Schottky electrodes

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CPC
H01L21/0495

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0495Schottky electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a junction portion contacting a Schottk...
- Patent number 12,057,479
- Issue date Aug 6, 2024
- Rohm Co., Ltd.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing semiconductor device,...
- Patent number 11,901,430
- Issue date Feb 13, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon carbide semiconductor component
- Patent number 11,855,147
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,854,809
- Issue date Dec 26, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a sic electronic device with reduced handl...
- Patent number 11,784,049
- Issue date Oct 10, 2023
- STMicroelectronics S.r.l.
- Simone Rascuna'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,769,841
- Issue date Sep 26, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,646,382
- Issue date May 9, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a junction portion contacting a Schottk...
- Patent number 11,610,970
- Issue date Mar 21, 2023
- Rohm Co., Ltd.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,545,362
- Issue date Jan 3, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing semiconductor device,...
- Patent number 11,532,721
- Issue date Dec 20, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,527,634
- Issue date Dec 13, 2022
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 11,411,093
- Issue date Aug 9, 2022
- Fuji Electric Co., Ltd.
- Takahito Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,309,438
- Issue date Apr 19, 2022
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,271,118
- Issue date Mar 8, 2022
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,264,240
- Issue date Mar 1, 2022
- Fuji Electric Co., Ltd.
- Kenichi Iguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,164,953
- Issue date Nov 2, 2021
- TDK Corporation
- Jun Hirabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide trench schottky barrier diode using polysilicon and...
- Patent number 11,121,265
- Issue date Sep 14, 2021
- KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE
- O Gyun Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component comprising trench gate stru...
- Patent number 11,043,560
- Issue date Jun 22, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a gate electrode formed...
- Patent number 11,031,494
- Issue date Jun 8, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,018,008
- Issue date May 25, 2021
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a junction portion contacting a Schottk...
- Patent number 11,004,939
- Issue date May 11, 2021
- Rohm Co., Ltd.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance SiC Schottky diodes
- Patent number 10,840,385
- Issue date Nov 17, 2020
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,832,911
- Issue date Nov 10, 2020
- Toyoda Gosei Co., Ltd.
- Nariaki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with horizontal and vertical c...
- Patent number 10,790,386
- Issue date Sep 29, 2020
- Hitachi, Ltd.
- Yuan Bu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method for manufacturing a semiconductor device having a Schottky c...
- Patent number 10,763,339
- Issue date Sep 1, 2020
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas sensors with contact pads
- Patent number 10,732,161
- Issue date Aug 4, 2020
- United States of America as represented by the Administrator of National Aero...
- Jennifer Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 10,734,515
- Issue date Aug 4, 2020
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor apparatus and semiconductor a...
- Patent number 10,720,329
- Issue date Jul 21, 2020
- Denso Corporation
- Shuhei Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low turn-on voltage silicon carbide rectifiers
- Patent number 10,707,340
- Issue date Jul 7, 2020
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240413207
- Publication date Dec 12, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS
- Publication number 20240355897
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Neal Oldham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...
- Publication number 20240355886
- Publication date Oct 24, 2024
- ROHM CO., LTD.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20240162040
- Publication date May 16, 2024
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20240021737
- Publication date Jan 18, 2024
- Fuji Electric Co., Ltd.
- Yuichi HASHIZUME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SIC ELECTRONIC DEVICE WITH REDUCED HANDL...
- Publication number 20230411158
- Publication date Dec 21, 2023
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF TRENCH-TYPE POWER DEVICE
- Publication number 20230215931
- Publication date Jul 6, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Xiao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230197791
- Publication date Jun 22, 2023
- ROHM CO., LTD.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230103850
- Publication date Apr 6, 2023
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Shouhei KITAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20230099610
- Publication date Mar 30, 2023
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20230079954
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE GAP...
- Publication number 20230042772
- Publication date Feb 9, 2023
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20230021015
- Publication date Jan 19, 2023
- Taipei ANJET Corporation
- Nobuo MACHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MANUFACTURING A VERTICAL CONDUCTION SILICON CARBIDE ELE...
- Publication number 20220415655
- Publication date Dec 29, 2022
- STMicroelectronics S.r.l
- Paolo BADALA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220406948
- Publication date Dec 22, 2022
- Fuji Electric Co., Ltd.
- Yuichi HASHIZUME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20220367731
- Publication date Nov 17, 2022
- Taipei ANJET Corporation
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220336598
- Publication date Oct 20, 2022
- Rohm Co., Ltd.
- Takaaki YAMANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Devices with Shielding Structure
- Publication number 20220199766
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20210391437
- Publication date Dec 16, 2021
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20210359098
- Publication date Nov 18, 2021
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Man...
- Publication number 20210328078
- Publication date Oct 21, 2021
- AZ Power, Inc
- Xiaotian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manu...
- Publication number 20210328077
- Publication date Oct 21, 2021
- AZ Power, Inc
- Xiaotian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SIC ELECTRONIC DEVICE WITH REDUCED HANDL...
- Publication number 20210280424
- Publication date Sep 9, 2021
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20210249268
- Publication date Aug 12, 2021
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...
- Publication number 20210234006
- Publication date Jul 29, 2021
- ROHM CO., LTD.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20210226031
- Publication date Jul 22, 2021
- Fuji Electric Co., Ltd.
- Takahito KOJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20210175369
- Publication date Jun 10, 2021
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20210074863
- Publication date Mar 11, 2021
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMI...
- Publication number 20200312967
- Publication date Oct 1, 2020
- AZ Power, Inc
- ZHENG ZUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a juntion portion contacting a schottky...
- Publication number 20200176572
- Publication date Jun 4, 2020
- ROHM CO., LTD.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS

Schottky electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC devices with shielding structure

Semiconductor device having a junction portion contacting a Schottk...

Semiconductor device, method of manufacturing semiconductor device,...

Method for producing a silicon carbide semiconductor component

Manufacturing method of a semiconductor device with efficient edge...

Method for manufacturing a sic electronic device with reduced handl...

Junction barrier Schottky diode device and method for fabricating t...

Junction barrier Schottky diode device and method for fabricating t...

Semiconductor device having a junction portion contacting a Schottk...

Manufacturing method of a semiconductor device with efficient edge...

Semiconductor device, method of manufacturing semiconductor device,...

Silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device

Silicon carbide trench schottky barrier diode using polysilicon and...

Silicon carbide semiconductor component comprising trench gate stru...

Silicon carbide semiconductor device having a gate electrode formed...

Manufacturing method of a semiconductor device with efficient edge...

Semiconductor device having a junction portion contacting a Schottk...

Performance SiC Schottky diodes

Semiconductor device

Silicon carbide semiconductor device with horizontal and vertical c...

Method for manufacturing a semiconductor device having a Schottky c...

Gas sensors with contact pads

Silicon carbide semiconductor device and manufacturing method therefor

Method of manufacturing semiconductor apparatus and semiconductor a...

Low turn-on voltage silicon carbide rectifiers

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS

SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METHOD FOR MANUFACTURING A SIC ELECTRONIC DEVICE WITH REDUCED HANDL...

MANUFACTURING METHOD OF TRENCH-TYPE POWER DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE GAP...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

PROCESS FOR MANUFACTURING A VERTICAL CONDUCTION SILICON CARBIDE ELE...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

SEMICONDUCTOR DEVICE

SiC Devices with Shielding Structure

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Man...

Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manu...

METHOD FOR MANUFACTURING A SIC ELECTRONIC DEVICE WITH REDUCED HANDL...

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMI...

Semiconductor device having a juntion portion contacting a schottky...