Silicon carbide

Industry

CPC
H01L21/02447

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02447Silicon carbide

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Composite substrate, composite substrate preparation method, semico...
- Patent number 12,369,373
- Issue date Jul 22, 2025
- Huawei Technologies Co., Ltd.
- Bo Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC wafer and manufacturing method thereof
- Patent number 12,363,973
- Issue date Jul 15, 2025
- PROTERIAL, LTD.
- Keisuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal material for air gaps in semiconductor devices
- Patent number 12,324,200
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuen-Shin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices in a layer of epitaxial si...
- Patent number 12,272,738
- Issue date Apr 8, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
CMP process and methods thereof
- Patent number 12,131,911
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,112,985
- Issue date Oct 8, 2024
- GlobalWafers Co., Ltd.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,033,854
- Issue date Jul 9, 2024
- Soitec
- Yann Sinquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,021,144
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Hsien Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,935,951
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method of manufacturing the same
- Patent number 11,887,893
- Issue date Jan 30, 2024
- GlobalWafers Co., Ltd.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processed wafer and method of manufacturing chip formation wafer
- Patent number 11,881,407
- Issue date Jan 23, 2024
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zincblende structure group III-nitride
- Patent number 11,817,315
- Issue date Nov 14, 2023
- Cambridge Enterprise Limited
- David John Wallis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation using silicon carbide diffusion barrie...
- Patent number 11,810,955
- Issue date Nov 7, 2023
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing substrate, method for manufacturing semico...
- Patent number 11,764,059
- Issue date Sep 19, 2023
- Kabushiki Kaisha Toshiba
- Johji Nishio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer manufacturing method and epitaxial wafer
- Patent number RE49657
- Issue date Sep 12, 2023
- Sumco Corporation
- Takuro Iwanaga
Information Patent Grant
Method for manufacturing diamond substrate
- Patent number 11,699,587
- Issue date Jul 11, 2023
- Korea Polytechnic University Industry Academic Cooperation Foundation
- Ok Hyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal material for air gaps in semiconductor devices
- Patent number 11,688,766
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shuen-Shin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene structure and method of forming graphene structure
- Patent number 11,626,282
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Eunkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate, a pellicle film, and a method for...
- Patent number 11,626,283
- Issue date Apr 11, 2023
- Air Water Inc.
- Hidehiko Oku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing p-type 4H-SiC single crystal
- Patent number 11,542,631
- Issue date Jan 3, 2023
- National Institute of Advanced Industrial Science and Technology
- Kazuma Eto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,530,491
- Issue date Dec 20, 2022
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,495,685
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate comprising a SiC layer
- Patent number 11,476,115
- Issue date Oct 18, 2022
- Air Water Inc.
- Mitsuhisa Narukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate including electron transition laye...
- Patent number 11,316,018
- Issue date Apr 26, 2022
- Air Water Inc.
- Mitsuhisa Narukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zincblende structure group III-nitride
- Patent number 11,302,530
- Issue date Apr 12, 2022
- Cambridge Enterprise Limited
- David John Wallis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal material for air gaps in semiconductor devices
- Patent number 11,296,187
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shuen-Shin Liang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20250210416
- Publication date Jun 26, 2025
- Kabushiki Kaisha Toshiba
- Etsuo HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYE...
- Publication number 20250188603
- Publication date Jun 12, 2025
- TOKAI CARBON KOREA CO., LTD.
- JOUNG IL KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of Semiconductor Device Fabrication Involving Porous Silico...
- Publication number 20250194125
- Publication date Jun 12, 2025
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE PRODUCTION OF IMPROVED SIC-SUBSTRATES AND SIC-EPILAYERS
- Publication number 20250113571
- Publication date Apr 3, 2025
- Hitachi Energy Ltd
- Yulieth Cristina ARANGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE
- Publication number 20250022918
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Christian HECHT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
CMP PROCESS AND METHODS THEREOF
- Publication number 20240371649
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATES, SEMICONDUCTOR STRUCTURES, AND METHODS FOR MAN...
- Publication number 20240347601
- Publication date Oct 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240297254
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Hsien TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER
- Publication number 20240222435
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTUR...
- Publication number 20240170284
- Publication date May 23, 2024
- SOITEC
- Gweltaz Gaudin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20240105512
- Publication date Mar 28, 2024
- GLOBALWAFERS CO., LTD.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...
- Publication number 20240021678
- Publication date Jan 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...
- Publication number 20230411151
- Publication date Dec 21, 2023
- SOITEC
- Eric Guiot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...
- Publication number 20230369400
- Publication date Nov 16, 2023
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...
- Publication number 20230369412
- Publication date Nov 16, 2023
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230360909
- Publication date Nov 9, 2023
- GLOBALWAFERS CO., LTD.
- PO-JUNG LIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITA...
- Publication number 20230313410
- Publication date Oct 5, 2023
- LPE S.P.A.
- Silvio Preti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES
- Publication number 20230268387
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shuen-Shin LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER...
- Publication number 20230260841
- Publication date Aug 17, 2023
- SOITEC
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20230261057
- Publication date Aug 17, 2023
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE STRUCTURE AND METHOD OF FORMING GRAPHENE STRUCTURE
- Publication number 20230207312
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Eunkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20230154987
- Publication date May 18, 2023
- DENSO CORPORATION
- HIROKI TSUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING WAFER, AND ME...
- Publication number 20230064469
- Publication date Mar 2, 2023
- Kabushiki Kaisha Toshiba
- Mitsuhiro KUSHIBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Insensitive Epitaxy Formation
- Publication number 20230063033
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE PREPARATION METHOD, SEMICO...
- Publication number 20230009774
- Publication date Jan 12, 2023
- Huawei Technologies Co., Ltd
- Bo Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE CRYSTAL
- Publication number 20230002929
- Publication date Jan 5, 2023
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
Zincblende Structure Group III-Nitride
- Publication number 20220384181
- Publication date Dec 1, 2022
- CAMBRIDGE ENTERPRISE LIMITED
- David John Wallis
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Composite substrate, composite substrate preparation method, semico...

SiC wafer and manufacturing method thereof

Method for CVD deposition of n-type doped silicon carbide and epita...

Seal material for air gaps in semiconductor devices

Methods of forming semiconductor devices in a layer of epitaxial si...

Method for producing a composite structure comprising a thin layer...

CMP process and methods thereof

Semiconductor substrate

Process for producing a monoocrystalline layer of AlN material by t...

Method for manufacturing a composite structure comprising a thin la...

Method of manufacturing a semiconductor device and a semiconductor...

Silicon carbide crystal

Metal-insensitive epitaxy formation

Semiconductor substrate and method of manufacturing the same

Processed wafer and method of manufacturing chip formation wafer

Zincblende structure group III-nitride

Parasitic channel mitigation using silicon carbide diffusion barrie...

Method for manufacturing substrate, method for manufacturing semico...

Epitaxial wafer manufacturing method and epitaxial wafer

Method for manufacturing diamond substrate

Seal material for air gaps in semiconductor devices

Graphene structure and method of forming graphene structure

Compound semiconductor substrate, a pellicle film, and a method for...

Method for producing p-type 4H-SiC single crystal

Silicon carbide epitaxial substrate and method for manufacturing si...

Metal-insensitive epitaxy formation

Compound semiconductor substrate comprising a SiC layer

Compound semiconductor substrate including electron transition laye...

Zincblende structure group III-nitride

Seal material for air gaps in semiconductor devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYE...

Methods of Semiconductor Device Fabrication Involving Porous Silico...

METHOD FOR THE PRODUCTION OF IMPROVED SIC-SUBSTRATES AND SIC-EPILAYERS

SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

CMP PROCESS AND METHODS THEREOF

COMPOSITE SUBSTRATES, SEMICONDUCTOR STRUCTURES, AND METHODS FOR MAN...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER

METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTUR...

SEMICONDUCTOR SUBSTRATE

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...

METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...

SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...

SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...

EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITA...

SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES

METHOD FOR PRODUCING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

GRAPHENE STRUCTURE AND METHOD OF FORMING GRAPHENE STRUCTURE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

WAFER, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING WAFER, AND ME...

Metal-Insensitive Epitaxy Formation

COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE PREPARATION METHOD, SEMICO...

SILICON CARBIDE CRYSTAL

Zincblende Structure Group III-Nitride