Peripheral circuit region

Industry

CPC
H01L27/11592

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11592Peripheral circuit region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device, semiconductor device and manufacturing method of the...
- Patent number 11,678,492
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,631,698
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell array, semiconductor device including the same, and man...
- Patent number 11,569,165
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- TsuChing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising ferroelectric transistors and non-...
- Patent number 11,515,331
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit and write method
- Patent number 11,508,427
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Sheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,482,267
- Issue date Oct 25, 2022
- Samsung Electronics Co., Ltd.
- Minhee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device using a multilayer ferroelectric stack and method of...
- Patent number 11,469,251
- Issue date Oct 11, 2022
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell circuit, memory cell arrangement, and methods thereof
- Patent number 11,437,402
- Issue date Sep 6, 2022
- FERROELECTRIC MEMORY GMBH
- Marko Noack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded ferroelectric memory cell
- Patent number 11,437,084
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 11,430,500
- Issue date Aug 30, 2022
- Kioxia Corporation
- Haruka Sakuma
- G11 - INFORMATION STORAGE
Information Patent Grant
3D ferroelectric memory
- Patent number 11,411,025
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including memory cells and method for manufact...
- Patent number 11,380,369
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with a logic device and a memory device bei...
- Patent number 11,362,108
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, memory cell arrangement, and methods thereof
- Patent number 11,289,145
- Issue date Mar 29, 2022
- FERROELECTRIC MEMORY GMBH
- Johannes Ocker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric FET-based content addressable memory
- Patent number 11,232,838
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Lien Linus Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices based on ferroelectric field effect transistors
- Patent number 11,211,404
- Issue date Dec 28, 2021
- Imec VZW
- Shairfe Muhammad Salahuddin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 11,201,171
- Issue date Dec 14, 2021
- Kioxia Corporation
- Sumiko Domae
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated transistors having gate material passing through a pilla...
- Patent number 11,177,389
- Issue date Nov 16, 2021
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer semiconductor element, semiconductor device, and electr...
- Patent number 11,171,155
- Issue date Nov 9, 2021
- Sony Corporation
- Masanori Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a MFMIS memory device
- Patent number 11,171,157
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having ferroelectric transistors with heteros...
- Patent number 11,164,889
- Issue date Nov 2, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a negative capacitance using ferroelect...
- Patent number 11,063,065
- Issue date Jul 13, 2021
- Samsung Electronics Co., Ltd.
- Guk Il An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,062,751
- Issue date Jul 13, 2021
- Samsung Electronics Co., Ltd.
- Minhee Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory field-effect transistors and methods of manufacturing the same
- Patent number 11,004,868
- Issue date May 11, 2021
- Intel Corporation
- Seiyon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,004,975
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chi Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having ferroelectric transistors with heteros...
- Patent number 10,998,338
- Issue date May 4, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuitry
- Patent number 10,998,027
- Issue date May 4, 2021
- Micron Technology, Inc.
- Scott J. Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods used in forming an array of memory cells
- Patent number 10,978,484
- Issue date Apr 13, 2021
- Micron Technology, Inc.
- Werner Juengling
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical-channel ferroelectric flash memory
- Patent number 10,978,485
- Issue date Apr 13, 2021
- Macronix International Co., Ltd.
- Hang-Ting Lue
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240164112
- Publication date May 16, 2024
- RENESAS ELECTRONICS CORPORATION
- Ryo OGURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRI...
- Publication number 20240008282
- Publication date Jan 4, 2024
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413573
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE
- Publication number 20230301052
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END ACTIVE DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP
- Publication number 20230269948
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE INCLUDING THREE-DIMENSIONAL NOR MEMORY STRINGS OF...
- Publication number 20230262988
- Publication date Aug 17, 2023
- Sunrise Memory Corporation
- Eli Harari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS OF TESTING MEMORY DEVICES
- Publication number 20230154806
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS AND METHODS FOR FORMING THE SAME
- Publication number 20230138939
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gao-Ming WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
- Publication number 20230120530
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- TsuChing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...
- Publication number 20230081427
- Publication date Mar 16, 2023
- Sunrise Memory Corporation
- Wu-Yi Henry Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...
- Publication number 20230078883
- Publication date Mar 16, 2023
- Sunrise Memory Corporation
- Wu-Yi Henry Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CIRCUIT AND WRITE METHOD
- Publication number 20230083548
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Sheng WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230083989
- Publication date Mar 16, 2023
- RENESAS ELECTRONICS CORPORATION
- Tatsuyoshi MIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230063934
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SYNAPSE DEVICE STACK, 3D STACKABLE SYNAPSE ARRAY USING THE 3D SY...
- Publication number 20230059685
- Publication date Feb 23, 2023
- Seoul National University R&DB Foundation
- Jong-Ho LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D SYNAPSE DEVICE STACK, 3D STACKABLE SYNAPSE ARRAY USING THE 3D SY...
- Publication number 20230053693
- Publication date Feb 23, 2023
- Seoul National University R&DB Foundation
- Jong-Ho LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230045420
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTE-IN-MEMORY DEVICE AND METHOD
- Publication number 20230022115
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20230021071
- Publication date Jan 19, 2023
- Samsung Electronics Co., Ltd.
- Minhee CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230011675
- Publication date Jan 12, 2023
- Samsung Electronics Co., Ltd.
- Kyunghwan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE USING A MULTILAYER FERROELECTRIC STACK AND METHOD OF...
- Publication number 20220415924
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20220406797
- Publication date Dec 22, 2022
- Samsung Electronics Co., Ltd.
- HYUNCHEOL KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220384458
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY
- Publication number 20220359569
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenchen Jacob WANG
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED FERROELECTRIC MEMORY CELL
- Publication number 20220351769
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220336476
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...
- Publication number 20220335983
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D FERROELECTRIC MEMORY
- Publication number 20220336498
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220310654
- Publication date Sep 29, 2022
- Samsung Electronics Co., Ltd.
- Do Young CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...
- Publication number 20220302171
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- BO-FENG YOUNG
- H01 - BASIC ELECTRIC ELEMENTS

Peripheral circuit region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device, semiconductor device and manufacturing method of the...

Ferroelectric device film stacks with texturing layer, and method o...

Three-dimensional memory device with ferroelectric material

Memory cell array, semiconductor device including the same, and man...

Integrated assemblies comprising ferroelectric transistors and non-...

Memory circuit and write method

Memory device

Memory device using a multilayer ferroelectric stack and method of...

Memory cell circuit, memory cell arrangement, and methods thereof

Embedded ferroelectric memory cell

Semiconductor storage device

3D ferroelectric memory

Semiconductor device including memory cells and method for manufact...

Semiconductor structure with a logic device and a memory device bei...

Memory cell, memory cell arrangement, and methods thereof

Ferroelectric FET-based content addressable memory

Memory devices based on ferroelectric field effect transistors

Semiconductor storage device

Integrated transistors having gate material passing through a pilla...

Multi-layer semiconductor element, semiconductor device, and electr...

Method for forming a MFMIS memory device

Integrated assemblies having ferroelectric transistors with heteros...

Semiconductor device having a negative capacitance using ferroelect...

Memory device

Memory field-effect transistors and methods of manufacturing the same

Semiconductor device and manufacturing method thereof

Integrated assemblies having ferroelectric transistors with heteros...

Memory circuitry

Methods used in forming an array of memory cells

Vertical-channel ferroelectric flash memory

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRI...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE

BACK-END ACTIVE DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP

MEMORY STRUCTURE INCLUDING THREE-DIMENSIONAL NOR MEMORY STRINGS OF...

SYSTEMS AND METHODS OF TESTING MEMORY DEVICES

VERTICAL FIELD EFFECT TRANSISTORS AND METHODS FOR FORMING THE SAME

MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...

THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...

MEMORY CIRCUIT AND WRITE METHOD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Device and Method of Manufacture

3D SYNAPSE DEVICE STACK, 3D STACKABLE SYNAPSE ARRAY USING THE 3D SY...

3D SYNAPSE DEVICE STACK, 3D STACKABLE SYNAPSE ARRAY USING THE 3D SY...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

COMPUTE-IN-MEMORY DEVICE AND METHOD

MEMORY DEVICE

SEMICONDUCTOR DEVICE

MEMORY DEVICE USING A MULTILAYER FERROELECTRIC STACK AND METHOD OF...

SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

THREE-DIMENSIONAL MEMORY

EMBEDDED FERROELECTRIC MEMORY CELL

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...

3D FERROELECTRIC MEMORY

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...