Recessed field plates

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CPC
H01L29/407

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/407Recessed field plates

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation regions for charge collection and removal
- Patent number 12,159,910
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili Raghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,981
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,119,385
- Issue date Oct 15, 2024
- Kabushiki Kaisha Toshiba
- Hiro Gangi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,113,533
- Issue date Oct 8, 2024
- Rohm Co., Ltd.
- Naoki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,159
- Issue date Oct 1, 2024
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,100,743
- Issue date Sep 24, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Ying-Chi Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 12,100,740
- Issue date Sep 24, 2024
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and junction edge region thereof
- Patent number 12,100,742
- Issue date Sep 24, 2024
- Nanjing Sinnopower Technology Co., Ltd.
- Wenfang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming thereof
- Patent number 12,100,706
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhu-Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,094,968
- Issue date Sep 17, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki Katou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate
- Patent number 12,094,969
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,094,929
- Issue date Sep 17, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and power semiconductor chip
- Patent number 12,094,961
- Issue date Sep 17, 2024
- Hyundai Mobis Co., Ltd.
- Ju Hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor circuit
- Patent number 12,087,850
- Issue date Sep 10, 2024
- Kabushiki Kaisha Toshiba
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,849
- Issue date Sep 10, 2024
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices including angled gate trenches
- Patent number 12,080,790
- Issue date Sep 3, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,080,792
- Issue date Sep 3, 2024
- Denso Corporation
- Youhei Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 12,074,215
- Issue date Aug 27, 2024
- Lapis Semiconductor Co., Ltd.
- Tomomi Yamanobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a gate dielectric stack that incl...
- Patent number 12,068,390
- Issue date Aug 20, 2024
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,310
- Issue date Aug 20, 2024
- Mitsubishi Electric Corporation
- Munenori Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor arrangement with a load transistor and a sense transistor
- Patent number 12,062,718
- Issue date Aug 13, 2024
- Infineon Technologies Austria AG
- Gerhard Noebauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,062,654
- Issue date Aug 13, 2024
- Mitsubishi Electric Corporation
- Takuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing a trench power MOSFET
- Patent number 12,062,717
- Issue date Aug 13, 2024
- SK keyfoundry Inc.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,057,501
- Issue date Aug 6, 2024
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421199
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240413240
- Publication date Dec 12, 2024
- Magnachip Semiconductor, Ltd.
- Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE
- Publication number 20240405761
- Publication date Dec 5, 2024
- INNOVISION SEMICONDUCTOR INC
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405081
- Publication date Dec 5, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Ying-Chi Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...
- Publication number 20240405098
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maurizio Gabriele CASTORINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240405121
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Chia-Ming Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240395926
- Publication date Nov 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES
- Publication number 20240395927
- Publication date Nov 28, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240395878
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Yuta NABUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240387648
- Publication date Nov 21, 2024
- RENESAS ELECTRONICS CORPORATION
- Katsumi EIKYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240371865
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHU-MIN SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE
- Publication number 20240363698
- Publication date Oct 31, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363710
- Publication date Oct 31, 2024
- ROHM CO., LTD.
- Kenta WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FIELD PLATE STRUCTURE
- Publication number 20240363700
- Publication date Oct 31, 2024
- Lars Mueller-Meskamp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRENCH STRUCTURE WITH LOWER, UPPER, A...
- Publication number 20240363699
- Publication date Oct 31, 2024
- Infineon Technologies Austria AG
- Annett Winzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355889
- Publication date Oct 24, 2024
- ROHM CO., LTD.
- Junya FUKUNISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TYPE IGBT AND METHOD FOR DRIVING THE SAME
- Publication number 20240356542
- Publication date Oct 24, 2024
- WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.
- TETSUYA OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355814
- Publication date Oct 24, 2024
- Mitsubishi Electric Corporation
- Munenori IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ARRANGEMENT WITH A LOAD TRANSISTOR AND A SENSE TRANSISTOR
- Publication number 20240355923
- Publication date Oct 24, 2024
- Infineon Technologies Austria AG
- Gerhard Noebauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...
- Publication number 20240347585
- Publication date Oct 17, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240347586
- Publication date Oct 17, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS
- Publication number 20240347607
- Publication date Oct 17, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240339506
- Publication date Oct 10, 2024
- Infineon Technologies Austria AG
- Michael Hutzler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339507
- Publication date Oct 10, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE
- Publication number 20240332287
- Publication date Oct 3, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhibo Guo
- H01 - BASIC ELECTRIC ELEMENTS

Recessed field plates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Trench field effect transistor structure comprising epitaxial layer...

Electronic device including a transistor and a shield electrode

Semiconductor device and manufacturing method thereof

Reverse conducting IGBT with controlled anode injection

Isolation regions for charge collection and removal

Semiconductor device

Semiconductor device having contact trenches extending from opposit...

Field effect transistor

Semiconductor device

Semiconductor device

Semiconductor device and method for forming the same

Threshold voltage adjustment using adaptively biased shield plate

Semiconductor device and junction edge region thereof

Semiconductor structure and method of forming thereof

Semiconductor device and method for manufacturing same

Transistor device having a field plate

Semiconductor power device

Power semiconductor device and power semiconductor chip

Semiconductor device and semiconductor circuit

Semiconductor device

Semiconductor device

Power semiconductor devices including angled gate trenches

Semiconductor device and method for manufacturing same

Semiconductor device and semiconductor device manufacturing method

Power semiconductor device having a gate dielectric stack that incl...

Semiconductor device

Transistor arrangement with a load transistor and a sense transistor

Semiconductor device and method of manufacturing semiconductor device

Structure and method for manufacturing a trench power MOSFET

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...

GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...

SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A FIELD PLATE STRUCTURE

SEMICONDUCTOR DEVICE HAVING A TRENCH STRUCTURE WITH LOWER, UPPER, A...

SEMICONDUCTOR DEVICE

TRENCH GATE TYPE IGBT AND METHOD FOR DRIVING THE SAME

SEMICONDUCTOR DEVICE

TRANSISTOR ARRANGEMENT WITH A LOAD TRANSISTOR AND A SENSE TRANSISTOR

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...

SEMICONDUCTOR DEVICE

SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE