Silicon, silicon germanium, germanium

Industry

CPC
H01L21/02381

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02381Silicon, silicon germanium, germanium

Industries

Patents Grantslast 30 patents

Information Patent Grant
Selective methods for fabricating devices and structures
- Patent number 11,948,796
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yi-Chiau Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial layers with discontinued aluminium content for III-nitrid...
- Patent number 11,942,521
- Issue date Mar 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming stacked layers and devices formed thereof
- Patent number 11,942,363
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced interfacial area III-nitride material semiconductor structures
- Patent number 11,942,518
- Issue date Mar 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxial wafer and method of producing semiconductor...
- Patent number 11,935,745
- Issue date Mar 19, 2024
- Sumco Corporation
- Ryosuke Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor manufacturing method
- Patent number 11,915,978
- Issue date Feb 27, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer for an electronic component and method for the produc...
- Patent number 11,915,922
- Issue date Feb 27, 2024
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous semiconductor device substrates with high quality epi...
- Patent number 11,908,922
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with non-gated well tap cell
- Patent number 11,908,896
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing semiconductor substrate surface unevenness
- Patent number 11,901,186
- Issue date Feb 13, 2024
- Massachusetts Institute of Technology
- Li Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming lateral heterojunctions in two-dimensional mate...
- Patent number 11,894,449
- Issue date Feb 6, 2024
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nucleation layer deposition method
- Patent number 11,887,848
- Issue date Jan 30, 2024
- Aixtron SE
- Christof Martin Mauder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gallium nitride-on-silicon devices
- Patent number 11,888,055
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a semiconductor device including a quantum dot struc...
- Patent number 11,881,533
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Kirsten Emilie Moselund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for supporting ultra-thin semicondu...
- Patent number 11,881,398
- Issue date Jan 23, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulations to selectively etch silicon-germanium relative to silicon
- Patent number 11,875,997
- Issue date Jan 16, 2024
- Entegris, Inc.
- Steven M. Bilodeau
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Single crystalline silicon stack formation and bonding to a CMOS wafer
- Patent number 11,869,803
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
- Patent number 11,869,942
- Issue date Jan 9, 2024
- Siltronic AG
- Sarad Bahadur Thapa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cooling semiconductor devices
- Patent number 11,869,804
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- David H. Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting devices having lateral heterojunctions in two-dimens...
- Patent number 11,862,716
- Issue date Jan 2, 2024
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a planar III-N semiconductor layer and...
- Patent number 11,862,459
- Issue date Jan 2, 2024
- HEXAGEM AB
- Jonas Ohlsson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Super-flexible transparent semiconductor film and preparation metho...
- Patent number 11,854,802
- Issue date Dec 26, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High Electron Mobility Transistor (HEMT) with a back barrier layer
- Patent number 11,855,199
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ling Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing SiGe-based zones at different concentrations o...
- Patent number 11,854,805
- Issue date Dec 26, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Joël Kanyandekwe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method therefor
- Patent number 11,848,205
- Issue date Dec 19, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,848,206
- Issue date Dec 19, 2023
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Plasma etching techniques
- Patent number 11,837,467
- Issue date Dec 5, 2023
- Toyko Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module and method for manufacturing the same
- Patent number 11,837,636
- Issue date Dec 5, 2023
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING AN ELECTRONIC POWER DEVICE, AND DEVICE OBT...
- Publication number 20240136446
- Publication date Apr 25, 2024
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Florian Dupont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...
- Publication number 20240136176
- Publication date Apr 25, 2024
- ams-OSRAM International GmbH
- Jelena Ristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR
- Publication number 20240136429
- Publication date Apr 25, 2024
- HRL LABORATORIES, LLC
- Kyung-Ah SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CU ION SENSOR AND CU ION SENSING METHOD
- Publication number 20240125736
- Publication date Apr 18, 2024
- Ming Chi University of Technology
- Sajal BIRING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR THE MANUFACTURE OF AN IMPROVED GRAPHENE SUBSTRATE AND...
- Publication number 20240128079
- Publication date Apr 18, 2024
- Paragraf Limited
- Ivor GUINEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20240120436
- Publication date Apr 11, 2024
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SETUP METHOD FOR ADJUSTING THE TEMPERATURE CONDITIONS OF AN EPITAXY...
- Publication number 20240120240
- Publication date Apr 11, 2024
- SOITEC
- YoungPil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...
- Publication number 20240112909
- Publication date Apr 4, 2024
- Panasonic Intellectual Property Management Co., Ltd.
- Hisayoshi MATSUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240099009
- Publication date Mar 21, 2024
- KIOXIA Corporation
- Mariko SUMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...
- Publication number 20240096619
- Publication date Mar 21, 2024
- ASM IP HOLDING, B.V.
- Brendan Timothy Padraig Marozas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMULATIONS TO SELECTIVELY ETCH SILICON-GERMANIUM RELATIVE TO SILICON
- Publication number 20240096635
- Publication date Mar 21, 2024
- Entegris, Inc.
- Steven M. Bilodeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20240088284
- Publication date Mar 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...
- Publication number 20240087888
- Publication date Mar 14, 2024
- ASM IP HOLDING, B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20240084456
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Kazuhiro KATONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming One or More Covered Voids in a Semiconductor Sub...
- Publication number 20240087948
- Publication date Mar 14, 2024
- Micron Technology, Inc.
- David H. Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240079486
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMBER, TRANSISTOR DEVICES, POWER DEVICES, AND METHOD FOR MANUFACTU...
- Publication number 20240079233
- Publication date Mar 7, 2024
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240071756
- Publication date Feb 29, 2024
- SUMCO CORPORATION
- Koji MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240071761
- Publication date Feb 29, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPPORT SUBSTRATE MADE OF SILICON SUITABLE FOR RADIOFREQUENCY APPLI...
- Publication number 20240071755
- Publication date Feb 29, 2024
- SOITEC
- Oleg Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond Semiconductor System And Method
- Publication number 20240063021
- Publication date Feb 22, 2024
- AKHAN Semiconductor, Inc.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20240055520
- Publication date Feb 15, 2024
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT
- Publication number 20240038531
- Publication date Feb 1, 2024
- Applied Materials, Inc.
- Thomas KIRSCHENHEITER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A III-N MATERIAL-BASED LAYER
- Publication number 20240038532
- Publication date Feb 1, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...
- Publication number 20240021678
- Publication date Jan 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure and Method with Enhanced Gate Contact and Threshold...
- Publication number 20240021727
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Max Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CAPPING OF CONTACT LAYER FOR CMOS DEVICES
- Publication number 20240014076
- Publication date Jan 11, 2024
- Applied Materials, Inc.
- Nicolas Louis BREIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...
- Publication number 20240011193
- Publication date Jan 11, 2024
- Socpra Sciences et Genie s.e.c.
- Youcef Ataellah BIOUD
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Silicon, silicon germanium, germanium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Selective methods for fabricating devices and structures

Epitaxial layers with discontinued aluminium content for III-nitrid...

Methods for forming stacked layers and devices formed thereof

Reduced interfacial area III-nitride material semiconductor structures

Semiconductor epitaxial wafer and method of producing semiconductor...

Transistor manufacturing method

Silicon wafer for an electronic component and method for the produc...

Heterogeneous semiconductor device substrates with high quality epi...

Semiconductor device having doped epitaxial region and its methods...

Integrated circuit structure with non-gated well tap cell

Method of reducing semiconductor substrate surface unevenness

Methods for forming lateral heterojunctions in two-dimensional mate...

Nucleation layer deposition method

Gallium nitride-on-silicon devices

Fabrication of a semiconductor device including a quantum dot struc...

Semiconductor device and method for supporting ultra-thin semicondu...

Formulations to selectively etch silicon-germanium relative to silicon

Single crystalline silicon stack formation and bonding to a CMOS wafer

Heteroepitaxial wafer and method for producing a heteroepitaxial wafer

Methods of cooling semiconductor devices

Light-emitting devices having lateral heterojunctions in two-dimens...

Semiconductor device having a planar III-N semiconductor layer and...

Super-flexible transparent semiconductor film and preparation metho...

High Electron Mobility Transistor (HEMT) with a back barrier layer

Semiconductor structure and method for manufacturing thereof

Method for producing SiGe-based zones at different concentrations o...

Semiconductor structure and manufacturing method therefor

Method of producing a two-dimensional material

Plasma etching techniques

Semiconductor module and method for manufacturing the same

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING AN ELECTRONIC POWER DEVICE, AND DEVICE OBT...

GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

CU ION SENSOR AND CU ION SENSING METHOD

A METHOD FOR THE MANUFACTURE OF AN IMPROVED GRAPHENE SUBSTRATE AND...

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

SETUP METHOD FOR ADJUSTING THE TEMPERATURE CONDITIONS OF AN EPITAXY...

NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...

FORMULATIONS TO SELECTIVELY ETCH SILICON-GERMANIUM RELATIVE TO SILICON

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...

FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

Methods of Forming One or More Covered Voids in a Semiconductor Sub...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

MEMBER, TRANSISTOR DEVICES, POWER DEVICES, AND METHOD FOR MANUFACTU...

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SUPPORT SUBSTRATE MADE OF SILICON SUITABLE FOR RADIOFREQUENCY APPLI...

Diamond Semiconductor System And Method

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT

METHOD FOR PRODUCING A III-N MATERIAL-BASED LAYER

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...

Gate Structure and Method with Enhanced Gate Contact and Threshold...

SELECTIVE CAPPING OF CONTACT LAYER FOR CMOS DEVICES

SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...