Processes wherein the final gate is made after the formation of the source and drain regions in the active layer

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CPC
H01L29/66871

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66871Processes wherein the final gate is made after the formation of the source and drain regions in the active layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Controlling threshold voltages through blocking layers
- Patent number 11,961,732
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling threshold voltages through blocking layers
- Patent number 11,430,652
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigation of time dependent dielectric breakdown
- Patent number 11,398,559
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,227,769
- Issue date Jan 18, 2022
- United Microelectronics Corp.
- Chun-Jung Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 11,004,944
- Issue date May 11, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 10,985,250
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate formation through etch back process
- Patent number 10,868,138
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,804,364
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,790,369
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,770,557
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,756,177
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,756,178
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (finFET) device structure and method fo...
- Patent number 10,700,181
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,680,074
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigation of time dependent dielectric breakdown
- Patent number 10,658,486
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacutring Co., Ltd.
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 10,658,473
- Issue date May 19, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-poly capacitor in a high-K metal gate process and m...
- Patent number 10,636,867
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,629,692
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 10,541,308
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire field effect transistor device having a replacement gate
- Patent number 10,522,621
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Hard mask layer to reduce loss of isolation material during dummy g...
- Patent number 10,446,399
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Channel stop imp for FinFET device
- Patent number 10,403,741
- Issue date Sep 3, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire field effect transistor having a metal gate surrounding se...
- Patent number 10,276,660
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Turnable breakdown voltage RF FET devices
- Patent number 10,109,716
- Issue date Oct 23, 2018
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,090,391
- Issue date Oct 2, 2018
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 10,079,287
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,038,063
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 9,960,263
- Issue date May 1, 2018
- Mitsubishi Electric Corporation
- Takahiro Nakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate structure and fabrication me...
- Patent number 9,728,620
- Issue date Aug 8, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ming Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 9,653,581
- Issue date May 16, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Wen-Tai Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Controlling Threshold Voltages Through Blocking Layers
- Publication number 20220359193
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN
- Publication number 20220352341
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jyun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN
- Publication number 20200243663
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20200194563
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20200083334
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE
- Publication number 20190229186
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180337241
- Publication date Nov 22, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20180331194
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20180323272
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180323268
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180269292
- Publication date Sep 20, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180226477
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180069088
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION
- Publication number 20140339671
- Publication date Nov 20, 2014
- Sameer PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRIP-GROUND FIELD PLATE
- Publication number 20140264637
- Publication date Sep 18, 2014
- Taiwan Semiconductor Manufacturing Company Limited
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20140217471
- Publication date Aug 7, 2014
- National Institute of Information and Communicatio ns Technology
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND AN INTERMEDIAT...
- Publication number 20140106553
- Publication date Apr 17, 2014
- ACCONEER AB
- Mikael Egard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Contacts and Related Semiconductor...
- Publication number 20120119260
- Publication date May 17, 2012
- Fabian Radulescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120012893
- Publication date Jan 19, 2012
- PANASONIC CORPORATION
- Kazushi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having Gates Including Oxidized Nickel and Re...
- Publication number 20110278590
- Publication date Nov 17, 2011
- Van Mieczkowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20110233559
- Publication date Sep 29, 2011
- RENESAS ELECTRONICS CORPORATION
- KOHJI ISHIKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME
- Publication number 20110221011
- Publication date Sep 15, 2011
- Eldat Bahat-Treidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD...
- Publication number 20110097886
- Publication date Apr 28, 2011
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING TRANSISTORS INCLUDING SELF-ALIGNED GATE ELEC...
- Publication number 20110018040
- Publication date Jan 27, 2011
- R. Peter Smith
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD...
- Publication number 20100173486
- Publication date Jul 8, 2010
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20100129992
- Publication date May 27, 2010
- PANASONIC CORPORATION
- Tomohiro MURATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROWAVE ACTIVATION ANNEALING PROCESS
- Publication number 20100120263
- Publication date May 13, 2010
- Fu-Kuo HSUEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device manufacturing method
- Publication number 20100048016
- Publication date Feb 25, 2010
- Oki Semiconductor Co., Ltd.
- Takayuki IZUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20090206373
- Publication date Aug 20, 2009
- Sharp Kabushiki Kaisha
- Norimasa YAFUNE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090050937
- Publication date Feb 26, 2009
- PANASONIC CORPORATION
- Tomohiro MURATA
- H01 - BASIC ELECTRIC ELEMENTS

Processes wherein the final gate is made after the formation of the source and drain regions in the active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Controlling threshold voltages through blocking layers

Controlling threshold voltages through blocking layers

Mitigation of time dependent dielectric breakdown

Method for fabricating semiconductor device

Gate cut device fabrication with extended height gates

Gate cut device fabrication with extended height gates

Metal gate formation through etch back process

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Self-limiting and confining epitaxial nucleation

Self-limiting and confining epitaxial nucleation

Fin field effect transistor (finFET) device structure and method fo...

Tunable breakdown voltage RF FET devices

Mitigation of time dependent dielectric breakdown

Gate cut device fabrication with extended height gates

Metal-insulator-poly capacitor in a high-K metal gate process and m...

Tunable breakdown voltage RF FET devices

Gate cut device fabrication with extended height gates

Nanowire field effect transistor device having a replacement gate

Hard mask layer to reduce loss of isolation material during dummy g...

Channel stop imp for FinFET device

Nanowire field effect transistor having a metal gate surrounding se...

Turnable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Gate cut device fabrication with extended height gates

Tunable breakdown voltage RF FET devices

Field effect transistor and method of manufacturing the same

Semiconductor device having metal gate structure and fabrication me...

Semiconductor device and method of making

Patents Applicationslast 30 patents

Controlling Threshold Voltages Through Blocking Layers

MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN

MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION

STRIP-GROUND FIELD PLATE

Ga2O3 SEMICONDUCTOR ELEMENT

PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND AN INTERMEDIAT...

Methods of Forming Semiconductor Contacts and Related Semiconductor...

SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Semiconductor Devices Having Gates Including Oxidized Nickel and Re...

FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME

SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD...

METHODS OF FABRICATING TRANSISTORS INCLUDING SELF-ALIGNED GATE ELEC...

SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD...

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

MICROWAVE ACTIVATION ANNEALING PROCESS

Semiconductor device manufacturing method

FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE