Permeable base transistors [PBT]

Industry

CPC
H01L29/66424

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66424Permeable base transistors [PBT]

Industries

Patents Grantslast 30 patents

Information Patent Grant
Devices formable by low temperature direct bonding
- Patent number 6,274,892
- Issue date Aug 14, 2001
- Intersil Americas Inc.
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making semiconductor devices by low temperature direct...
- Patent number 6,194,290
- Issue date Feb 27, 2001
- Intersil Corporation
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced methods for making semiconductor devices by low temperatur...
- Patent number 6,153,495
- Issue date Nov 28, 2000
- Intersil Corporation
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure with a silicide layer and process for producing s...
- Patent number 5,958,505
- Issue date Sep 28, 1999
- Forschungszentrum Julich GmbH
- Siegfried Mantl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation method having improved material purity
- Patent number 5,354,697
- Issue date Oct 11, 1994
- U.S. Philips Corporation
- Doeke J. Oostra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor embedded layer technology including permeable base tr...
- Patent number 5,298,787
- Issue date Mar 29, 1994
- Massachusetts Institute of Technology
- Carl O. Bozler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making dielectrically isolated metal base transistors and...
- Patent number 5,290,715
- Issue date Mar 1, 1994
- U.S. Philips Corporation
- Ranjana Pandya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable base transistor having selectively grown emitter
- Patent number 5,274,266
- Issue date Dec 28, 1993
- Siemens Aktiengesellschaft
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a semiconduct...
- Patent number 5,236,872
- Issue date Aug 17, 1993
- U.S. Philips Corp.
- Alfred H. van Ommen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including a static i...
- Patent number 5,089,431
- Issue date Feb 18, 1992
- U.S. Philips Corporation
- John A. G. Slatter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor embedded layer technology utilizing selective epitaxi...
- Patent number 5,032,538
- Issue date Jul 16, 1991
- Massachusetts Institute of Technology
- Carl O. Bozler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a perforated metal silicide layer
- Patent number 4,901,121
- Issue date Feb 13, 1990
- American Telephone & Telegraph Co., AT&T Bell Labs
- John M. Gibson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doping multilayer structure
- Patent number 4,785,340
- Issue date Nov 15, 1988
- Director-General of the Agency of Industrial Science and Technology
- Kiyokazu Nakagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating submicron silicon structures such as permeabl...
- Patent number 4,510,016
- Issue date Apr 9, 1985
- GTE Laboratories
- Jim-Yong Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor embedded layer technology including permeable base tr...
- Patent number 4,378,629
- Issue date Apr 5, 1983
- Massachusetts Institute of Technology
- Carl O. Bozler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having unsaturated characteristics
- Patent number 4,106,044
- Issue date Aug 8, 1978
- Nippon Gakki Seizo Kabushiki Kaisha
- Takashi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Permeable base transistors [PBT]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Devices formable by low temperature direct bonding

Methods for making semiconductor devices by low temperature direct...

Advanced methods for making semiconductor devices by low temperatur...

Layered structure with a silicide layer and process for producing s...

Implantation method having improved material purity

Semiconductor embedded layer technology including permeable base tr...

Method of making dielectrically isolated metal base transistors and...

Permeable base transistor having selectively grown emitter

Method of manufacturing a semiconductor device having a semiconduct...

Method of manufacturing a semiconductor device including a static i...

Semiconductor embedded layer technology utilizing selective epitaxi...

Semiconductor device comprising a perforated metal silicide layer

Semiconductor device having doping multilayer structure

Method of fabricating submicron silicon structures such as permeabl...

Semiconductor embedded layer technology including permeable base tr...

Field effect transistor having unsaturated characteristics