Single crystal on amorphous substrate

Industry

CPC
Y10S148/152

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/152Single crystal on amorphous substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a BIMIS
- Patent number 5,773,340
- Issue date Jun 30, 1998
- Hitachi, Ltd.
- Takahiro Kumauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoelectric conversion device
- Patent number 5,610,094
- Issue date Mar 11, 1997
- Canon Kabushiki Kaisha
- Masaharu Ozaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a lattice mismatched heterostructure optical waveg...
- Patent number 5,354,709
- Issue date Oct 11, 1994
- The United States of America as represented by the Secretary of the Air Force
- Joseph P. Lorenzo
- G02 - OPTICS
Information Patent Grant
Method for the production of polycrystalline layers having granular...
- Patent number 5,238,879
- Issue date Aug 24, 1993
- Siemens Aktiengesellschaft
- Rolf Plaettner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice mismatched hetrostructure optical waveguide
- Patent number 5,163,118
- Issue date Nov 10, 1992
- The United States of America as represented by the Secretary of the Air Force
- Joseph P. Lorenzo
- G02 - OPTICS
Information Patent Grant
Semiconductor article and preparation thereof
- Patent number 5,130,778
- Issue date Jul 14, 1992
- Canon Kabushiki Kaisha
- Shiro Arikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar battery and process for preparing same
- Patent number 5,087,296
- Issue date Feb 11, 1992
- Canon Kabushiki Kaisha
- Shigeki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device h...
- Patent number 5,077,235
- Issue date Dec 31, 1991
- Ricoh Comany, Ltd.
- Daisuke Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping technique for zone-melting recrystallization of insulated s...
- Patent number 5,066,610
- Issue date Nov 19, 1991
- Massachusetts Institute of Technology
- Chenson K. Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductive arrangement having dissimilar, laterally spaced laye...
- Patent number 5,049,522
- Issue date Sep 17, 1991
- Hughes Aircraft Company
- William E. Stanchina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoelectric converter
- Patent number 5,013,670
- Issue date May 7, 1991
- Canon Kabushiki Kaisha
- Shiro Arikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing compound semiconductor using an amorphous nuc...
- Patent number 5,010,033
- Issue date Apr 23, 1991
- Canon Kabushiki Kaisha
- Hiroyuki Tokunaga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making a photoelectric conversion device using an amorph...
- Patent number 5,008,206
- Issue date Apr 16, 1991
- Canon Kabushiki Kaisha
- Mahito Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing high sensitivity semiconductive magnetoresist...
- Patent number 5,008,215
- Issue date Apr 16, 1991
- Industrial Technology Research Institute
- Duen J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of a semiconductor article using an amorphous seed to g...
- Patent number 4,999,313
- Issue date Mar 12, 1991
- Canon Kabushiki Kaisha
- Shiro Arikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming improved encapsulation layer
- Patent number 4,990,464
- Issue date Feb 5, 1991
- North American Philips Corp.
- Helmut Baumgart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a photosensor using selective epitaxial growth
- Patent number 4,977,096
- Issue date Dec 11, 1990
- Canon Kabushiki Kaisha
- Tetsuya Shimada
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for forming epitaxial silicon on insulator structures using...
- Patent number 4,910,165
- Issue date Mar 20, 1990
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial process for silicon on insulator structure
- Patent number 4,902,642
- Issue date Feb 20, 1990
- Texas Instruments, Incorporated
- Bor-Yen Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reduced stress recrystallization
- Patent number 4,888,302
- Issue date Dec 19, 1989
- North American Philips Corporation
- Subramanian Ramesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photosensor with charge storage unit and switch unit formed on a si...
- Patent number 4,866,291
- Issue date Sep 12, 1989
- Canon Kabushiki Kaisha
- Tetsuya Shimada
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Three dimensional semiconductor on insulator substrate
- Patent number 4,834,809
- Issue date May 30, 1989
- Sharp Kabushiki Kaisha
- Yoshinobu Kakihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for growing silicon-on-insulator wafers using lateral epita...
- Patent number 4,760,036
- Issue date Jul 26, 1988
- Delco Electronics Corporation
- Peter J. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising MOS transistors having electrodes of...
- Patent number 4,731,318
- Issue date Mar 15, 1988
- Societe Pour L'etude et la Fabrication des Circuits Integres Speciaux E.F.C.I.S.
- Alain Roche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a large number of monocrystalline semiconductor r...
- Patent number 4,604,159
- Issue date Aug 5, 1986
- Hitachi, Ltd.
- Yutaka Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphoepitaxy by encapsulation
- Patent number 4,565,599
- Issue date Jan 21, 1986
- Massachusetts Institute of Technology
- Michael W. Geis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of entraining dislocations and other crystalline defects in...
- Patent number 4,479,846
- Issue date Oct 30, 1984
- Massachusetts Institute of Technology
- Henry I. Smith
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral epitaxial growth by seeded solidification
- Patent number 4,371,421
- Issue date Feb 1, 1983
- Massachusetts Institute of Technology
- John C. C. Fan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dual electrically insulated solar cells
- Patent number 4,094,704
- Issue date Jun 13, 1978
- Arthur G. Milnes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for low temperature stoichiometric recrystallization of com...
- Patent number 4,095,004
- Issue date Jun 13, 1978
- Hughes Aircraft Company
- Lewis M. Fraas
- C30 - CRYSTAL GROWTH

Single crystal on amorphous substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a BIMIS

Photoelectric conversion device

Method of making a lattice mismatched heterostructure optical waveg...

Method for the production of polycrystalline layers having granular...

Lattice mismatched hetrostructure optical waveguide

Semiconductor article and preparation thereof

Solar battery and process for preparing same

Method of manufacturing a semiconductor integrated circuit device h...

Capping technique for zone-melting recrystallization of insulated s...

Semiconductive arrangement having dissimilar, laterally spaced laye...

Photoelectric converter

Process for producing compound semiconductor using an amorphous nuc...

Method for making a photoelectric conversion device using an amorph...

Process for preparing high sensitivity semiconductive magnetoresist...

Preparation of a semiconductor article using an amorphous seed to g...

Method of forming improved encapsulation layer

Method of making a photosensor using selective epitaxial growth

Method for forming epitaxial silicon on insulator structures using...

Epitaxial process for silicon on insulator structure

Method of reduced stress recrystallization

Photosensor with charge storage unit and switch unit formed on a si...

Three dimensional semiconductor on insulator substrate

Process for growing silicon-on-insulator wafers using lateral epita...

Integrated circuit comprising MOS transistors having electrodes of...

Method of forming a large number of monocrystalline semiconductor r...

Graphoepitaxy by encapsulation

Method of entraining dislocations and other crystalline defects in...

Lateral epitaxial growth by seeded solidification

Dual electrically insulated solar cells

Process for low temperature stoichiometric recrystallization of com...