Schottky diodes

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H01L29/66143

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66143Schottky diodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing merged PiN Schottky (MPS) diode
- Patent number 12,191,403
- Issue date Jan 7, 2025
- LEAP Semiconductor Corp.
- Wei-Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device and method for making the same
- Patent number 12,191,376
- Issue date Jan 7, 2025
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode and method for fabricating the same
- Patent number 12,136,676
- Issue date Nov 5, 2024
- POWERCUBE SEMI INC.
- You Seung Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged PiN Schottky (MPS) diode with plasma spreading layer and man...
- Patent number 12,125,924
- Issue date Oct 22, 2024
- Xiaotian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode and method of fabrication thereof
- Patent number 12,107,136
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Shun Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide diode with reduced voltage drop, and manufacturing...
- Patent number 12,094,933
- Issue date Sep 17, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MPS diode with reduced current-crowding effect and ma...
- Patent number 12,094,985
- Issue date Sep 17, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,062,726
- Issue date Aug 13, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a junction portion contacting a Schottk...
- Patent number 12,057,479
- Issue date Aug 6, 2024
- Rohm Co., Ltd.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping activation and ohmic contact formation in a SiC electronic d...
- Patent number 12,051,725
- Issue date Jul 30, 2024
- STMicroelectronics S.r.l.
- Simone Rascuná
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with embedded Schottky diode and manufacturing...
- Patent number 12,002,892
- Issue date Jun 4, 2024
- Alpha Power Solutions Limited
- Wing Kit Cheung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged PiN Schottky (MPS) diode and method of manufacturing the same
- Patent number 11,990,553
- Issue date May 21, 2024
- LEAP Semiconductor Corp.
- Wei-Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode with reduced leakage current and method of f...
- Patent number 11,984,490
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electrical contact
- Patent number 11,978,780
- Issue date May 7, 2024
- Nexperia B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface damage control in diodes
- Patent number 11,973,148
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectifier circuit and power reception control device
- Patent number 11,967,903
- Issue date Apr 23, 2024
- Seiko Epson Corporation
- Kinya Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power diode device and fabrication method thereof
- Patent number 11,967,651
- Issue date Apr 23, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super CMOS devices on a microelectronics system
- Patent number 11,955,476
- Issue date Apr 9, 2024
- SCHOTTKY LSI, INC.
- Augustine Wei-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor electronic device having a junction-bar...
- Patent number 11,949,025
- Issue date Apr 2, 2024
- STMicroelectronics S.r.l.
- Simone Rascuná
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,942,560
- Issue date Mar 26, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,929,400
- Issue date Mar 12, 2024
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral Schottky diode
- Patent number 11,923,462
- Issue date Mar 5, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming diodes
- Patent number 11,916,129
- Issue date Feb 27, 2024
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned field plate mesa FPM SiC schottky barrier diode
- Patent number 11,888,037
- Issue date Jan 30, 2024
- HITACHI ENERGY LTD
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device including lateral insulated gate bipolar transistor (L...
- Patent number 11,876,093
- Issue date Jan 16, 2024
- Richtek Technology Corporation
- Chih-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable MPS device based on SiC
- Patent number 11,869,944
- Issue date Jan 9, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for high voltage applications
- Patent number 11,862,673
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kwangsik Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,854,809
- Issue date Dec 26, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20250006849
- Publication date Jan 2, 2025
- ROHM CO., LTD.
- Ryo YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240387751
- Publication date Nov 21, 2024
- ROHM CO., LTD.
- Akira SAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF
- Publication number 20240379808
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Shun LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20240379880
- Publication date Nov 14, 2024
- Shindengen Electric Manufacturing Co., Ltd.
- Masaki HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-N JUNCTION DIODE
- Publication number 20240379881
- Publication date Nov 14, 2024
- TAMURA CORPORATION
- Akio TAKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240372012
- Publication date Nov 7, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...
- Publication number 20240355938
- Publication date Oct 24, 2024
- II-VI Delaware, Inc.
- Shuoben Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...
- Publication number 20240355886
- Publication date Oct 24, 2024
- ROHM CO., LTD.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
- Publication number 20240332285
- Publication date Oct 3, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PROCESSES FOR MAKING SAME
- Publication number 20240290783
- Publication date Aug 29, 2024
- DIODES INCORPORATED
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20240282865
- Publication date Aug 22, 2024
- Invinci Semiconductor Corporation
- Li-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240274726
- Publication date Aug 15, 2024
- Vanguard International Semiconductor Corporation
- Chen-Dong TZOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...
- Publication number 20240258402
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-HAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF
- Publication number 20240258439
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE DAMAGE CONTROL IN DIODES
- Publication number 20240234589
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MERGED PiN SCHOTTKY (MPS) DIODE
- Publication number 20240234590
- Publication date Jul 11, 2024
- LEAP Semiconductor Corp.
- Wei-Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE HAVING A JUNCTION-BAR...
- Publication number 20240186424
- Publication date Jun 6, 2024
- STMicroelectronics S.r.l.
- Simone RASCUNÁ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE MPS DEVICE BASED ON SIC
- Publication number 20240178280
- Publication date May 30, 2024
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20240162040
- Publication date May 16, 2024
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240162327
- Publication date May 16, 2024
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Zhigao PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF CIRCUITRY INCLUDING PLANAR DIODE
- Publication number 20240145574
- Publication date May 2, 2024
- Space Power Technologies Inc.
- Shinji NOZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120423
- Publication date Apr 11, 2024
- WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.
- TETSUYA OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUN...
- Publication number 20240105857
- Publication date Mar 28, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240097047
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFA...
- Publication number 20240097046
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACT...
- Publication number 20240097049
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACT...
- Publication number 20240097048
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240079469
- Publication date Mar 7, 2024
- ROHM CO., LTD.
- Masaya UENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
- Publication number 20240072178
- Publication date Feb 29, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS

Schottky diodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing merged PiN Schottky (MPS) diode

Power device and method for making the same

Schottky diode and method for fabricating the same

Merged PiN Schottky (MPS) diode with plasma spreading layer and man...

Schottky diode and method of fabrication thereof

Silicon carbide diode with reduced voltage drop, and manufacturing...

Semiconductor MPS diode with reduced current-crowding effect and ma...

Semiconductor device

Semiconductor device having a junction portion contacting a Schottk...

Doping activation and ohmic contact formation in a SiC electronic d...

Semiconductor device with embedded Schottky diode and manufacturing...

Merged PiN Schottky (MPS) diode and method of manufacturing the same

Schottky barrier diode with reduced leakage current and method of f...

Semiconductor device and electrical contact

Surface damage control in diodes

Rectifier circuit and power reception control device

Silicon carbide power diode device and fabrication method thereof

Super CMOS devices on a microelectronics system

Manufacturable thin film gallium and nitrogen containing devices

Manufacturable thin film gallium and nitrogen containing devices

Wide band gap semiconductor electronic device having a junction-bar...

Semiconductor device structures and methods of manufacturing the same

Silicon carbide semiconductor device and method of manufacturing si...

Lateral Schottky diode

Methods of forming diodes

Self-aligned field plate mesa FPM SiC schottky barrier diode

Power device including lateral insulated gate bipolar transistor (L...

Scalable MPS device based on SiC

Device for high voltage applications

Manufacturing method of a semiconductor device with efficient edge...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF

SCHOTTKY BARRIER DIODE

P-N JUNCTION DIODE

SEMICONDUCTOR DEVICE

Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...

SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...

CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL

SEMICONDUCTOR DEVICE AND PROCESSES FOR MAKING SAME

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...

SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF

SURFACE DAMAGE CONTROL IN DIODES

METHOD OF MANUFACTURING MERGED PiN SCHOTTKY (MPS) DIODE

WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE HAVING A JUNCTION-BAR...

SCALABLE MPS DEVICE BASED ON SIC

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

MANUFACTURING METHOD OF CIRCUITRY INCLUDING PLANAR DIODE

SEMICONDUCTOR DEVICE

HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUN...

MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME

MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFA...

MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACT...

MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE