Resistive materials for field effect devices

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H01L29/435

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/435Resistive materials for field effect devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,973,016
- Issue date Apr 30, 2024
- Infineon Technologies Austria AG
- Elvir Kahrimanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise and high-performance field effect transistors of 2-dimens...
- Patent number 11,967,629
- Issue date Apr 23, 2024
- Kansas State University Research Foundation
- Suprem R. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices having a silicided polysi...
- Patent number 11,923,446
- Issue date Mar 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metallization structure
- Patent number 11,876,041
- Issue date Jan 16, 2024
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high voltage resistor with voltage sense
- Patent number 11,869,934
- Issue date Jan 9, 2024
- Silanna Asia Pte Ltd
- Wen Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 11,784,580
- Issue date Oct 10, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor array substrate and electronic device includin...
- Patent number 11,735,638
- Issue date Aug 22, 2023
- LG Display Co., Ltd.
- Dohyung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 11,735,477
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trenches with different depths
- Patent number 11,682,579
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 11,581,409
- Issue date Feb 14, 2023
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 11,509,240
- Issue date Nov 22, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,495,597
- Issue date Nov 8, 2022
- Samsung Electronics Co., Ltd.
- Moon-Kyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a varying gate runner resistivity per area
- Patent number 11,417,747
- Issue date Aug 16, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trenches with different depths
- Patent number 11,348,830
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,239,147
- Issue date Feb 1, 2022
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplifier having switch and switch control processor controlling sw...
- Patent number 11,227,930
- Issue date Jan 18, 2022
- Samsung Electronics Co., Ltd.
- Sangmin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplifier having switch and switch control processor controlling sw...
- Patent number 11,201,226
- Issue date Dec 14, 2021
- Samsung Electronics Co., Ltd.
- Sangmin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal replacement gate electrode for short channel devices
- Patent number 11,195,929
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,158,713
- Issue date Oct 26, 2021
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device
- Patent number 11,158,707
- Issue date Oct 26, 2021
- Infineon Technologies AG
- Hanno Melzner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,145,730
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET integrated with super barrier rectifier
- Patent number 11,114,558
- Issue date Sep 7, 2021
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,043,557
- Issue date Jun 22, 2021
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in a level shifter with electrostatic discharg...
- Patent number 11,043,483
- Issue date Jun 22, 2021
- MagnaChip Semiconductor, Ltd.
- Kyong Jin Hwang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Switching device
- Patent number 11,005,387
- Issue date May 11, 2021
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,991,808
- Issue date Apr 27, 2021
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 10,957,771
- Issue date Mar 23, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,957,773
- Issue date Mar 23, 2021
- Kabushiki Kaisha Toshiba
- Kenichi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor cell
- Patent number 10,930,737
- Issue date Feb 23, 2021
- VISIC TECHNOLOGIES LTD.
- Gregory Bunin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,872,962
- Issue date Dec 22, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20240038882
- Publication date Feb 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240038868
- Publication date Feb 1, 2024
- DENSO CORPORATION
- RYOTA MIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20240038881
- Publication date Feb 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20230421073
- Publication date Dec 28, 2023
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin Film Transistor Array Substrate and Electronic Device Includin...
- Publication number 20230361189
- Publication date Nov 9, 2023
- LG Display Co., Ltd.
- Dohyung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL ASSEMBLY
- Publication number 20230194627
- Publication date Jun 22, 2023
- LEAR CORPORATION
- Ignacio Molinero Horno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20230124962
- Publication date Apr 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20230027268
- Publication date Jan 26, 2023
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Trenches with Different Depths
- Publication number 20220293461
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM
- Publication number 20220285543
- Publication date Sep 8, 2022
- FLOSFIA INC.
- Masahiro SUGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-CONDUCTION SILICON CARBIDE MOSFET DEVICE HAVING IMPROVED G...
- Publication number 20220262913
- Publication date Aug 18, 2022
- STMicroelectronics S.r.l.
- Mario Giuseppe SAGGIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin Film Transistor Array Substrate and Electronic Device Includin...
- Publication number 20220123120
- Publication date Apr 21, 2022
- LG Display Co., Ltd.
- Dohyung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A METALLIZATION STRUCTURE
- Publication number 20220115314
- Publication date Apr 14, 2022
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-High Voltage Resistor with Voltage Sense
- Publication number 20220045163
- Publication date Feb 10, 2022
- Wen Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor
- Publication number 20210336025
- Publication date Oct 28, 2021
- Ampleon Netherlands B.V.
- Johannes Adrianus Maria De Boet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT FOR THE MULTIPLEXING AND READ-OUT OF VARIABLE-RESISTANCE SE...
- Publication number 20210321053
- Publication date Oct 14, 2021
- Consejo Superior de Investigaciones Cientificas (CSIC)
- Anton GUIMERÀ BRUNET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW NOISE AND HIGH-PERFORMANCE FIELD EFFECT TRANSISTORS OF 2-DIMENS...
- Publication number 20210280685
- Publication date Sep 9, 2021
- Kansas State University Research Foundation
- Suprem R. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE IN A LEVEL SHIFTER WITH ELECTROSTATIC DISCHARG...
- Publication number 20210265337
- Publication date Aug 26, 2021
- Magnachip Semiconductor, Ltd.
- Kyong Jin HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20210234472
- Publication date Jul 29, 2021
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Field Electrode that Includes Two Layers
- Publication number 20210167175
- Publication date Jun 3, 2021
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA
- Publication number 20210119006
- Publication date Apr 22, 2021
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20210118992
- Publication date Apr 22, 2021
- INFINEON TECHNOLOGIES AG
- Hanno Melzner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Trenches with Different Depths
- Publication number 20210090943
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210074824
- Publication date Mar 11, 2021
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MATSUSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20210020631
- Publication date Jan 21, 2021
- Samsung Electronics Co., Ltd.
- Moon-Kyu PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20210005543
- Publication date Jan 7, 2021
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200411643
- Publication date Dec 31, 2020
- Fuji Electric Co., Ltd.
- Yasuyuki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULARIZED INEXPENSIVE DETECTION OF CEREBRAL SPINAL FLUID FOR MEDI...
- Publication number 20200333286
- Publication date Oct 22, 2020
- University of Florida Research Foundation, Inc.
- Marino Leon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Semiconductor Integrated Circuit Fabrication
- Publication number 20200286782
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Field Electrode that Includes Two Layers
- Publication number 20200273956
- Publication date Aug 27, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS

Resistive materials for field effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Low noise and high-performance field effect transistors of 2-dimens...

High electron mobility transistor devices having a silicided polysi...

Semiconductor device having a metallization structure

Ultra-high voltage resistor with voltage sense

Switching device

Thin film transistor array substrate and electronic device includin...

Method of semiconductor integrated circuit fabrication

Method of forming trenches with different depths

Transistor device with a field electrode that includes two layers

Switching device

Semiconductor devices and methods of fabricating the same

Transistor device with a varying gate runner resistivity per area

Method of forming trenches with different depths

Semiconductor device

Amplifier having switch and switch control processor controlling sw...

Amplifier having switch and switch control processor controlling sw...

Conformal replacement gate electrode for short channel devices

Semiconductor device

Transistor device

Semiconductor device and method for manufacturing the same

Shielded gate trench MOSFET integrated with super barrier rectifier

Semiconductor device

Semiconductor device in a level shifter with electrostatic discharg...

Switching device

Steep-switch field effect transistor with integrated bi-stable resi...

Transistor device with a field electrode that includes two layers

Semiconductor device

Transistor cell

Steep-switch field effect transistor with integrated bi-stable resi...

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

SWITCHING DEVICE

Thin Film Transistor Array Substrate and Electronic Device Includin...

ELECTRICAL ASSEMBLY

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

SWITCHING DEVICE

Method of Forming Trenches with Different Depths

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM

VERTICAL-CONDUCTION SILICON CARBIDE MOSFET DEVICE HAVING IMPROVED G...

Thin Film Transistor Array Substrate and Electronic Device Includin...

SEMICONDUCTOR DEVICE HAVING A METALLIZATION STRUCTURE

Ultra-High Voltage Resistor with Voltage Sense

Field-Effect Transistor

CIRCUIT FOR THE MULTIPLEXING AND READ-OUT OF VARIABLE-RESISTANCE SE...

LOW NOISE AND HIGH-PERFORMANCE FIELD EFFECT TRANSISTORS OF 2-DIMENS...

SEMICONDUCTOR DEVICE IN A LEVEL SHIFTER WITH ELECTROSTATIC DISCHARG...

SWITCHING DEVICE

Transistor Device with a Field Electrode that Includes Two Layers

TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA

TRANSISTOR DEVICE

Method of Forming Trenches with Different Depths

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Semiconductor Device

SEMICONDUCTOR DEVICE

MODULARIZED INEXPENSIVE DETECTION OF CEREBRAL SPINAL FLUID FOR MEDI...

Method of Semiconductor Integrated Circuit Fabrication

Transistor Device with a Field Electrode that Includes Two Layers