apr 1, 2025
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,266,852
- Issue date Apr 1, 2025
- Innolux Corporation
- Chia-Ping Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide region containing ox...
- Patent number 12,191,356
- Issue date Jan 7, 2025
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method for fabricating silicon carbide semiconductor device and pow...
- Patent number 12,131,906
- Issue date Oct 29, 2024
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device with improved robustness and correspon...
- Patent number 12,125,762
- Issue date Oct 22, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,119,392
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser radiation system
- Patent number 12,072,507
- Issue date Aug 27, 2024
- Gigaphoton Inc.
- Osamu Wakabayashi
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 12,027,591
- Issue date Jul 2, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,901,618
- Issue date Feb 13, 2024
- Innolux Corporation
- Chia-Ping Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of an element of an electronic device having i...
- Patent number 11,869,771
- Issue date Jan 9, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 11,848,211
- Issue date Dec 19, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device and method
- Patent number 11,817,492
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thermally processing a substrate and associated system
- Patent number 11,664,246
- Issue date May 30, 2023
- LASER SYSTEMS & SOLUTIONS OF EUROPE
- Fulvio Mazzamuto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 11,621,167
- Issue date Apr 4, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method for making a bipolar junction transistor having an integrate...
- Patent number 11,621,200
- Issue date Apr 4, 2023
- Diodes Incorporated
- Peter Hugh Blair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device with improved robustness and correspon...
- Patent number 11,495,508
- Issue date Nov 8, 2022
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and antenna device
- Patent number 11,469,491
- Issue date Oct 11, 2022
- Innolux Corporation
- Chia-Ping Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,424,325
- Issue date Aug 23, 2022
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 11,417,759
- Issue date Aug 16, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation structure for semiconductor devices
- Patent number RE49167
- Issue date Aug 9, 2022
- Wolfspeed, Inc.
- Van Mieczkowski
Information Patent Grant
Semiconductor device including junction material in a trench and ma...
- Patent number 11,322,596
- Issue date May 3, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, inverter circuit, driving device, vehicle, an...
- Patent number 11,276,758
- Issue date Mar 15, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 11,239,079
- Issue date Feb 1, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device and method
- Patent number 11,222,963
- Issue date Jan 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for passivating silicon carbide epitaxial layer
- Patent number 11,183,385
- Issue date Nov 23, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
- Jia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,139,369
- Issue date Oct 5, 2021
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 11,107,893
- Issue date Aug 31, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide body and method of m...
- Patent number 11,063,142
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing a...
- Patent number 10,930,741
- Issue date Feb 23, 2021
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH A SILICON CARBIDE PORTION AND A GLASS STR...
- Publication number 20250096149
- Publication date Mar 20, 2025
- INFINEON TECHNOLOGIES AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Opaque Thermal Layer for Silicon Carbide Substrates
- Publication number 20250079186
- Publication date Mar 6, 2025
- Yi ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...
- Publication number 20250038060
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240371945
- Publication date Nov 7, 2024
- GLOBALWAFERS CO., LTD.
- Ying-Ru Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240313083
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...
- Publication number 20240290616
- Publication date Aug 29, 2024
- DENSO CORPORATION
- Tomohiro MIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING...
- Publication number 20240203737
- Publication date Jun 20, 2024
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240170342
- Publication date May 23, 2024
- SK HYNIX INC.
- Jeong Hwan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240162602
- Publication date May 16, 2024
- InnoLux Corporation
- Chia-Ping TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...
- Publication number 20240145537
- Publication date May 2, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240145613
- Publication date May 2, 2024
- Taiwan-Asia Semiconductor Corporation
- Di-Bao WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA
- Publication number 20240105832
- Publication date Mar 28, 2024
- INFINEON TECHNOLOGIES AG
- Thomas Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20240087897
- Publication date Mar 14, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SiC MOSFET
- Publication number 20240071764
- Publication date Feb 29, 2024
- KYOTO UNIVERSITY
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY GROWN FIELD OXIDE LAYER IN ED...
- Publication number 20230420577
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- In-Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230387267
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230223276
- Publication date Jul 13, 2023
- MEDIATEK INC.
- Po-Chao TSAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20230207321
- Publication date Jun 29, 2023
- KABUSHIKI KAISHA TOSHIBA
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Application
LOW-TEMPERATURE PROCESSING METHOD FOR IMPROVING 4H-SIC/SIO2 INTERFA...
- Publication number 20230197452
- Publication date Jun 22, 2023
- XI'AN JIAOTONG UNIVERSITY
- Weihua LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN ANCHORING ELEMENT OF A SIC-BASED ELECTRO...
- Publication number 20230170271
- Publication date Jun 1, 2023
- STMicroelectronics S.r.l.
- Valeria PUGLISI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230164973
- Publication date May 25, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yutong SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...
- Publication number 20230092543
- Publication date Mar 23, 2023
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE AND POW...
- Publication number 20230036221
- Publication date Feb 2, 2023
- Mitsubishi Electric Corporation
- Shiro HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20230006342
- Publication date Jan 5, 2023
- InnoLux Corporation
- Chia-Ping TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20220130673
- Publication date Apr 28, 2022
- KABUSHIKI KAISHA TOSHIBA
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Application
Semiconductor Device and Method
- Publication number 20220109060
- Publication date Apr 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing or Modifying Silicon Carbide-Containing Articles
- Publication number 20220097256
- Publication date Mar 31, 2022
- PSC Technologies GmbH
- Siegmund GREULICH-WEBER
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING I...
- Publication number 20220076955
- Publication date Mar 10, 2022
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS

passivating silicon carbide surfaces

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method of an element of an electronic device having i...

Electronic device

Semiconductor device including silicon carbide region containing ox...

Method for fabricating silicon carbide semiconductor device and pow...

Silicon carbide power device with improved robustness and correspon...

Semiconductor device and method

Laser radiation system

Method for forming a semiconductor device and a semiconductor device

Electronic device

Method of forming a semiconductor device

Manufacturing method of an element of an electronic device having i...

Semiconductor device, method for manufacturing semiconductor device...

Semiconductor device and method

Method for thermally processing a substrate and associated system

Semiconductor device, method for manufacturing semiconductor device...

Method for making a bipolar junction transistor having an integrate...

Silicon carbide power device with improved robustness and correspon...

Electronic device and antenna device

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor device and method for reduced bias threshold instability

Passivation structure for semiconductor devices

Semiconductor device including junction material in a trench and ma...

Semiconductor device, inverter circuit, driving device, vehicle, an...

Semiconductor device, method for manufacturing semiconductor device...

Semiconductor device and method

Method for passivating silicon carbide epitaxial layer

Method of forming a semiconductor device

Method for forming a semiconductor device and a semiconductor device

Semiconductor device including silicon carbide body and method of m...

Silicon carbide semiconductor device and method of manufacturing a...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH A SILICON CARBIDE PORTION AND A GLASS STR...

Opaque Thermal Layer for Silicon Carbide Substrates

SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...

SEMICONDUCTOR DEVICE AND METHOD

SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING...

TRANSISTOR AND METHOD FOR FABRICATING THE SAME

ELECTRONIC DEVICE

SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...

SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME

FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

SiC SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SiC MOSFET

SEMICONDUCTOR DEVICE WITH SELECTIVELY GROWN FIELD OXIDE LAYER IN ED...

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

LOW-TEMPERATURE PROCESSING METHOD FOR IMPROVING 4H-SIC/SIO2 INTERFA...

METHOD OF MANUFACTURING AN ANCHORING ELEMENT OF A SIC-BASED ELECTRO...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...

METHOD FOR FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE AND POW...

ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

Semiconductor Device and Method

Method for Producing or Modifying Silicon Carbide-Containing Articles

MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING I...