Resistive cell structure aspects

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

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G11C2213/50Resistive cell structure aspects

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Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,963,465
- Issue date Apr 16, 2024
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated reactive material erasure element with phase change memory
- Patent number 11,257,866
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device structure including tilted sidewall and method for fa...
- Patent number 11,233,196
- Issue date Jan 25, 2022
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,018,295
- Issue date May 25, 2021
- Hefei Reliance Memory Limited
- Zhichao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable resistive element
- Patent number 10,957,854
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Jean Fompeyrine
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional phase change memory device having a laterally con...
- Patent number 10,580,976
- Issue date Mar 3, 2020
- SanDisk Technologies LLC
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated reactive material erasure element with phase change memory
- Patent number 10,535,713
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunable resistive element
- Patent number 10,516,108
- Issue date Dec 24, 2019
- International Business Machines Corporation
- Jean Fompeyrine
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory elements having conductive cap layers and methods therefor
- Patent number 10,497,868
- Issue date Dec 3, 2019
- Adesto Technologies Corporation
- John Ross Jameson
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with programmable non-volatile resistive switch...
- Patent number 10,447,275
- Issue date Oct 15, 2019
- Intel Corporation
- Andy L. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Tunable resistive element
- Patent number 10,312,441
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Jean Fompeyrine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional oblique two-terminal memory with enhanced electri...
- Patent number 9,627,443
- Issue date Apr 18, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for thermoelectric heat confinement
- Patent number 9,548,110
- Issue date Jan 17, 2017
- International Business Machines Corporation
- Aravinthan Athmanathan
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory apparatus, manufacturing method thereof
- Patent number 9,478,281
- Issue date Oct 25, 2016
- SK Hynix Inc.
- Min Seok Son
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cells
- Patent number 9,293,199
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Daniel Krebs
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20240224821
- Publication date Jul 4, 2024
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20230225227
- Publication date Jul 13, 2023
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED REACTIVE MATERIAL ERASURE ELEMENT WITH PHASE CHANGE MEMORY
- Publication number 20210257410
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20210234093
- Publication date Jul 29, 2021
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
TUNABLE RESISTIVE ELEMENT
- Publication number 20200028079
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Jean Fompeyrine
- G11 - INFORMATION STORAGE
Information Patent Application
TUNABLE RESISTIVE ELEMENT
- Publication number 20190312199
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Jean Fompeyrine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, METHOD OF FORMING THE SAME, METHOD FOR CONTROLLING T...
- Publication number 20190272874
- Publication date Sep 5, 2019
- Nanyang Technological University
- Putu Andhita Dananjaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH PROGRAMMABLE NON-VOLATILE RESISTIVE SWITCH...
- Publication number 20190020344
- Publication date Jan 17, 2019
- Intel Corporation
- Andy L. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE-CHANGE MEMORY CELLS
- Publication number 20140369113
- Publication date Dec 18, 2014
- Daniel Krebs
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL OBLIQUE TWO-TERMINAL MEMORY WITH ENHANCED ELECTRI...
- Publication number 20140312296
- Publication date Oct 23, 2014
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE

Resistive cell structure aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Non-volatile memory structure with positioned doping

Non-volatile memory structure with positioned doping

Integrated reactive material erasure element with phase change memory

Memory device structure including tilted sidewall and method for fa...

Non-volatile memory structure with positioned doping

Tunable resistive element

Three-dimensional phase change memory device having a laterally con...

Integrated reactive material erasure element with phase change memory

Tunable resistive element

Memory elements having conductive cap layers and methods therefor

Integrated circuits with programmable non-volatile resistive switch...

Tunable resistive element

Three-dimensional oblique two-terminal memory with enhanced electri...

Memory device and method for thermoelectric heat confinement

Variable resistance memory apparatus, manufacturing method thereof

Phase-change memory cells

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

INTEGRATED REACTIVE MATERIAL ERASURE ELEMENT WITH PHASE CHANGE MEMORY

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

TUNABLE RESISTIVE ELEMENT

TUNABLE RESISTIVE ELEMENT

MEMORY DEVICE, METHOD OF FORMING THE SAME, METHOD FOR CONTROLLING T...

INTEGRATED CIRCUITS WITH PROGRAMMABLE NON-VOLATILE RESISTIVE SWITCH...

PHASE-CHANGE MEMORY CELLS

THREE-DIMENSIONAL OBLIQUE TWO-TERMINAL MEMORY WITH ENHANCED ELECTRI...