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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0886Shape

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with lateral transistor
- Patent number 12,125,906
- Issue date Oct 22, 2024
- Denso Corporation
- Shinichiro Yanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistor device
- Patent number 11,948,973
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with high voltage device
- Patent number 11,942,543
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,901,447
- Issue date Feb 13, 2024
- JOULWATT TECHNOLOGY CO., LTD.
- Guangtao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including gradually varying composition cha...
- Patent number 11,888,059
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Injun Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...
- Patent number 11,862,675
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Karthick Murukesan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method of high...
- Patent number 11,791,409
- Issue date Oct 17, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor structure with hump-free effect
- Patent number 11,705,514
- Issue date Jul 18, 2023
- Mediatek Inc.
- Cheng Hua Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including source/drain regions having antimon...
- Patent number 11,682,698
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Junghan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,670,678
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistors on multi-layered substrates
- Patent number 11,658,240
- Issue date May 23, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,652,169
- Issue date May 16, 2023
- JOULWATT TECHNOLOGY CO., LTD.
- Guangtao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor and method of fabricating the same
- Patent number 11,631,616
- Issue date Apr 18, 2023
- KEY FOUNDRY CO., LTD.
- Young Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a super junction structure and method o...
- Patent number 11,588,016
- Issue date Feb 21, 2023
- Semiconductor Components Industries, LLC
- Jae-gil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method of high...
- Patent number 11,581,434
- Issue date Feb 14, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and method of fabrication
- Patent number 11,522,081
- Issue date Dec 6, 2022
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming super-junction corner and termination structure...
- Patent number 11,508,819
- Issue date Nov 22, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,476,360
- Issue date Oct 18, 2022
- Denso Corporation
- Yasuhiro Ebihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with high voltage device
- Patent number 11,424,359
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device and method of forming the same
- Patent number 11,398,552
- Issue date Jul 26, 2022
- Vanguard International Semiconductor Corporation
- Wen-Hsin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 11,373,872
- Issue date Jun 28, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based semiconductor device and manufacturing method...
- Patent number 11,257,676
- Issue date Feb 22, 2022
- Fuji Electric Co., Ltd.
- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor arrangement and method of producing thereof
- Patent number 11,245,002
- Issue date Feb 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...
- Patent number 11,145,713
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Karthick Murukesan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around fin device
- Patent number 11,141,902
- Issue date Oct 12, 2021
- International Business Machines Corporation
- John B. Campi
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Field-effect transistors with dual thickness gate dielectrics
- Patent number 11,145,732
- Issue date Oct 12, 2021
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a super junction structure and method o...
- Patent number 11,133,379
- Issue date Sep 28, 2021
- Semiconductor Components Industries, LLC
- Jae-gil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around fin device
- Patent number 11,130,270
- Issue date Sep 28, 2021
- International Business Machines Corporation
- John B. Campi
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
High voltage PMOS (HVPMOS) transistor with a composite drift region...
- Patent number 11,133,413
- Issue date Sep 28, 2021
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Chenggong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method of high...
- Patent number 11,121,253
- Issue date Sep 14, 2021
- KEY FOUNDRY CO., LTD.
- Jin Seong Chung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE
- Publication number 20240250123
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240204062
- Publication date Jun 20, 2024
- Rohm Co., Ltd.
- Chikara TERADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...
- Publication number 20240170558
- Publication date May 23, 2024
- Rohm Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20230411519
- Publication date Dec 21, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20230387309
- Publication date Nov 30, 2023
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FIELD EFFECT TRANSISTOR
- Publication number 20230378265
- Publication date Nov 23, 2023
- Murata Manufacturing Co., Ltd.
- Hiroki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20230261053
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230207691
- Publication date Jun 29, 2023
- Joulwatt Technology Co., Ltd.
- GUANGTAO HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD O...
- Publication number 20230197775
- Publication date Jun 22, 2023
- Semiconductor Components Industries, LLC
- Jae-gil LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20230145810
- Publication date May 11, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230045793
- Publication date Feb 16, 2023
- Rohm Co., Ltd.
- Takeshi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH VOLTAGE DEVICE
- Publication number 20220336659
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220320289
- Publication date Oct 6, 2022
- Vanguard International Semiconductor Corporation
- Wen-Hsin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...
- Publication number 20220277960
- Publication date Sep 1, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE
- Publication number 20220238651
- Publication date Jul 28, 2022
- RENESAS ELECTRONICS CORPORATION
- Yasutaka NAKASHIBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LATERAL TRANSISTOR
- Publication number 20220123142
- Publication date Apr 21, 2022
- DENSO CORPORATION
- SHINICHIRO YANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS ON MULTI-LAYERED SUBSTRATES
- Publication number 20220109069
- Publication date Apr 7, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMON...
- Publication number 20220093739
- Publication date Mar 24, 2022
- Samsung Electronics Co., Ltd.
- Junghan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220069081
- Publication date Mar 3, 2022
- Vanguard International Semiconductor Corporation
- Wen-Hsin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD O...
- Publication number 20220005924
- Publication date Jan 6, 2022
- Semiconductor Components Industries, LLC
- Jae-gil LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE PMOS (HVPMOS) TRANSISTOR WITH A COMPOSITE DRIFT REGION...
- Publication number 20210391463
- Publication date Dec 16, 2021
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Chenggong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate-All-Around Field-Effect Transistor Device
- Publication number 20210376081
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20210376147
- Publication date Dec 2, 2021
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20210367037
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210351295
- Publication date Nov 11, 2021
- Joulwatt Technology Co., Ltd.
- GUANGTAO HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
- Publication number 20210343598
- Publication date Nov 4, 2021
- KEY FOUNDRY CO., LTD.
- Young Bae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING GRADUALLY VARYING COMPOSITION CHA...
- Publication number 20210313465
- Publication date Oct 7, 2021
- Samsung Electronics Co., Ltd.
- Injun Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...
- Publication number 20210257461
- Publication date Aug 19, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DUAL THICKNESS GATE DIELECTRICS
- Publication number 20210167180
- Publication date Jun 3, 2021
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH VOLTAGE DEVICE
- Publication number 20210159334
- Publication date May 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chou Lin
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with lateral transistor

Gate-all-around field-effect transistor device

Semiconductor device structure with high voltage device

Semiconductor device and manufacturing method thereof

Field effect transistor including gradually varying composition cha...

High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...

High voltage semiconductor device and manufacturing method of high...

MOS transistor structure with hump-free effect

Semiconductor devices including source/drain regions having antimon...

Integrated circuit structure

Semiconductor transistors on multi-layered substrates

Semiconductor device and manufacturing method thereof

Semiconductor and method of fabricating the same

Semiconductor device having a super junction structure and method o...

High voltage semiconductor device and manufacturing method of high...

High voltage semiconductor device and method of fabrication

Method for forming super-junction corner and termination structure...

Semiconductor device and method for manufacturing the same

Semiconductor device structure with high voltage device

High-voltage semiconductor device and method of forming the same

Manufacturing method of semiconductor device using gate-through imp...

Gallium nitride based semiconductor device and manufacturing method...

Superjunction transistor arrangement and method of producing thereof

High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...

Gate-all-around fin device

Field-effect transistors with dual thickness gate dielectrics

Semiconductor device having a super junction structure and method o...

Gate-all-around fin device

High voltage PMOS (HVPMOS) transistor with a composite drift region...

High voltage semiconductor device and manufacturing method of high...

Patents Applicationslast 30 patents

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

TRANSISTOR STRUCTURE

STRUCTURE AND FIELD EFFECT TRANSISTOR

INTEGRATED CIRCUIT STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD O...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH VOLTAGE DEVICE

HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE

SEMICONDUCTOR DEVICE WITH LATERAL TRANSISTOR

SEMICONDUCTOR TRANSISTORS ON MULTI-LAYERED SUBSTRATES

SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMON...

HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD O...

HIGH VOLTAGE PMOS (HVPMOS) TRANSISTOR WITH A COMPOSITE DRIFT REGION...

Gate-All-Around Field-Effect Transistor Device

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

INTEGRATED CIRCUIT STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME

FIELD EFFECT TRANSISTOR INCLUDING GRADUALLY VARYING COMPOSITION CHA...

METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...

FIELD-EFFECT TRANSISTORS WITH DUAL THICKNESS GATE DIELECTRICS

SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH VOLTAGE DEVICE