Claims
- 1. A method of forming an epitaxial silicon layer on a single crystalline silicon film which is on an insulating layer, said method comprising:
- implanting oxygen into the surface of a silicon material;
- annealing the silicon material so that a single crystalline film is formed over a layer of silicon dioxide;
- forming a layer of amorphous silicon on said single crystalline silicon film; and
- annealing all of said layer of amorphous silicon at substantially the same time to form a layer of single crystalline silicon.
- 2. The method of claim 1, wherein said layer of amorphous silicon is formed by low pressure chemical vapor deposition of silicon.
- 3. The method of claim 1, wherein said layer of amorphous silicon is formed by a molecular beam deposition process.
- 4. The method of claim 2, wherein said low pressure chemical vapor deposition process is carried out at a pressure of less than 250 millitorrs.
- 5. The method of claim 2, wherein said low pressure chemical vapor deposition process is carried out at less than 650.degree. C.
- 6. The method of claim 1, further comprising, prior to said step of forming a layer of amorphous silicon on said silicon film, the step of:
- treating said silicon film to remove residual oxide from said silicon film.
- 7. The method of claim 6, wherein said step of treating said silicon film comprises:
- subjecting said film to a hydrofluoric acid wet etch.
- 8. The method of claim 6, wherein said step of treating said silicon film comprises:
- heating said silicon film.
- 9. The method of claim 8, wherein said heating of said silicon film is to temperatures below 725.degree. C.
- 10. The method of claim 6, wherein said step of treating said silicon film comprises:
- subjecting said silicon film to a reduced pressure environment.
- 11. The method of claim 10, wherein said reduced pressure environment comprises a pressure of less than 10.sup.-5 torr.
- 12. The method of claim 6, wherein said step of annealing said layer of amorphous silicon comprises heating said layer of amorphous silicon to a temperature above 1000.degree. C.
- 13. The method of claim 6, wherein said step of annealing said layer of amorphous silicon comprises heating said layer of amorphous silicon to a temperature above 1200.degree. C.
- 14. The method of claim 6, wherein said step of treating said silicon film comprises:
- subjecting said silicon film to an environment of from 550.degree. C. to 700.degree. C. at a pressure of less than 10.sup.-7 torr.
Parent Case Info
This application is a continuation of application Ser. No. 07/082,898, filed Aug. 7, 1987 now abandoned.
Government Interests
This invention was made with Government support under contract number N00014-84C-2339, awarded by the Naval Research Laboratory.
US Referenced Citations (14)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0152285 |
Aug 1984 |
JPX |
Non-Patent Literature Citations (3)
Entry |
Ota, Thin Solid Films, vol. 106, 1983, pp. 111 and 112. |
Kamins et al., "Structure and Stability of Low Pressure Chemically Vapor-Deposited Silicon Films", J. Electrochem Soc., vol. 125, No. 6, Jun. 1978, pp. 927-932. |
Sze, "VLSI Technology", McGraw-Hill Book Co., New York, N.Y., 1983, pp. 99-103. |
Continuations (1)
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Number |
Date |
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Parent |
82898 |
Aug 1987 |
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