Replenishing liquid precursor, other than a moving zone

Industry

CPC
Y10S117/912

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

Current Industry

Y10S117/912Replenishing liquid precursor, other than a moving zone

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for feeding arsenic dopant into a silicon crystal growing ap...
- Patent number 8,696,811
- Issue date Apr 15, 2014
- MEMC Electronic Materials, Inc.
- Massoud Javidi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for feeding arsenic dopant into a silicon crystal...
- Patent number 7,922,817
- Issue date Apr 12, 2011
- MEMC Electronic Materials, Inc.
- Massoud Javidi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing silicon carbide single crystal from disloc...
- Patent number 7,135,074
- Issue date Nov 14, 2006
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of feeding dopant for continuously-charged method and a dopa...
- Patent number 5,866,094
- Issue date Feb 2, 1999
- Komatsu Electronic Metals Co., Ltd.
- Keishi Niikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of feeding a dopant in a continuously charging method
- Patent number 5,700,321
- Issue date Dec 23, 1997
- Komatsu Electronic Metals Co., Ltd.
- Keishi Niikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for growing crystals
- Patent number 5,569,325
- Issue date Oct 29, 1996
- Condea Vista Company
- David A. Barclay
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a crystal by crystal growth in the liquid phase...
- Patent number 5,413,067
- Issue date May 9, 1995
- France Telecom
- Albert Zarka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing silicon single crystals
- Patent number 5,087,429
- Issue date Feb 11, 1992
- NKK Corporation
- Hiroshi Kamio
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing crystals
- Patent number 5,080,873
- Issue date Jan 14, 1992
- Mitsubishi Materials Corporation
- Naoki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of crystal ribbon growth
- Patent number 5,055,157
- Issue date Oct 8, 1991
- Carl E. Bleil
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polysilicon produced by a fluid bed process
- Patent number 4,820,587
- Issue date Apr 11, 1989
- Ethyl Corporation
- Marcelian F. Gautreaux
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method and apparatus for zone regrowth of crystal ribbons from bulk...
- Patent number 4,775,443
- Issue date Oct 4, 1988
- Carl E. Bleil
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing single crystal binary metal oxides of improve...
- Patent number 4,724,038
- Issue date Feb 9, 1988
- Hughes Aircraft Company
- Ricardo C. Pastor
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxial growth process
- Patent number 4,578,126
- Issue date Mar 25, 1986
- TRW Inc.
- Edward A. Rezek
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlled doping of silicon crystals by improved float...
- Patent number 4,556,448
- Issue date Dec 3, 1985
- International Business Machines Corporation
- Kyong M. Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxial growth method
- Patent number 4,498,937
- Issue date Feb 12, 1985
- Fujitsu Limited
- Shoji Isozumi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing thin epitaxial layers of a non-linear, optically...
- Patent number 4,001,076
- Issue date Jan 4, 1977
- GTE Laboratories Incorporated
- Lawrence B. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy
- Patent number 3,933,123
- Issue date Jan 20, 1976
- U.S. Philips Corporation
- Elie Andre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for production of liquid phase epitaxial layer...
- Patent number 3,933,538
- Issue date Jan 20, 1976
- Sumitomo Electric Industries, Ltd.
- Shin-ichi Akai
- C30 - CRYSTAL GROWTH
Information Patent Grant
3781209
- Patent number 3,781,209
- Issue date Dec 25, 1973
- C30 - CRYSTAL GROWTH
Information Patent Grant
3658598
- Patent number 3,658,598
- Issue date Apr 25, 1972
- C30 - CRYSTAL GROWTH
Information Patent Grant
3632431
- Patent number 3,632,431
- Issue date Jan 4, 1972
- C30 - CRYSTAL GROWTH
Information Patent Grant
3622282
- Patent number 3,622,282
- Issue date Nov 23, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3594132
- Patent number 3,594,132
- Issue date Jul 20, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3573190
- Patent number 3,573,190
- Issue date Mar 30, 1971
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
3561931
- Patent number 3,561,931
- Issue date Feb 9, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3539305
- Patent number 3,539,305
- Issue date Nov 10, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3480535
- Patent number 3,480,535
- Issue date Nov 25, 1969
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
3477811
- Patent number 3,477,811
- Issue date Nov 11, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3454367
- Patent number 3,454,367
- Issue date Jul 8, 1969
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING AP...
- Publication number 20100132829
- Publication date Jun 3, 2010
- MEMC Electronic Materials, Inc.
- Massoud Javidi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL...
- Publication number 20090266294
- Publication date Oct 29, 2009
- MEMC Electronic Materials, Inc.
- Massoud Javidi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL FROM DISLOC...
- Publication number 20050211156
- Publication date Sep 29, 2005
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH

Replenishing liquid precursor, other than a moving zone

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for feeding arsenic dopant into a silicon crystal growing ap...

Method and device for feeding arsenic dopant into a silicon crystal...

Method for manufacturing silicon carbide single crystal from disloc...

Method of feeding dopant for continuously-charged method and a dopa...

Method of feeding a dopant in a continuously charging method

Process for growing crystals

Method of obtaining a crystal by crystal growth in the liquid phase...

Method and apparatus for manufacturing silicon single crystals

Apparatus for growing crystals

Method of crystal ribbon growth

Polysilicon produced by a fluid bed process

Method and apparatus for zone regrowth of crystal ribbons from bulk...

Process for preparing single crystal binary metal oxides of improve...

Liquid phase epitaxial growth process

Method for controlled doping of silicon crystals by improved float...

Liquid phase epitaxial growth method

Method for growing thin epitaxial layers of a non-linear, optically...

Liquid phase epitaxy

Method and apparatus for production of liquid phase epitaxial layer...

3781209

3658598

3632431

3622282

3594132

3573190

3561931

3539305

3480535

3477811

3454367

Patents Applicationslast 30 patents

METHOD FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING AP...

METHOD AND DEVICE FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL FROM DISLOC...