Reaction chambers Boats for supporting the melt Substrate holders

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CPC
C30B19/06

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

Current Industry

C30B19/06Reaction chambers Boats for supporting the melt Substrate holders

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 11,453,956
- Issue date Sep 27, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
- Patent number 11,440,849
- Issue date Sep 13, 2022
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
- Patent number 11,373,864
- Issue date Jun 28, 2022
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
- Patent number 11,371,161
- Issue date Jun 28, 2022
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film formation apparatus and method of manufacturing semiconductor...
- Patent number 11,280,023
- Issue date Mar 22, 2022
- Denso Corporation
- Tatsuji Nagaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for electrochemical liquid phase epitaxy
- Patent number 10,538,860
- Issue date Jan 21, 2020
- THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Stephen Maldonado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing group 13 nitride crystal and group 13 nitr...
- Patent number 10,538,858
- Issue date Jan 21, 2020
- SCIOCS COMPANY LIMITED
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,519,565
- Issue date Dec 31, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned tunable metamaterials
- Patent number 10,501,867
- Issue date Dec 10, 2019
- Arturo A Ayon
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Preparation method and application of sodium barium fluoroborate bi...
- Patent number 10,487,419
- Issue date Nov 26, 2019
- XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCI...
- Shilie Pan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing crystal
- Patent number 10,443,149
- Issue date Oct 15, 2019
- Kyocera Corporation
- Chiaki Domoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,415,152
- Issue date Sep 17, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 10,400,352
- Issue date Sep 3, 2019
- Soraa, Inc.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group-III nitride crystal, group-III nitride c...
- Patent number 10,266,965
- Issue date Apr 23, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Organic semiconductor thin film production method
- Patent number 10,205,094
- Issue date Feb 12, 2019
- PI-CRYSTAL INC.
- Junichi Takeya
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
N-type SiC single crystal and method for its production
- Patent number 10,167,570
- Issue date Jan 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing crystal of silicon carbide, and crystal produc...
- Patent number 10,151,046
- Issue date Dec 11, 2018
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal and method for producing...
- Patent number 10,100,432
- Issue date Oct 16, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,094,044
- Issue date Oct 9, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,081,883
- Issue date Sep 25, 2018
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, prepar...
- Patent number 10,005,675
- Issue date Jun 26, 2018
- ECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCIENCES
- Guochun Zhang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for preparing single-crystal cubic sesquioxides and uses
- Patent number 9,945,049
- Issue date Apr 17, 2018
- CENTRE NATIONAL DE LA RECHERCHE SCINTIFIQI
- Philippe Veber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of SiC single crystal
- Patent number 9,920,449
- Issue date Mar 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for single crystal growth of photovoltaic perovskite materia...
- Patent number 9,812,660
- Issue date Nov 7, 2017
- Nutech Ventures
- Jinsong Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal by solution growth metho...
- Patent number 9,783,911
- Issue date Oct 10, 2017
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 9,732,437
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single-crystal ingot, SiC single crystal, and production method...
- Patent number 9,732,436
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC single crystal in the presence of a magn...
- Patent number 9,708,734
- Issue date Jul 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...
- Publication number 20250034751
- Publication date Jan 30, 2025
- TOHOKU UNIVERSITY
- Hiroyuki FUKUYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20200388491
- Publication date Dec 10, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20200385884
- Publication date Dec 10, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20200240038
- Publication date Jul 30, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for growth of a merged crystal by bonding at least a first a...
- Publication number 20200087813
- Publication date Mar 19, 2020
- Soraa, Inc.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE...
- Publication number 20180257993
- Publication date Sep 13, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180230623
- Publication date Aug 16, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...
- Publication number 20180163323
- Publication date Jun 14, 2018
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170327967
- Publication date Nov 16, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170327968
- Publication date Nov 16, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...
- Publication number 20170306522
- Publication date Oct 26, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...
- Publication number 20170298533
- Publication date Oct 19, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAININ...
- Publication number 20170260648
- Publication date Sep 14, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- YOSHIO OKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Crystal of Silicon Carbide, and Crystal Produc...
- Publication number 20170260647
- Publication date Sep 14, 2017
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20170198408
- Publication date Jul 13, 2017
- Toyota Jidosha Kabushiki Kaisha
- Motohisa KADO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170167049
- Publication date Jun 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT
- Publication number 20170145585
- Publication date May 25, 2017
- Soraa, Inc.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...
- Publication number 20170073839
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
- Publication number 20170067183
- Publication date Mar 9, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20170009373
- Publication date Jan 12, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170009374
- Publication date Jan 12, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITR...
- Publication number 20160348272
- Publication date Dec 1, 2016
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160340794
- Publication date Nov 24, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING CRYSTAL
- Publication number 20160340795
- Publication date Nov 24, 2016
- KYOCERA CORPORATION
- Chiaki DOMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD AND APPLICATION OF SODIUM BARIUM FLUOROBORATE BI...
- Publication number 20160305041
- Publication date Oct 20, 2016
- Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sci...
- Shilie PAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160273126
- Publication date Sep 22, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SINGLE CRYSTAL GROWTH OF PHOTOVOLTAIC PEROVSKITE MATERIA...
- Publication number 20160248028
- Publication date Aug 25, 2016
- NUTECH VENTURES
- Jinsong Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20160237590
- Publication date Aug 18, 2016
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE SIC SINGLE CRYSTAL AND METHOD FOR ITS PRODUCTION
- Publication number 20160208411
- Publication date Jul 21, 2016
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS
- Publication number 20160194785
- Publication date Jul 7, 2016
- Solar World Industries America Inc.
- Nathan STODDARD
- C30 - CRYSTAL GROWTH

Reaction chambers Boats for supporting the melt Substrate holders

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for growth of a merged crystal by bonding at least a first a...

SiC crucible, SiC sintered body, and method of producing SiC single...

Method of forming oxide film, method of manufacturing semiconductor...

Method of forming oxide film, method of manufacturing semiconductor...

Film formation apparatus and method of manufacturing semiconductor...

Devices and methods for electrochemical liquid phase epitaxy

Method for manufacturing group 13 nitride crystal and group 13 nitr...

SiC single crystal and method for producing same

Self-aligned tunable metamaterials

Preparation method and application of sodium barium fluoroborate bi...

SiC single crystal and method for producing same

Method of producing crystal

SiC single crystal and method for producing same

Method for growth of a merged crystal by bonding at least a first a...

Method for producing group-III nitride crystal, group-III nitride c...

Organic semiconductor thin film production method

N-type SiC single crystal and method for its production

Method for producing crystal of silicon carbide, and crystal produc...

Apparatus for producing SiC single crystal and method for producing...

SiC single crystal and method for producing same

SiC single crystal production method and production apparatus

Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, prepar...

Method for preparing single-crystal cubic sesquioxides and uses

Production method of SiC single crystal

Method for single crystal growth of photovoltaic perovskite materia...

Apparatus for producing SiC single crystal by solution growth metho...

SiC single crystal and method for producing same

SiC single-crystal ingot, SiC single crystal, and production method...

Production apparatus and production method of SiC single crystal

Method for producing a SiC single crystal in the presence of a magn...

Patents Applicationslast 30 patents

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...

METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...

METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...

FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR...

Method for growth of a merged crystal by bonding at least a first a...

SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE...

METHOD OF PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...

SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAININ...

Method for Producing Crystal of Silicon Carbide, and Crystal Produc...

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITR...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD OF PRODUCING CRYSTAL

PREPARATION METHOD AND APPLICATION OF SODIUM BARIUM FLUOROBORATE BI...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR SINGLE CRYSTAL GROWTH OF PHOTOVOLTAIC PEROVSKITE MATERIA...

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

N-TYPE SIC SINGLE CRYSTAL AND METHOD FOR ITS PRODUCTION

APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS