providing different silicide thicknesses on the gate and on source or drain

Industry

CPC
H01L29/66507

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66507providing different silicide thicknesses on the gate and on source or drain

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,973,124
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside power rail and method thereof
- Patent number 11,923,408
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melt anneal source and drain regions
- Patent number 11,855,146
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method for manufacturing a device including silicides...
- Patent number 11,563,020
- Issue date Jan 24, 2023
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside power rail and method thereof
- Patent number 11,482,594
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided gate structures
- Patent number 11,031,484
- Issue date Jun 8, 2021
- GLOBALFOUNDRIES U.S. INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including MOS transistor having silicided sour...
- Patent number 11,004,976
- Issue date May 11, 2021
- Samsung Electronics Co., Ltd.
- Sungkwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display driver semiconductor device and manufacturing method thereof
- Patent number 10,985,192
- Issue date Apr 20, 2021
- KEY FOUNDRY., LTD.
- Bo Seok Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing low-permittivity spacers
- Patent number 10,658,197
- Issue date May 19, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display driver semiconductor device and manufacturing method thereof
- Patent number 10,504,932
- Issue date Dec 10, 2019
- MagnaChip Semiconductor, Ltd.
- Bo Seok Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including a leveling dielectric fill material
- Patent number 10,395,981
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including silicide regions and methods of fab...
- Patent number 10,263,109
- Issue date Apr 16, 2019
- Samsung Electronics Co., Ltd.
- Sungkwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,263,005
- Issue date Apr 16, 2019
- Renesas Electronics Corporation
- Keisuke Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor structures and integrated circuits including LDMOS...
- Patent number 10,211,336
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including MOS transistor having silicided sour...
- Patent number 10,170,622
- Issue date Jan 1, 2019
- Samsung Electronics Co., Ltd.
- Sungkwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a dielectric layer with different thick...
- Patent number 10,134,860
- Issue date Nov 20, 2018
- NXP B.V.
- Jan Sonsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced integration of DMOS and CMOS semiconductor devices
- Patent number 10,134,641
- Issue date Nov 20, 2018
- Coolstar Technology, Inc.
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an air-gap gate sidewall spacer and...
- Patent number 10,128,334
- Issue date Nov 13, 2018
- GLOBALFOUNDRIES Inc.
- Emilie Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 10,121,700
- Issue date Nov 6, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulating germanium percentage in MOS devices
- Patent number 10,014,411
- Issue date Jul 3, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide formation using a cap layer
- Patent number 9,978,604
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming silicide regions and resulting MOS devices
- Patent number 9,947,758
- Issue date Apr 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicide regions and resulting MOS devices
- Patent number 9,899,494
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 9,799,667
- Issue date Oct 24, 2017
- Renesas Electronics Corporation
- Keisuke Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with silicided source and drain extensions and...
- Patent number 9,397,182
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulating germanium percentage in MOS devices
- Patent number 9,362,360
- Issue date Jun 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide formation using a cap layer
- Patent number 9,343,318
- Issue date May 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication and device configuration of asymmetrical DMOS...
- Patent number 9,337,329
- Issue date May 10, 2016
- Alpha and Omega Semiconductor Incorporated
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure with metallic layer over...
- Patent number 9,324,820
- Issue date Apr 26, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Andrew Joseph Kelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit
- Patent number 9,240,325
- Issue date Jan 19, 2016
- STMicroelectronics S.A.
- Sébastien Barnola
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230378316
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH MULTIPLE SILICIDE LAYERS
- Publication number 20230261088
- Publication date Aug 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230138401
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...
- Publication number 20230058216
- Publication date Feb 23, 2023
- Peking University
- Qianqian Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF
- Publication number 20220367619
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF
- Publication number 20220069076
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH SILICIDE LAYER AND FABRICATING METHOD OF...
- Publication number 20210313447
- Publication date Oct 7, 2021
- UNITED MICROELECTRONICS CORP.
- HAO SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SILICIDE STRUCTURES
- Publication number 20200411666
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DRIVER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200066759
- Publication date Feb 27, 2020
- Magnachip Semiconductor, Ltd.
- Bo Seok OH
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190341395
- Publication date Nov 7, 2019
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MOS TRANSISTOR HAVING SILICIDED SOUR...
- Publication number 20190214498
- Publication date Jul 11, 2019
- Samsung Electronics Co., Ltd.
- Sungkwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SALICIDE FORMATION USING A CAP LAYER
- Publication number 20180261461
- Publication date Sep 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DIELECTRIC LAYER WITH DIFFERENT THICK...
- Publication number 20180261676
- Publication date Sep 13, 2018
- NXP B.V.
- JAN SONSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20180006048
- Publication date Jan 4, 2018
- Renesas Electronics Corporation
- Keisuke Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170278856
- Publication date Sep 28, 2017
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MOS TRANSISTOR HAVING SILICIDED SOUR...
- Publication number 20170278967
- Publication date Sep 28, 2017
- Samsung Electronics Co., Ltd.
- Sungkwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Silicide Regions and Resulting MOS Devices
- Publication number 20170040432
- Publication date Feb 9, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modulating Germanium Percentage in MOS Devices
- Publication number 20150228724
- Publication date Aug 13, 2015
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Non-Uniform Stressor Doping
- Publication number 20150171189
- Publication date Jun 18, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140252436
- Publication date Sep 11, 2014
- TOHOKU UNIVERSITY
- Tomoyuki Suwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS AND FABRICATION METHOD THEREOF
- Publication number 20140191316
- Publication date Jul 10, 2014
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- NEIL ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION
- Publication number 20140167110
- Publication date Jun 19, 2014
- GLOBAL FOUNDRIES Inc.
- Peter JAVORKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE HAVING A HYBRID METAL GATE STACK
- Publication number 20140106531
- Publication date Apr 17, 2014
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE HAVING A HYBRID METAL GATE STACK
- Publication number 20140103457
- Publication date Apr 17, 2014
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCAVENGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
- Publication number 20140004695
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCAVENGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
- Publication number 20140001573
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULL SILICIDATION PREVENTION VIA DUAL NICKEL DEPOSITION APPROACH
- Publication number 20130320415
- Publication date Dec 5, 2013
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING METAL SALICIDE LAYERS
- Publication number 20130273734
- Publication date Oct 17, 2013
- United Microelectronics Corp.
- Tse-Yi LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Non-Uniform Stressor Doping
- Publication number 20130234217
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS

providing different silicide thicknesses on the gate and on source or drain

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor devices with backside power rail and method thereof

Melt anneal source and drain regions

Semiconductor method for manufacturing a device including silicides...

Semiconductor devices with backside power rail and method thereof

Silicided gate structures

Semiconductor device including MOS transistor having silicided sour...

Display driver semiconductor device and manufacturing method thereof

Method for producing low-permittivity spacers

Display driver semiconductor device and manufacturing method thereof

Semiconductor device including a leveling dielectric fill material

Semiconductor devices including silicide regions and methods of fab...

Method of manufacturing a semiconductor device

LDMOS transistor structures and integrated circuits including LDMOS...

Semiconductor device including MOS transistor having silicided sour...

Semiconductor device having a dielectric layer with different thick...

Enhanced integration of DMOS and CMOS semiconductor devices

Field effect transistor having an air-gap gate sidewall spacer and...

Semiconductor device and fabrication method thereof

Modulating germanium percentage in MOS devices

Salicide formation using a cap layer

Forming silicide regions and resulting MOS devices

Methods of forming silicide regions and resulting MOS devices

Method of manufacturing a semiconductor device

Transistor structure with silicided source and drain extensions and...

Modulating germanium percentage in MOS devices

Salicide formation using a cap layer

Method of fabrication and device configuration of asymmetrical DMOS...

Method for forming semiconductor structure with metallic layer over...

Method for making an integrated circuit

Patents Applicationslast 30 patents

MELT ANNEAL SOURCE AND DRAIN REGIONS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

TRANSISTORS WITH MULTIPLE SILICIDE LAYERS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...

SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF

SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF

TRANSISTOR STRUCTURE WITH SILICIDE LAYER AND FABRICATING METHOD OF...

DIFFERENTIAL SILICIDE STRUCTURES

DISPLAY DRIVER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING MOS TRANSISTOR HAVING SILICIDED SOUR...

SALICIDE FORMATION USING A CAP LAYER

SEMICONDUCTOR DEVICE HAVING A DIELECTRIC LAYER WITH DIFFERENT THICK...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING MOS TRANSISTOR HAVING SILICIDED SOUR...

Forming Silicide Regions and Resulting MOS Devices

Modulating Germanium Percentage in MOS Devices

MOS Devices Having Non-Uniform Stressor Doping

SEMICONDUCTOR DEVICE

MOS TRANSISTORS AND FABRICATION METHOD THEREOF

PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION

FIELD EFFECT TRANSISTOR DEVICE HAVING A HYBRID METAL GATE STACK

FIELD EFFECT TRANSISTOR DEVICE HAVING A HYBRID METAL GATE STACK

SCAVENGING METAL STACK FOR A HIGH-K GATE DIELECTRIC

SCAVENGING METAL STACK FOR A HIGH-K GATE DIELECTRIC

FULL SILICIDATION PREVENTION VIA DUAL NICKEL DEPOSITION APPROACH

METHOD OF MANUFACTURING METAL SALICIDE LAYERS

MOS Devices Having Non-Uniform Stressor Doping