Recessed field plates

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CPC
H01L29/407

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/407Recessed field plates

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including insulated gate bipolar transistor
- Patent number 12,224,316
- Issue date Feb 11, 2025
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,319
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure for a trench power MOSFET with a split gate...
- Patent number 12,224,342
- Issue date Feb 11, 2025
- STMicroelectronics Pte Ltd
- Yean Ching Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,345
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench intersections
- Patent number 12,218,188
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices, systems, and methods for remote video retrieval
- Patent number 12,217,583
- Issue date Feb 4, 2025
- LiveView Technologies, LLC
- Steven R. Lindsey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,933
- Issue date Jan 28, 2025
- Kabushiki Kaisha Toshiba
- Takuo Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming buried field plate st...
- Patent number 12,199,154
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for separating different transistor regions on...
- Patent number 12,199,102
- Issue date Jan 14, 2025
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide-semiconductor devices with an air gap
- Patent number 12,191,351
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a current spreading region
- Patent number 12,191,385
- Issue date Jan 7, 2025
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate drive circuit and drive method for power semiconductor device
- Patent number 12,184,268
- Issue date Dec 31, 2024
- Innovision Semiconductor Inc.
- Feng Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,663
- Issue date Dec 31, 2024
- Rohm Co., Ltd.
- Kazuki Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,820
- Issue date Dec 31, 2024
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super barrier rectifier with shielded gate electrode and multiple s...
- Patent number 12,176,397
- Issue date Dec 24, 2024
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that includes at least four semiconductor regions
- Patent number 12,176,418
- Issue date Dec 24, 2024
- Kabushiki Kaisha Toshiba
- Hiroki Nemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-type MOSFET and method for manufacturing the same
- Patent number 12,176,432
- Issue date Dec 24, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation regions for charge collection and removal
- Patent number 12,159,910
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili Raghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,981
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,119,385
- Issue date Oct 15, 2024
- Kabushiki Kaisha Toshiba
- Hiro Gangi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,113,533
- Issue date Oct 8, 2024
- Rohm Co., Ltd.
- Naoki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,159
- Issue date Oct 1, 2024
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,100,743
- Issue date Sep 24, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Ying-Chi Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 12,100,740
- Issue date Sep 24, 2024
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048708
- Publication date Feb 6, 2025
- Kabushiki Kaisha Toshiba
- Taichi FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250040222
- Publication date Jan 30, 2025
- RENESAS ELECTRONICS CORPORATION
- Yu NAGAHAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040223
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Masatsugu YUTANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD
- Publication number 20250040161
- Publication date Jan 30, 2025
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031427
- Publication date Jan 23, 2025
- Industrial Technology Research Institute
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022924
- Publication date Jan 16, 2025
- RENESAS ELECTRONICS CORPORATION
- Keiichi MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022950
- Publication date Jan 16, 2025
- Hyundai Motor Company
- Junghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022952
- Publication date Jan 16, 2025
- Kabushiki Kaisha Toshiba
- Hyuga SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015147
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yuto OMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20250015148
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015176
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF, INTEGRATED CIR...
- Publication number 20250006833
- Publication date Jan 2, 2025
- Huawei Digital Power Technologies Co., Ltd.
- Runtao Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE
- Publication number 20240429289
- Publication date Dec 26, 2024
- Infineon Technologies Austria AG
- Alessandro Ferrara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429295
- Publication date Dec 26, 2024
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Dongpo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429311
- Publication date Dec 26, 2024
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEXFET NGEN3.2 MV DUAL SHIELD OXIDE DAMAGE SOLUTION
- Publication number 20240429290
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ya Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS
- Publication number 20240429293
- Publication date Dec 26, 2024
- Rohm Co., Ltd.
- Kazuki YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421199
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240413240
- Publication date Dec 12, 2024
- Magnachip Semiconductor, Ltd.
- Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE
- Publication number 20240405761
- Publication date Dec 5, 2024
- INNOVISION SEMICONDUCTOR INC
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405081
- Publication date Dec 5, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Ying-Chi Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...
- Publication number 20240405098
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maurizio Gabriele CASTORINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240405121
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Chia-Ming Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240395926
- Publication date Nov 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES
- Publication number 20240395927
- Publication date Nov 28, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240395878
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Yuta NABUCHI
- H01 - BASIC ELECTRIC ELEMENTS

Recessed field plates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including insulated gate bipolar transistor

Semiconductor device

Gate contact structure for a trench power MOSFET with a split gate...

Semiconductor device

Deep trench intersections

Devices, systems, and methods for remote video retrieval

Semiconductor doped region with biased isolated members

Semiconductor device

Semiconductor structure and method of forming buried field plate st...

Isolation structure for separating different transistor regions on...

Laterally-diffused metal-oxide-semiconductor devices with an air gap

Semiconductor device having a current spreading region

Gate drive circuit and drive method for power semiconductor device

Semiconductor device

Semiconductor device

Super barrier rectifier with shielded gate electrode and multiple s...

Semiconductor device that includes at least four semiconductor regions

Trench-type MOSFET and method for manufacturing the same

Trench field effect transistor structure comprising epitaxial layer...

Electronic device including a transistor and a shield electrode

Semiconductor device and manufacturing method thereof

Reverse conducting IGBT with controlled anode injection

Isolation regions for charge collection and removal

Semiconductor device

Semiconductor device having contact trenches extending from opposit...

Field effect transistor

Semiconductor device

Semiconductor device

Semiconductor device and method for forming the same

Threshold voltage adjustment using adaptively biased shield plate

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF, INTEGRATED CIR...

SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE

GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

NEXFET NGEN3.2 MV DUAL SHIELD OXIDE DAMAGE SOLUTION

SEMICONDUCTOR APPARATUS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...

GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...

SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME