Phosphides of gallium or indium

Industry

CPC
Y10S148/119

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/119Phosphides of gallium or indium

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a light emitting diode
- Patent number 5,707,891
- Issue date Jan 13, 1998
- Sharp Kabushiki Kaisha
- Tadasu Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a uniform oxide layer on a compound semicondu...
- Patent number 5,214,003
- Issue date May 25, 1993
- Nippon Mining Co., Ltd
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor laser
- Patent number 5,093,278
- Issue date Mar 3, 1992
- Sumitomo Electric Industries, Ltd.
- Hidenori Kamei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a distributed brass reflector type semicond...
- Patent number 5,045,499
- Issue date Sep 3, 1991
- Research Development Corporation of Japan
- Hideaki Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating self-stabilized semiconductor gratings
- Patent number 5,023,198
- Issue date Jun 11, 1991
- AT&T Bell Laboratories
- Keith E. Strege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a field effect transistor integrated with an opto...
- Patent number 5,021,361
- Issue date Jun 4, 1991
- Kabushiki Kaisha Toshiba
- Jun'ichi Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling dopant incorporation in high resistivity In-b...
- Patent number 4,999,315
- Issue date Mar 12, 1991
- AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an opto-electronic integrated circuit
- Patent number 4,996,163
- Issue date Feb 26, 1991
- Sumitomo Electric Industries, Ltd.
- Goro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of semiconductor devices
- Patent number 4,981,814
- Issue date Jan 1, 1991
- British Telecommunications public limited company
- Andrew Nelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an epitaxial indium phosphide layer on a su...
- Patent number 4,965,222
- Issue date Oct 23, 1990
- U.S. Philips Corporation
- Aemilianus G. J. Staring
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,952,446
- Issue date Aug 28, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,946,735
- Issue date Aug 7, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material for light emitting element and method for crystal growth t...
- Patent number 4,944,811
- Issue date Jul 31, 1990
- Tokuzo Sukegawa
- Tokuzo Sukegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a superlattice heterojunction bipolar device
- Patent number 4,937,204
- Issue date Jun 26, 1990
- Sony Corporation
- Akira Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed bragg reflector type semiconductor laser
- Patent number 4,914,670
- Issue date Apr 3, 1990
- Nishizawa; Hideaki
- Hideaki Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of indium gallium arsenide surfaces
- Patent number 4,843,037
- Issue date Jun 27, 1989
- Bell Communications Research, Inc.
- Eli Yablonovitch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus
- Patent number 4,835,579
- Issue date May 30, 1989
- Sony Corporation
- Akira Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor-phase epitaxy of indium phosphide and other compounds using f...
- Patent number 4,801,557
- Issue date Jan 31, 1989
- Northwestern University
- Bruce W. Wessels
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for selective heteroepitaxial III-V compound growth
- Patent number 4,797,374
- Issue date Jan 10, 1989
- Plessey Overseas Limited
- Michael D. Scott
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a waveguide for a DFB laser using photo-assisted...
- Patent number 4,782,035
- Issue date Nov 1, 1988
- Mitsubishi Denki Kabushiki Kaisha
- Masatoshi Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing heteroepitaxial InP on Si using Sn substrate impl...
- Patent number 4,766,092
- Issue date Aug 23, 1988
- Hitachi, Ltd.
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mass transport of indium phosphide
- Patent number 4,717,443
- Issue date Jan 5, 1988
- Standard Telephones and Cables, Plc
- Peter D. Greene
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Preparation of a surface for deposition of a passinating layer
- Patent number 4,705,760
- Issue date Nov 10, 1987
- RCA Corporation
- Grzegorz Kaganowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantized layered structures with adjusted indirect bandgap transit...
- Patent number 4,675,709
- Issue date Jun 23, 1987
- Xerox Corporation
- Donald R. Scifres
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thermally-activated vapor etchant for InP
- Patent number 4,671,847
- Issue date Jun 9, 1987
- The United States of America as represented by the Secretary of the Navy
- Arthur R. Clawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Generation of ohmic contacts on indium phosphide
- Patent number 4,662,063
- Issue date May 5, 1987
- The United States of America as represented by the Department of the Navy
- David A. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an indium phosphide-boron phosphide heterojunctio...
- Patent number 4,611,388
- Issue date Sep 16, 1986
- Allied Corporation
- Krishna P. Pande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a gallium phosphide electroluminescent de...
- Patent number 4,080,245
- Issue date Mar 21, 1978
- Matsushita Electric Industrial Co., Ltd.
- Haruyoshi Yamanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed FET employing ternary and quarternary III-V active layers
- Patent number 4,075,651
- Issue date Feb 21, 1978
- Varian Associates, Inc.
- Lawrence W. James
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial displays
- Patent number 3,984,857
- Issue date Oct 5, 1976
- Harris Corporation
- Donald R. Mason
- H01 - BASIC ELECTRIC ELEMENTS

Phosphides of gallium or indium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a light emitting diode

Process for producing a uniform oxide layer on a compound semicondu...

Method of manufacturing a semiconductor laser

Method of manufacturing a distributed brass reflector type semicond...

Method for fabricating self-stabilized semiconductor gratings

Method for making a field effect transistor integrated with an opto...

Method of controlling dopant incorporation in high resistivity In-b...

Method for producing an opto-electronic integrated circuit

Preparation of semiconductor devices

Method of manufacturing an epitaxial indium phosphide layer on a su...

Ultra-thin semiconductor membranes

Ultra-thin semiconductor membranes

Material for light emitting element and method for crystal growth t...

Method of making a superlattice heterojunction bipolar device

Distributed bragg reflector type semiconductor laser

Passivation of indium gallium arsenide surfaces

Semiconductor apparatus

Vapor-phase epitaxy of indium phosphide and other compounds using f...

Method for selective heteroepitaxial III-V compound growth

Method of forming a waveguide for a DFB laser using photo-assisted...

Method of growing heteroepitaxial InP on Si using Sn substrate impl...

Mass transport of indium phosphide

Preparation of a surface for deposition of a passinating layer

Quantized layered structures with adjusted indirect bandgap transit...

Thermally-activated vapor etchant for InP

Generation of ohmic contacts on indium phosphide

Method of forming an indium phosphide-boron phosphide heterojunctio...

Process for manufacturing a gallium phosphide electroluminescent de...

High speed FET employing ternary and quarternary III-V active layers

Heteroepitaxial displays