Single-crystal growth under a protective fluid

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CPC
C30B27/00

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Patents Grantslast 30 patents

Information Patent Grant
Method and system for liquid encapsulated growth of cadmium zinc te...
- Patent number 11,866,848
- Issue date Jan 9, 2024
- DRS Network & Imaging Systems, LLC
- Lance Robertson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Active cleaning vacuum system and method
- Patent number 11,739,439
- Issue date Aug 29, 2023
- Linton Crystal Technologies Corp.
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Grant
Enhanced crystal nucleation
- Patent number 11,697,671
- Issue date Jul 11, 2023
- Massachusetts Institute of Technology
- Kripa K. Varanasi
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Method for regulating inert gas flow, method for preparing monocrys...
- Patent number 11,629,985
- Issue date Apr 18, 2023
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Hao Pan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Active cleaning vacuum system and method
- Patent number 11,421,346
- Issue date Aug 23, 2022
- Linton Crystal Technologies Corporation
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor and method for producing single crystal of c...
- Patent number 11,371,164
- Issue date Jun 28, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,349,037
- Issue date May 31, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,211,505
- Issue date Dec 28, 2021
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth container
- Patent number 10,533,265
- Issue date Jan 14, 2020
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for reducing deposits in ingot puller exhaust systems
- Patent number 10,145,023
- Issue date Dec 4, 2018
- Corner Star Limited
- Tirumani N. Swaminathan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal producing method
- Patent number 9,903,044
- Issue date Feb 27, 2018
- Sumco Corporation
- Kazumi Tanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing semiconductor single crystal
- Patent number 9,797,068
- Issue date Oct 24, 2017
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing GaAs single crystal and GaAs single crystal wafer
- Patent number 9,469,916
- Issue date Oct 18, 2016
- Dowa Electronics Materials Co., Ltd.
- Ryoichi Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Si-doped GaAs single crystal ingot and process for producing the sa...
- Patent number 8,986,446
- Issue date Mar 24, 2015
- Dowa Electronics Materials Co., Ltd.
- Yoshikazu Oshika
- C30 - CRYSTAL GROWTH
Information Patent Grant
InP single crystal wafer and method for producing InP single crystal
- Patent number 8,815,010
- Issue date Aug 26, 2014
- Nippon Mining & Metals Co., Ltd.
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Kyropoulos sapphire single crystal growing apparatus using elliptic...
- Patent number 8,500,905
- Issue date Aug 6, 2013
- DK Aztec Co., Ltd.
- Jong Kwan Park
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and an apparatus for growing a silicon single crystal from a...
- Patent number 8,460,462
- Issue date Jun 11, 2013
- Siltronic AG
- Piotr Filar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Furnace for growing compound semiconductor single crystal and metho...
- Patent number 7,314,518
- Issue date Jan 1, 2008
- Hitachi Cable, Ltd.
- Michinori Wachi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for compound semiconductor single crystal
- Patent number 7,229,494
- Issue date Jun 12, 2007
- Nippon Mining & Metals Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single crystal of compound semiconductor and...
- Patent number 6,989,059
- Issue date Jan 24, 2006
- Nikko Materials Co., Ltd.
- Toshiaki Asahi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for growing semiconductor crystals with a rigi...
- Patent number 6,896,729
- Issue date May 24, 2005
- AXT, Inc.
- Xiao Gordon Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Protein crystallization in microfluidic structures
- Patent number 6,409,832
- Issue date Jun 25, 2002
- Micronics, Inc.
- Bernhard H. Weigl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing group III-V compound semiconductor crystal
- Patent number 6,007,622
- Issue date Dec 28, 1999
- Sumitomo Electric Industries, Ltd.
- Tomohiro Kawase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for growing long single crystals in a liquid e...
- Patent number 5,394,830
- Issue date Mar 7, 1995
- General Electric Company
- Farzin H. Azad
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing single crystals of III-V compound semiconductors
- Patent number 5,256,381
- Issue date Oct 26, 1993
- Sumitomo Electric Industries, Ltd.
- Koji Tada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Capillary pressure relief for magnetic Kyropoulos growth of semicon...
- Patent number 5,252,175
- Issue date Oct 12, 1993
- The United States of America as represented by the Secretary of the Air Force
- Steven Bachowski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for growing single crystals of III-V compound...
- Patent number 5,145,550
- Issue date Sep 8, 1992
- Sumitomo Electric Industries, Ltd.
- Koji Tada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of drawing-up a single crystal using a double-crucible appar...
- Patent number 5,021,118
- Issue date Jun 4, 1991
- Sumitomo Electric Industries, Ltd.
- Akihisa Kawasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
LEC method and apparatus for growing a single crystal of compound s...
- Patent number 4,973,454
- Issue date Nov 27, 1990
- Sumitomo Electric Industries Ltd.
- Mikio Morioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
LEC method for growing a single crystal of compound semiconductors
- Patent number 4,911,780
- Issue date Mar 27, 1990
- Sumitomo Electric Industries, Ltd.
- Mikio Morioka
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
ENHANCED CRYSTAL NUCLEATION
- Publication number 20230416303
- Publication date Dec 28, 2023
- Massachusetts Institute of Technology
- Kripa K. Varanasi
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
- Publication number 20230243067
- Publication date Aug 3, 2023
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Naoya SUNACHI
- C30 - CRYSTAL GROWTH
Information Patent Application
ACTIVE CLEANING VACUUM SYSTEM AND METHOD
- Publication number 20220349090
- Publication date Nov 3, 2022
- Linton Crystal Technologies Corporation
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Application
Device and Method for Continuous VGF Crystal Growth through Reverse...
- Publication number 20210285123
- Publication date Sep 16, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF C...
- Publication number 20210108335
- Publication date Apr 15, 2021
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
ACTIVE CLEANING VACUUM SYSTEM AND METHOD
- Publication number 20200291543
- Publication date Sep 17, 2020
- Linton Crystal Technologies Corporation
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...
- Publication number 20180102446
- Publication date Apr 12, 2018
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH CONTAINER
- Publication number 20180010262
- Publication date Jan 11, 2018
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING GAAS SINGLE CRYSTAL AND GAAS SINGLE CRYSTAL WAFER
- Publication number 20140205527
- Publication date Jul 24, 2014
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Ryoichi Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A...
- Publication number 20130220216
- Publication date Aug 29, 2013
- Siltronic AG
- Piotr Filar
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL
- Publication number 20130008370
- Publication date Jan 10, 2013
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120288403
- Publication date Nov 15, 2012
- Hitachi Cable, Ltd.
- Takashi KIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
KYROPOULOS SAPPHIRE SINGLE CRYSTAL GROWING APPARATUS USING ELLIPTIC...
- Publication number 20120186513
- Publication date Jul 26, 2012
- DK AZTEC Co., Ltd
- Jong Kwan PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs Wafer And Method For Manufacturing The GaAs Wafer
- Publication number 20120128915
- Publication date May 24, 2012
- Hitachi Cable, Ltd.
- Takeshi KIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
Si-Doped GaAs single crystal ingot and process for producing the sa...
- Publication number 20110059294
- Publication date Mar 10, 2011
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Oshika
- C30 - CRYSTAL GROWTH
Information Patent Application
Method And An Apparatus For Growing A Silicon Single Crystal From A...
- Publication number 20100288185
- Publication date Nov 18, 2010
- Siltronic AG
- Piotr Filar
- C30 - CRYSTAL GROWTH
Information Patent Application
Si-Doped GaAs Single Crystal Ingot and Process for Producing the Sa...
- Publication number 20090098377
- Publication date Apr 16, 2009
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Oshika
- C30 - CRYSTAL GROWTH
Information Patent Application
Inp Single Crystal Wafer and Method for Producing Inp Single Crystal
- Publication number 20080019896
- Publication date Jan 24, 2008
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Application
Vessel for growing a compound semiconductor single crystal, compoun...
- Publication number 20060260536
- Publication date Nov 23, 2006
- Hitachi Cable, Ltd.
- Michinori Wachi
- C30 - CRYSTAL GROWTH
Information Patent Application
Furnace for growing compound semiconductor single crystal and metho...
- Publication number 20050223971
- Publication date Oct 13, 2005
- HITACHI CABLE, LTD.
- Michinori Wachi
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for compound semiconductor single crystal
- Publication number 20050118739
- Publication date Jun 2, 2005
- Nikko Materials Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal of compound semiconductor and...
- Publication number 20050000403
- Publication date Jan 6, 2005
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Protein crystallization in microfluidic structures
- Publication number 20030075101
- Publication date Apr 24, 2003
- Bernhard H. Weigl
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for growing semiconductor crystals with a rigi...
- Publication number 20030037721
- Publication date Feb 27, 2003
- Xiao Gordon Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Protein crystallization in microfluidic structures
- Publication number 20010027745
- Publication date Oct 11, 2001
- Bernhard H. Weigl
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL

Single-crystal growth under a protective fluid

Industry

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Patents Grantslast 30 patents

Method and system for liquid encapsulated growth of cadmium zinc te...

Active cleaning vacuum system and method

Enhanced crystal nucleation

Method for regulating inert gas flow, method for preparing monocrys...

Active cleaning vacuum system and method

Compound semiconductor and method for producing single crystal of c...

Indium phosphide wafer, photoelectric conversion element, and metho...

Indium phosphide wafer, photoelectric conversion element, and metho...

Growth container

Methods for reducing deposits in ingot puller exhaust systems

Silicon single crystal producing method

Method of producing semiconductor single crystal

Method of producing GaAs single crystal and GaAs single crystal wafer

Si-doped GaAs single crystal ingot and process for producing the sa...

InP single crystal wafer and method for producing InP single crystal

Kyropoulos sapphire single crystal growing apparatus using elliptic...

Method and an apparatus for growing a silicon single crystal from a...

Furnace for growing compound semiconductor single crystal and metho...

Production method for compound semiconductor single crystal

Process for producing single crystal of compound semiconductor and...

Method and apparatus for growing semiconductor crystals with a rigi...

Protein crystallization in microfluidic structures

Method of preparing group III-V compound semiconductor crystal

Apparatus and method for growing long single crystals in a liquid e...

Apparatus for growing single crystals of III-V compound semiconductors

Capillary pressure relief for magnetic Kyropoulos growth of semicon...

Process and apparatus for growing single crystals of III-V compound...

Method of drawing-up a single crystal using a double-crucible appar...

LEC method and apparatus for growing a single crystal of compound s...

LEC method for growing a single crystal of compound semiconductors

Patents Applicationslast 30 patents

ENHANCED CRYSTAL NUCLEATION

GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER

ACTIVE CLEANING VACUUM SYSTEM AND METHOD

Device and Method for Continuous VGF Crystal Growth through Reverse...

COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF C...

ACTIVE CLEANING VACUUM SYSTEM AND METHOD

INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...

GROWTH CONTAINER

METHOD OF PRODUCING GAAS SINGLE CRYSTAL AND GAAS SINGLE CRYSTAL WAFER

METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A...

METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL

GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME

KYROPOULOS SAPPHIRE SINGLE CRYSTAL GROWING APPARATUS USING ELLIPTIC...

GaAs Wafer And Method For Manufacturing The GaAs Wafer

Si-Doped GaAs single crystal ingot and process for producing the sa...

Method And An Apparatus For Growing A Silicon Single Crystal From A...

Si-Doped GaAs Single Crystal Ingot and Process for Producing the Sa...

Inp Single Crystal Wafer and Method for Producing Inp Single Crystal

Vessel for growing a compound semiconductor single crystal, compoun...

Furnace for growing compound semiconductor single crystal and metho...

Production method for compound semiconductor single crystal

Process for producing single crystal of compound semiconductor and...

Protein crystallization in microfluidic structures

Method and apparatus for growing semiconductor crystals with a rigi...

Protein crystallization in microfluidic structures