Reading or sensing circuits or methods

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G11C11/1673

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/1673Reading or sensing circuits or methods

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Current steering in reading magnetic tunnel junction
- Patent number 12,217,782
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gaurav Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory system
- Patent number 12,217,781
- Issue date Feb 4, 2025
- Kioxia Corporation
- Katsuhiko Hoya
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,211,535
- Issue date Jan 28, 2025
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device comprising magnetic tunnel junctions
- Patent number 12,213,322
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Kyung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory sense amplifier trimming
- Patent number 12,211,579
- Issue date Jan 28, 2025
- Taiwain Semiconductor Manufacturing Company, Ltd.
- Yi-Chun Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor wafer testing system and related method for improving...
- Patent number 12,210,055
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent write to programmable resistance memory cells in cross-p...
- Patent number 12,205,638
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Grant
Overwrite read methods for resistance switching memory devices
- Patent number 12,205,640
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Michael K. Grobis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cache memory and method of its manufacture
- Patent number 12,205,623
- Issue date Jan 21, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Chong Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell with pair of magnetic tunnel junctions having opposite st...
- Patent number 12,205,624
- Issue date Jan 21, 2025
- Korea Advanced Institute of Science and Technology
- Hoi Jun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance non-volatile memory with a gate insulator film...
- Patent number 12,207,480
- Issue date Jan 21, 2025
- Kioxia Corporation
- Tomoki Chiba
- G11 - INFORMATION STORAGE
Information Patent Grant
Synapse memory
- Patent number 12,198,039
- Issue date Jan 14, 2025
- International Business Machines Corporation
- Takeo Yasuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory circuit and method of operating the same
- Patent number 12,190,949
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Layout pattern of magnetoresistive random access memory
- Patent number 12,190,926
- Issue date Jan 7, 2025
- United Microelectronics Corp.
- Hung-Chan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a bias circuit
- Patent number 12,190,927
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory device having a metal layer d...
- Patent number 12,190,928
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array, memory cell, and data read and write method thereof
- Patent number 12,190,929
- Issue date Jan 7, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yulei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for training artificial neural networks
- Patent number 12,182,697
- Issue date Dec 31, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Michail Tzoufras
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Enhancing tunnel magnetoresistance in memory device comprising a me...
- Patent number 12,183,379
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layered magnetic random access memory and electronic device
- Patent number 12,176,017
- Issue date Dec 24, 2024
- Huawei Technologies Co., Ltd.
- Li Ye
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having bitline segmented into bitline segments and re...
- Patent number 12,176,016
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,170,106
- Issue date Dec 17, 2024
- Kioxia Corporation
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Midpoint sensing reference generation for STT-MRAM
- Patent number 12,165,684
- Issue date Dec 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices
- Patent number 12,165,683
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Stuart Papworth Parkin
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable PUF device based on fully electric field-controlled...
- Patent number 12,160,529
- Issue date Dec 3, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong Xing
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic memory device
- Patent number 12,160,997
- Issue date Dec 3, 2024
- Kioxia Corporation
- Masayoshi Iwayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramp write techniques
- Patent number 12,159,659
- Issue date Dec 3, 2024
- ARM Limited
- Supreet Jeloka
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent memory access operations
- Patent number 12,159,664
- Issue date Dec 3, 2024
- ARM Limited
- Lalit Gupta
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250046357
- Publication date Feb 6, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ACCESS METHOD
- Publication number 20250046356
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Jeffrey Junhao XU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250029644
- Publication date Jan 23, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20250031581
- Publication date Jan 23, 2025
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF OPERATING MAGNETIC MEMORY DEVICES
- Publication number 20250029670
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE MEMORY FOR MONOLITHIC DATA PROCESSING
- Publication number 20250022497
- Publication date Jan 16, 2025
- Honeywell International Inc.
- Romney R. Katti
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND MEMORY SYSTEM
- Publication number 20250022498
- Publication date Jan 16, 2025
- KIOXIA Corporation
- Shogo MUTO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND OPERATING METHOD
- Publication number 20250022499
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
- Publication number 20250014618
- Publication date Jan 9, 2025
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...
- Publication number 20250014620
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Chanho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Storage Array, and Interconnection Structure and Method for Operati...
- Publication number 20250006228
- Publication date Jan 2, 2025
- ZHEJIANG HIKSTOR TECHNOLOGY CO., LTD.
- Kunkun LI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT
- Publication number 20250006238
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- DAISHI ISOGAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240428837
- Publication date Dec 26, 2024
- KIOXIA Corporation
- Kosuke HATSUDA
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE
- Publication number 20240423096
- Publication date Dec 19, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Takanori MATSUZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM BASED ON THE FERROMAGNETIC FILM WITH IN-PLANE BIAXIAL ANISOTROPY
- Publication number 20240395300
- Publication date Nov 28, 2024
- Korea University Research and Business Foundation
- Sanghoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING...
- Publication number 20240397731
- Publication date Nov 28, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun SUN
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS CO...
- Publication number 20240380401
- Publication date Nov 14, 2024
- iCometrue Company Ltd.
- Jin-Yuan Lee
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR TESTING AND REPAIRING MEMORY DEVICE
- Publication number 20240379183
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Application
EXTERNAL MAGNETIC FIELD DETECTION FOR MRAM DEVICE
- Publication number 20240371459
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...
- Publication number 20240371424
- Publication date Nov 7, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart S.P. PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STORED WITH ENCODED DATA
- Publication number 20240371442
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF MANUFACTURING MAGNETIC RANDOM ACCESS MEMORY, AND METHODS...
- Publication number 20240365683
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Baohua NIU
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMORPHIC DEVICE AND DRIVING METHOD THEREOF
- Publication number 20240354059
- Publication date Oct 24, 2024
- Samsung Electronics Co., Ltd.
- Sungmeen Myung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE

Reading or sensing circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory readout circuit and method

Current steering in reading magnetic tunnel junction

Memory device and memory system

Magnetoresistive memory device and method of operating same using f...

Semiconductor memory device comprising magnetic tunnel junctions

Memory sense amplifier trimming

Semiconductor wafer testing system and related method for improving...

Concurrent write to programmable resistance memory cells in cross-p...

Overwrite read methods for resistance switching memory devices

Cache memory and method of its manufacture

MRAM cell with pair of magnetic tunnel junctions having opposite st...

Variable resistance non-volatile memory with a gate insulator film...

Synapse memory

Memory circuit and method of operating the same

Layout pattern of magnetoresistive random access memory

Memory device with a bias circuit

Magnetoresistive random access memory device having a metal layer d...

Memory array, memory cell, and data read and write method thereof

System and method for training artificial neural networks

Enhancing tunnel magnetoresistance in memory device comprising a me...

Multi-layered magnetic random access memory and electronic device

Memory device having bitline segmented into bitline segments and re...

Magnetic memory device

One time programmable (OTP) magnetoresistive random-access memory (...

Midpoint sensing reference generation for STT-MRAM

Magnetic memory devices

Reconfigurable PUF device based on fully electric field-controlled...

Magnetic memory device

Ramp write techniques

Concurrent memory access operations

Patents Applicationslast 30 patents

ELECTRONIC DEVICE

MEMORY AND ACCESS METHOD

MAGNETIC MEMORY DEVICE

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT

METHODS OF OPERATING MAGNETIC MEMORY DEVICES

MAGNETO RESISTIVE MEMORY FOR MONOLITHIC DATA PROCESSING

MAGNETIC MEMORY AND MEMORY SYSTEM

MEMORY SYSTEM AND OPERATING METHOD

Doping Process To Refine Grain Size For Smoother BiSb Film Surface

MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...

Storage Array, and Interconnection Structure and Method for Operati...

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

SEMICONDUCTOR CIRCUIT

MEMORY DEVICE

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE

MRAM BASED ON THE FERROMAGNETIC FILM WITH IN-PLANE BIAXIAL ANISOTROPY

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING...

NONVOLATILE MEMORY DEVICE

LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS CO...

METHOD FOR TESTING AND REPAIRING MEMORY DEVICE

EXTERNAL MAGNETIC FIELD DETECTION FOR MRAM DEVICE

METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...

NON-VOLATILE MEMORY STORED WITH ENCODED DATA

METHODS OF MANUFACTURING MAGNETIC RANDOM ACCESS MEMORY, AND METHODS...

NEUROMORPHIC DEVICE AND DRIVING METHOD THEREOF

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...