Polycristalline semiconductor regions

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H01L21/763

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/763Polycristalline semiconductor regions

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Implantable all diamond microelectrode and fabrication method
- Patent number 12,237,212
- Issue date Feb 25, 2025
- Board of Trustees of Michigan State University
- Wen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip manufacturing method
- Patent number 12,211,754
- Issue date Jan 28, 2025
- STMicroelectronics S.r.l.
- Pierpaolo Monge Roffarello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 12,205,944
- Issue date Jan 21, 2025
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective polysilicon growth for deep trench polysilicon isolation...
- Patent number 12,148,756
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,161
- Issue date Oct 1, 2024
- Rohm Co., Ltd.
- Kosaku Adachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with field oxide
- Patent number 12,087,813
- Issue date Sep 10, 2024
- Texas Instruments Incorporated
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die with improved thermal insulation between a power...
- Patent number 11,948,927
- Issue date Apr 2, 2024
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,539
- Issue date Mar 26, 2024
- Kabushiki Kaisha Toshiba
- Shotaro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,915,969
- Issue date Feb 27, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Chen-Chiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF substrate structure and method of production
- Patent number 11,848,191
- Issue date Dec 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors and methods of their formation
- Patent number 11,824,096
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor with air gap under raised source/drain region in bulk se...
- Patent number 11,817,479
- Issue date Nov 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC with deep trench polysilicon oxidation
- Patent number 11,756,794
- Issue date Sep 12, 2023
- Texas Instruments Incorporated
- Shariq Arshad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded isolation layer in bulk substrate
- Patent number 11,749,717
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with collector on polycrystalline isol...
- Patent number 11,749,747
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,721,719
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,715,666
- Issue date Aug 1, 2023
- Samsung Electronics Co., Ltd.
- Dong-Hyun Im
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with semiconductor-based isolation str...
- Patent number 11,710,655
- Issue date Jul 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having side-diffused trench plug
- Patent number 11,688,763
- Issue date Jun 27, 2023
- Littelfuse, Inc.
- Ader Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process of a structured substrate
- Patent number 11,646,219
- Issue date May 9, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective polysilicon growth for deep trench polysilicon isolation...
- Patent number 11,594,597
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die with improved thermal insulation between a power...
- Patent number 11,569,211
- Issue date Jan 31, 2023
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,552,175
- Issue date Jan 10, 2023
- Rohm Co., Ltd.
- Nobuyuki Otsubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with body contact regions embedded in poly...
- Patent number 11,545,549
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate device and method for making the same
- Patent number 11,527,633
- Issue date Dec 13, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Longjie Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,527,432
- Issue date Dec 13, 2022
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a deep trench isolation structure a...
- Patent number 11,521,891
- Issue date Dec 6, 2022
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SINGLE-PHOTON AVALANCHE DIODES WITH AN INTEGRATED ACTIVE DEVICE
- Publication number 20250063853
- Publication date Feb 20, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Francesco Gramuglia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION WITH FIELD OXIDE
- Publication number 20240429275
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE STRUCTURE COMPRISING A USEFUL MONOCRYSTALLINE SIC LAYER O...
- Publication number 20240395603
- Publication date Nov 28, 2024
- SOITEC
- Gweltaz Gaudin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CH...
- Publication number 20240387171
- Publication date Nov 21, 2024
- ZING SEMICONDUCTOR CORPORATION
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A SUPPORT SUBSTRATE PROVIDED WITH A CHARGE-TRA...
- Publication number 20240387243
- Publication date Nov 21, 2024
- SOITEC
- Youngpil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...
- Publication number 20240379684
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240297071
- Publication date Sep 5, 2024
- Rohm Co., Ltd.
- Shota IZUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE PHOTODIODE
- Publication number 20240204127
- Publication date Jun 20, 2024
- STMicroelectronics International N.V.
- Antonin ZIMMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CONTROLLED RECTIFIER AND METHOD TO FORM SAME
- Publication number 20240072038
- Publication date Feb 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURES AND METHODS OF MAKING THEREOF
- Publication number 20240014066
- Publication date Jan 11, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- HUNG CHANG LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SILICON DISLOCATION DEFECTS FROM DEEP SI TRENCH INTEGRATION
- Publication number 20230298946
- Publication date Sep 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230299132
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...
- Publication number 20230223463
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH IMPROVED THERMAL INSULATION BETWEEN A POWER...
- Publication number 20230187425
- Publication date Jun 15, 2023
- STMicroelectronics S.r.l.
- Davide Giuseppe PATTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...
- Publication number 20230096544
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230060885
- Publication date Mar 2, 2023
- Rohm Co., Ltd.
- Kosaku ADACHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20230063731
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK
- Publication number 20220392886
- Publication date Dec 8, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP MANUFACTURING METHOD
- Publication number 20220352028
- Publication date Nov 3, 2022
- STMicroelectronics S.r.l
- Pierpaolo MONGE ROFFARELLO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...
- Publication number 20220352308
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220320155
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- SHENG-CHAN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220310837
- Publication date Sep 29, 2022
- Kabushiki Kaisha Toshiba
- Shotaro BABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE
- Publication number 20220262900
- Publication date Aug 18, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DIRECT HYDROPHILIC BONDING OF SUBSTRATES
- Publication number 20220223467
- Publication date Jul 14, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20220208601
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SUBSTRATE STRUCTURE AND METHOD OF PRODUCTION
- Publication number 20220189994
- Publication date Jun 16, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SPREADING ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20220189821
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220165608
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Dong-Hyun IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A USEFUL SUBSTRATE TRAPPING STRUCTURE
- Publication number 20220148908
- Publication date May 12, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS

Polycristalline semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Implantable all diamond microelectrode and fabrication method

Semiconductor chip manufacturing method

Isolation structure for IC with epi regions sharing the same tank

Heterojunction bipolar transistor with buried trap rich isolation r...

Selective polysilicon growth for deep trench polysilicon isolation...

Semiconductor device

Deep trench isolation with field oxide

Semiconductor die with improved thermal insulation between a power...

Semiconductor device

Semiconductor structure and manufacturing method thereof

RF substrate structure and method of production

Field-effect transistors and methods of their formation

Transistor with air gap under raised source/drain region in bulk se...

Trench shield isolation layer

IC with deep trench polysilicon oxidation

Bulk substrates with a self-aligned buried polycrystalline layer

Transistor with embedded isolation layer in bulk substrate

Bipolar transistor structure with collector on polycrystalline isol...

Heterojunction bipolar transistor with buried trap rich isolation r...

Method of fabricating semiconductor device

Integrated circuit structure with semiconductor-based isolation str...

Semiconductor device having side-diffused trench plug

Manufacturing process of a structured substrate

Selective polysilicon growth for deep trench polysilicon isolation...

Semiconductor die with improved thermal insulation between a power...

Semiconductor device

Semiconductor structures with body contact regions embedded in poly...

Trench gate device and method for making the same

Bulk substrates with a self-aligned buried polycrystalline layer

Semiconductor device comprising a deep trench isolation structure a...

Patents Applicationslast 30 patents

SINGLE-PHOTON AVALANCHE DIODES WITH AN INTEGRATED ACTIVE DEVICE

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

DEEP TRENCH ISOLATION WITH FIELD OXIDE

COMPOSITE STRUCTURE COMPRISING A USEFUL MONOCRYSTALLINE SIC LAYER O...

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CH...

METHOD FOR PREPARING A SUPPORT SUBSTRATE PROVIDED WITH A CHARGE-TRA...

SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

AVALANCHE PHOTODIODE

SEMICONDUCTOR CONTROLLED RECTIFIER AND METHOD TO FORM SAME

TRENCH ISOLATION STRUCTURES AND METHODS OF MAKING THEREOF

REDUCED SILICON DISLOCATION DEFECTS FROM DEEP SI TRENCH INTEGRATION

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...

SEMICONDUCTOR DIE WITH IMPROVED THERMAL INSULATION BETWEEN A POWER...

TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...

SEMICONDUCTOR DEVICE

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK

SEMICONDUCTOR CHIP MANUFACTURING METHOD

SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE

METHOD FOR DIRECT HYDROPHILIC BONDING OF SUBSTRATES

TRENCH SHIELD ISOLATION LAYER

RF SUBSTRATE STRUCTURE AND METHOD OF PRODUCTION

HEAT SPREADING ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METHOD FOR FORMING A USEFUL SUBSTRATE TRAPPING STRUCTURE