Reading or sensing circuits or methods

Industry

CPC
G11C11/1673

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/1673Reading or sensing circuits or methods

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Methods of writing and forming memory device
- Patent number 12,324,165
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Cryogenic memory cell and memory device
- Patent number 12,315,543
- Issue date May 27, 2025
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Lei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor element with a magnetic domain wall in a magnetic free la...
- Patent number 12,315,542
- Issue date May 27, 2025
- Samsung Electronics Co., Ltd.
- Jeong-Heon Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked spin-orbit-torque magnetoresistive random-access memory
- Patent number 12,317,509
- Issue date May 27, 2025
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,310,036
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Secure wear levelling of non-volatile memory based on Galois field...
- Patent number 12,300,295
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Martin Hassner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array refresh scheme
- Patent number 12,300,296
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cryptographic MRAM and methods thereof
- Patent number 12,299,182
- Issue date May 13, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic random access memory structure
- Patent number 12,300,292
- Issue date May 13, 2025
- Industrial Technology Research Institute
- Hsin-Han Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 12,300,293
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 12,293,096
- Issue date May 6, 2025
- Kioxia Corporation
- Kosuke Hatsuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-state spintronic device, memory cell, memory array and read-w...
- Patent number 12,293,781
- Issue date May 6, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for implementation of symmetric tree mode...
- Patent number 12,293,796
- Issue date May 6, 2025
- SanDisk Technologies, Inc.
- Eran Sharon
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetization rotational element, magnetoresistance effect element,...
- Patent number 12,290,002
- Issue date Apr 29, 2025
- TDK Corporation
- Yugo Ishitani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory with data scrubbing
- Patent number 12,283,298
- Issue date Apr 22, 2025
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for inference of read thresholds based on...
- Patent number 12,283,328
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Eran Sharon
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic element using spin-orbit torque and magnetic tunnel junction...
- Patent number 12,274,178
- Issue date Apr 8, 2025
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiferroic memory with piezoelectric layers and related methods
- Patent number 12,274,073
- Issue date Apr 8, 2025
- Eagle Technology, LLC
- Matt Bauer
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage array, and interconnection structure and method for operati...
- Patent number 12,266,417
- Issue date Apr 1, 2025
- ZHEJIANG HIKSTOR TECHNOLOGY CO. , LTD.
- Kunkun Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved write voltage according to s...
- Patent number 12,260,890
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure, method of reading data from semiconductor...
- Patent number 12,254,912
- Issue date Mar 18, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jiefang Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile electro-optical high-bandwidth ultra-fast large-scale...
- Patent number 12,254,913
- Issue date Mar 18, 2025
- University of Southern California
- Ajey Jacob
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile SRAM
- Patent number 12,254,923
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic laminated film, magnetic memory element, magnetic memory,...
- Patent number 12,236,988
- Issue date Feb 25, 2025
- Tohoku University
- Yoshiaki Saito
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Concurrent multi-bit self-referenced read of programmable resistanc...
- Patent number 12,237,010
- Issue date Feb 25, 2025
- SanDisk Technologies, Inc.
- Nathan Franklin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer structure for magnetic memory element, magnetic memory elemen...
- Patent number 12,236,989
- Issue date Feb 25, 2025
- Kyoto University
- Teruo Ono
- G11 - INFORMATION STORAGE
Information Patent Grant
Asynchronous true random number generator using STT-MTJ
- Patent number 12,230,306
- Issue date Feb 18, 2025
- Technion Research & Development Foundation Limited
- Shahar Kvatinsky
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-orbit torque type magnetoresistance effect element, and method...
- Patent number 12,232,426
- Issue date Feb 18, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Device with neural network
- Patent number 12,230,321
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon Chun
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SOT MRAM INCLUDING MTJ AND SELECTOR LOCATED ON OPPOSITE SIDES OF SO...
- Publication number 20250176439
- Publication date May 29, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Jeffrey LILLE
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...
- Publication number 20250166683
- Publication date May 22, 2025
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...
- Publication number 20250169370
- Publication date May 22, 2025
- KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
- Saleh Ahmad S BUNAIYAN
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...
- Publication number 20250166684
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...
- Publication number 20250166685
- Publication date May 22, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong KANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE DEVICE
- Publication number 20250157517
- Publication date May 15, 2025
- Sony Semiconductor Solutions Corporation
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20250160218
- Publication date May 15, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE WITH NEURAL NETWORK
- Publication number 20250149085
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon CHUN
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY
- Publication number 20250140297
- Publication date May 1, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20250140312
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH A BIAS CIRCUIT
- Publication number 20250140296
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Access Control through Permissions Specified in Page Table E...
- Publication number 20250139016
- Publication date May 1, 2025
- Micron Technology, Inc.
- Steven Jeffrey Wallach
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR
- Publication number 20250118349
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20250120092
- Publication date Apr 10, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20250120322
- Publication date Apr 10, 2025
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZED ROTARY ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC M...
- Publication number 20250113740
- Publication date Apr 3, 2025
- TDK Corporation
- Takuya ASHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...
- Publication number 20250104754
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250098545
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Kenji FUKUDA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250095706
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Hiroaki MAEKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...
- Publication number 20250078890
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-LIEN LINUS LU
- G11 - INFORMATION STORAGE
Information Patent Application
LAYOUT PATTERN OF MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250078891
- Publication date Mar 6, 2025
- UNITED MICROELECTRONICS CORP.
- Hung-Chan Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...
- Publication number 20250078892
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE MEMORY DEVICE
- Publication number 20250069633
- Publication date Feb 27, 2025
- Centre National de la Recherche Scientifique
- Victorien BRECTE
- G11 - INFORMATION STORAGE
Information Patent Application
MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM
- Publication number 20250061933
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250054530
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250046357
- Publication date Feb 6, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ACCESS METHOD
- Publication number 20250046356
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Jeffrey Junhao XU
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250029644
- Publication date Jan 23, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE

Reading or sensing circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of writing and forming memory device

Cryogenic memory cell and memory device

Memristor element with a magnetic domain wall in a magnetic free la...

Stacked spin-orbit-torque magnetoresistive random-access memory

Threshold voltage-modulated memory device using variable-capacitanc...

Secure wear levelling of non-volatile memory based on Galois field...

Cross-point array refresh scheme

Cryptographic MRAM and methods thereof

Magnetic random access memory structure

Method for writing to magnetic random access memory

Memory system

Three-state spintronic device, memory cell, memory array and read-w...

Storage system and method for implementation of symmetric tree mode...

Magnetization rotational element, magnetoresistance effect element,...

Magnetoresistive random access memory with data scrubbing

Storage system and method for inference of read thresholds based on...

Logic element using spin-orbit torque and magnetic tunnel junction...

Multiferroic memory with piezoelectric layers and related methods

Storage array, and interconnection structure and method for operati...

Memory device which generates improved write voltage according to s...

Semiconductor structure, method of reading data from semiconductor...

Non-volatile electro-optical high-bandwidth ultra-fast large-scale...

Nonvolatile SRAM

Semiconductor memory

Magnetic laminated film, magnetic memory element, magnetic memory,...

Concurrent multi-bit self-referenced read of programmable resistanc...

Layer structure for magnetic memory element, magnetic memory elemen...

Asynchronous true random number generator using STT-MTJ

Spin-orbit torque type magnetoresistance effect element, and method...

Device with neural network

Patents Applicationslast 30 patents

SOT MRAM INCLUDING MTJ AND SELECTOR LOCATED ON OPPOSITE SIDES OF SO...

STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...

APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...

SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...

READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...

NON-VOLATILE STORAGE DEVICE

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

DEVICE WITH NEURAL NETWORK

MAGNETORESISTIVE EFFECT MEMORY

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

MEMORY DEVICE WITH A BIAS CIRCUIT

Memory Access Control through Permissions Specified in Page Table E...

READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR

MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIZED ROTARY ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC M...

CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...

MAGNETIC MEMORY DEVICE

SEMICONDUCTOR STORAGE DEVICE

MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...

LAYOUT PATTERN OF MAGNETORESISTIVE RANDOM ACCESS MEMORY

ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...

MAGNETO RESISTIVE MEMORY DEVICE

MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM

MEMORY DEVICE AND OPERATING METHOD THEREOF

ELECTRONIC DEVICE

MEMORY AND ACCESS METHOD

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

MAGNETIC MEMORY DEVICE

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION