Reading or sensing circuits or methods

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CPC
G11C11/1673

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/1673Reading or sensing circuits or methods

Industries

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Patents Grantslast 30 patents

Information Patent Grant
MTJ operation methods employing opposite polarity recovery pulse
- Patent number 12,361,997
- Issue date Jul 15, 2025
- Kioxia Corporation
- Naoki Matsushita
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for spin orbit torque based memory device
- Patent number 12,361,996
- Issue date Jul 15, 2025
- Ceremorphic, Inc.
- Akshaykumar Salimath
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM reference current
- Patent number 12,354,635
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Photonic spin register, information writing method, and information...
- Patent number 12,347,506
- Issue date Jul 1, 2025
- The University of Tokyo
- Satoru Nakatsuji
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices, circuits and methods of adjusting a sensing current...
- Patent number 12,347,474
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating a voltage-controlled magnetic...
- Patent number 12,347,475
- Issue date Jul 1, 2025
- Imec VZW
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetic random access memory circuit and layout...
- Patent number 12,340,830
- Issue date Jun 24, 2025
- United Microelectronics Corp.
- Chun-Yen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-rail sense circuit with pre-charge transistors and memory cir...
- Patent number 12,340,841
- Issue date Jun 24, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Siva Kumar Chinthu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory stored with encoded data
- Patent number 12,334,151
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-dimensional material-based selector with stack unit, memory uni...
- Patent number 12,336,188
- Issue date Jun 17, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic array and method for manufacturing magnetic array
- Patent number 12,336,189
- Issue date Jun 17, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory including transistors and magnetoresistive elements...
- Patent number 12,336,191
- Issue date Jun 17, 2025
- Kioxia Corporation
- Yoshihiro Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic domain wall-based memory device with track-crossing archit...
- Patent number 12,327,578
- Issue date Jun 10, 2025
- Imec VZW
- Sebastien Couet
- G11 - INFORMATION STORAGE
Information Patent Grant
Inspection device
- Patent number 12,327,579
- Issue date Jun 10, 2025
- Samsung Electronics Co., Ltd.
- Shinji Ueyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of writing and forming memory device
- Patent number 12,324,165
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Cryogenic memory cell and memory device
- Patent number 12,315,543
- Issue date May 27, 2025
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Lei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor element with a magnetic domain wall in a magnetic free la...
- Patent number 12,315,542
- Issue date May 27, 2025
- Samsung Electronics Co., Ltd.
- Jeong-Heon Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked spin-orbit-torque magnetoresistive random-access memory
- Patent number 12,317,509
- Issue date May 27, 2025
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,310,036
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Secure wear levelling of non-volatile memory based on Galois field...
- Patent number 12,300,295
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Martin Hassner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array refresh scheme
- Patent number 12,300,296
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cryptographic MRAM and methods thereof
- Patent number 12,299,182
- Issue date May 13, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic random access memory structure
- Patent number 12,300,292
- Issue date May 13, 2025
- Industrial Technology Research Institute
- Hsin-Han Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 12,300,293
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 12,293,096
- Issue date May 6, 2025
- Kioxia Corporation
- Kosuke Hatsuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-state spintronic device, memory cell, memory array and read-w...
- Patent number 12,293,781
- Issue date May 6, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for implementation of symmetric tree mode...
- Patent number 12,293,796
- Issue date May 6, 2025
- SanDisk Technologies, Inc.
- Eran Sharon
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetization rotational element, magnetoresistance effect element,...
- Patent number 12,290,002
- Issue date Apr 29, 2025
- TDK Corporation
- Yugo Ishitani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory with data scrubbing
- Patent number 12,283,298
- Issue date Apr 22, 2025
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for inference of read thresholds based on...
- Patent number 12,283,328
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Eran Sharon
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DEVICE HAVING ROWS OF MRAM CELLS CONFIGURED FOR CONCURRENT WRITING...
- Publication number 20250239285
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Jen Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250241208
- Publication date Jul 24, 2025
- Samsung Electronics Co., Ltd.
- Jae Hong LEE
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20250228136
- Publication date Jul 10, 2025
- Samsung Electronics Co., Ltd.
- Wonhyeok Heo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING REFERENCE RESISTANCE
- Publication number 20250226049
- Publication date Jul 10, 2025
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210083
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM)
- Publication number 20250210086
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210085
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
VCMA MRAM DEVICE
- Publication number 20250210082
- Publication date Jun 26, 2025
- IMEC vzw
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210084
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SRAM
- Publication number 20250210107
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250210121
- Publication date Jun 26, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart Papworth Parkin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250201291
- Publication date Jun 19, 2025
- Industrial Technology Research Institute
- Hsin-Han Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AN...
- Publication number 20250204263
- Publication date Jun 19, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY AND IN-MEMORY COMPUTING CIRCUIT
- Publication number 20250191654
- Publication date Jun 12, 2025
- Peking University
- Zongwei WANG
- G11 - INFORMATION STORAGE
Information Patent Application
SOT MRAM INCLUDING MTJ AND SELECTOR LOCATED ON OPPOSITE SIDES OF SO...
- Publication number 20250176439
- Publication date May 29, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Jeffrey LILLE
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...
- Publication number 20250169370
- Publication date May 22, 2025
- KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
- Saleh Ahmad S BUNAIYAN
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...
- Publication number 20250166683
- Publication date May 22, 2025
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...
- Publication number 20250166684
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...
- Publication number 20250166685
- Publication date May 22, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong KANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE DEVICE
- Publication number 20250157517
- Publication date May 15, 2025
- Sony Semiconductor Solutions Corporation
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20250160218
- Publication date May 15, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE WITH NEURAL NETWORK
- Publication number 20250149085
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon CHUN
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY
- Publication number 20250140297
- Publication date May 1, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20250140312
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH A BIAS CIRCUIT
- Publication number 20250140296
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Access Control through Permissions Specified in Page Table E...
- Publication number 20250139016
- Publication date May 1, 2025
- Micron Technology, Inc.
- Steven Jeffrey Wallach
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR
- Publication number 20250118349
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20250120092
- Publication date Apr 10, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20250120322
- Publication date Apr 10, 2025
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZED ROTARY ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC M...
- Publication number 20250113740
- Publication date Apr 3, 2025
- TDK Corporation
- Takuya ASHIDA
- G11 - INFORMATION STORAGE

Reading or sensing circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

MTJ operation methods employing opposite polarity recovery pulse

System and method for spin orbit torque based memory device

MRAM reference current

Photonic spin register, information writing method, and information...

Memory devices, circuits and methods of adjusting a sensing current...

Memory device and method of operating a voltage-controlled magnetic...

Spin-orbit torque magnetic random access memory circuit and layout...

Multi-rail sense circuit with pre-charge transistors and memory cir...

Non-volatile memory stored with encoded data

Two-dimensional material-based selector with stack unit, memory uni...

Magnetic array and method for manufacturing magnetic array

Magnetic memory including transistors and magnetoresistive elements...

Magnetic domain wall-based memory device with track-crossing archit...

Inspection device

Methods of writing and forming memory device

Cryogenic memory cell and memory device

Memristor element with a magnetic domain wall in a magnetic free la...

Stacked spin-orbit-torque magnetoresistive random-access memory

Threshold voltage-modulated memory device using variable-capacitanc...

Secure wear levelling of non-volatile memory based on Galois field...

Cross-point array refresh scheme

Cryptographic MRAM and methods thereof

Magnetic random access memory structure

Method for writing to magnetic random access memory

Memory system

Three-state spintronic device, memory cell, memory array and read-w...

Storage system and method for implementation of symmetric tree mode...

Magnetization rotational element, magnetoresistance effect element,...

Magnetoresistive random access memory with data scrubbing

Storage system and method for inference of read thresholds based on...

Patents Applicationslast 30 patents

DEVICE HAVING ROWS OF MRAM CELLS CONFIGURED FOR CONCURRENT WRITING...

SEMICONDUCTOR DEVICE

VARIABLE RESISTANCE MEMORY DEVICE

MEMORY DEVICE INCLUDING REFERENCE RESISTANCE

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM)

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

VCMA MRAM DEVICE

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

NONVOLATILE SRAM

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AN...

MEMORY ARRAY AND IN-MEMORY COMPUTING CIRCUIT

SOT MRAM INCLUDING MTJ AND SELECTOR LOCATED ON OPPOSITE SIDES OF SO...

APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...

STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...

SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...

READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...

NON-VOLATILE STORAGE DEVICE

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

DEVICE WITH NEURAL NETWORK

MAGNETORESISTIVE EFFECT MEMORY

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

MEMORY DEVICE WITH A BIAS CIRCUIT

Memory Access Control through Permissions Specified in Page Table E...

READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR

MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIZED ROTARY ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC M...