Sliding boat system

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CPC
C30B19/063

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

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C30B19/063Sliding boat system

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Patents Grantslast 30 patents

Information Patent Grant
Organic semiconductor thin film production method
- Patent number 10,205,094
- Issue date Feb 12, 2019
- PI-CRYSTAL INC.
- Junichi Takeya
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Group III nitride crystal, method for growing the group III nitride...
- Patent number 8,916,124
- Issue date Dec 23, 2014
- Ricoh Company, Ltd.
- Hisashi Minemoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, electronic device, optical device, and pro...
- Patent number 8,084,281
- Issue date Dec 27, 2011
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growing method
- Patent number 7,842,133
- Issue date Nov 30, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing compound single crystal and production apparat...
- Patent number 7,435,295
- Issue date Oct 14, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Liquid-phase epitaxy growth system and method for growing epitaxial...
- Patent number 5,482,555
- Issue date Jan 9, 1996
- Samsung Electronics Co., Ltd.
- Song J. Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid-phase epitaxy growth system and method for growing epitaxial...
- Patent number 5,334,278
- Issue date Aug 2, 1994
- Samsung Electronics Co., Ltd.
- Song J. Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxial film growth apparatus
- Patent number 5,264,190
- Issue date Nov 23, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masatosi Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Forming thin liquid phase epitaxial layers
- Patent number 5,223,079
- Issue date Jun 29, 1993
- Motorola, Inc.
- Kwong-Hang Leung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Hetero-epitaxial liquid phase growth method
- Patent number 5,130,270
- Issue date Jul 14, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Masatoshi Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for liquid-phase thin film epitaxy
- Patent number 5,068,516
- Issue date Nov 26, 1991
- SamSung Electronics Co., Ltd.
- Kim Ki-Joon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a ternary monocrystalline layer by means of het...
- Patent number 5,064,780
- Issue date Nov 12, 1991
- U.S. Philips Corporation
- Laurent Grijol
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for liquid-phase thin film epitaxy
- Patent number 4,918,029
- Issue date Apr 17, 1990
- Samsung Electronics Co., Ltd.
- Ki-Joon Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for multi-bath liquid phase epitaxy
- Patent number 4,779,561
- Issue date Oct 25, 1988
- U.S. Philips Corporation
- Francois Fromage
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multiple-layer growth of plural semiconductor devices
- Patent number 4,774,904
- Issue date Oct 4, 1988
- Jamie Knapp
- C30 - CRYSTAL GROWTH
Information Patent Grant
Boat for liquid phase epitaxial growth
- Patent number 4,768,463
- Issue date Sep 6, 1988
- Mitsubishi Denki Kabushiki Kaisha
- Susumu Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for epitaxy from the liquid phase of semiconductor layers
- Patent number 4,748,933
- Issue date Jun 7, 1988
- U.S. Philips Corporation
- Bernard Latorre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for epitaxy from the liquid phase of semiconductor layers...
- Patent number 4,748,932
- Issue date Jun 7, 1988
- U.S. Philips Corporation
- Bernard Latorre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wipe-off apparatus of liquid phase epitaxy of mercury cadmium tellu...
- Patent number 4,706,604
- Issue date Nov 17, 1987
- Honeywell Inc.
- Robert J. Hager
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxial growth method
- Patent number 4,702,781
- Issue date Oct 27, 1987
- Matsushita Electric Industrial Co., Ltd.
- Yoichi Sasai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy slider/stator assembly having non-wetting grow...
- Patent number 4,697,543
- Issue date Oct 6, 1987
- Honeywell Inc.
- Richard C. Abbott
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for carrying out liquid phase epitaxy growth
- Patent number 4,602,592
- Issue date Jul 29, 1986
- Telefonaktiebolaget LM Ericsson
- Tsviatko S. Ganev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Protection of semiconductor substrates during epitaxial growth proc...
- Patent number 4,601,888
- Issue date Jul 22, 1986
- AT&T Bell Laboratories
- Paul R. Besomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Melt dispensing liquid phase epitaxy boat
- Patent number 4,574,730
- Issue date Mar 11, 1986
- Northern Telecom Limited
- Mikelis N. Svilans
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy apparatus
- Patent number 4,535,720
- Issue date Aug 20, 1985
- U.S. Philips Corporation
- John C. Brice
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxial growth technique
- Patent number 4,504,328
- Issue date Mar 12, 1985
- Mitsubishi Denki Kabushiki Kaisha
- Ryoichi Hirano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Protection of semiconductor substrates during epitaxial growth proc...
- Patent number 4,482,423
- Issue date Nov 13, 1984
- AT&T Bell Laboratories
- Paul R. Besomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
LPE Apparatus with improved thermal geometry
- Patent number 4,470,368
- Issue date Sep 11, 1984
- AT&T Bell Laboratories
- Claude L. Reynolds
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling the partial pressure of at least one substanc...
- Patent number 4,468,258
- Issue date Aug 28, 1984
- Licentia Patent-Verwaltungs- GmbH
- Werner Pfister
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy
- Patent number 4,427,464
- Issue date Jan 24, 1984
- Bell Telephone Laboratories, Incorporated
- Bulusu V. Dutt
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
ORGANIC SEMICONDUCTOR THIN FILM PRODUCTION METHOD
- Publication number 20160104842
- Publication date Apr 14, 2016
- OSAKA UNIVERSITY
- Junichi TAKEYA
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Substrate, Electronic Device, Optical Device, and Pro...
- Publication number 20100301358
- Publication date Dec 2, 2010
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE...
- Publication number 20100260656
- Publication date Oct 14, 2010
- PANASONIC CORPORATION
- Hisashi Minemoto
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROWING METHOD
- Publication number 20090000538
- Publication date Jan 1, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Compound Single Crystal and Production Apparat...
- Publication number 20070215035
- Publication date Sep 20, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- C30 - CRYSTAL GROWTH

Sliding boat system

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Organic semiconductor thin film production method

Group III nitride crystal, method for growing the group III nitride...

Semiconductor substrate, electronic device, optical device, and pro...

Single crystal growing method

Method for producing compound single crystal and production apparat...

Liquid-phase epitaxy growth system and method for growing epitaxial...

Liquid-phase epitaxy growth system and method for growing epitaxial...

Liquid phase epitaxial film growth apparatus

Forming thin liquid phase epitaxial layers

Hetero-epitaxial liquid phase growth method

Device for liquid-phase thin film epitaxy

Method of obtaining a ternary monocrystalline layer by means of het...

Method for liquid-phase thin film epitaxy

Crucible for multi-bath liquid phase epitaxy

Multiple-layer growth of plural semiconductor devices

Boat for liquid phase epitaxial growth

Crucible for epitaxy from the liquid phase of semiconductor layers

Crucible for epitaxy from the liquid phase of semiconductor layers...

Wipe-off apparatus of liquid phase epitaxy of mercury cadmium tellu...

Liquid phase epitaxial growth method

Liquid phase epitaxy slider/stator assembly having non-wetting grow...

Apparatus for carrying out liquid phase epitaxy growth

Protection of semiconductor substrates during epitaxial growth proc...

Melt dispensing liquid phase epitaxy boat

Liquid phase epitaxy apparatus

Liquid phase epitaxial growth technique

Protection of semiconductor substrates during epitaxial growth proc...

LPE Apparatus with improved thermal geometry

Method of controlling the partial pressure of at least one substanc...

Liquid phase epitaxy

Patents Applicationslast 30 patents

ORGANIC SEMICONDUCTOR THIN FILM PRODUCTION METHOD

Semiconductor Substrate, Electronic Device, Optical Device, and Pro...

GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE...

SINGLE CRYSTAL GROWING METHOD

Method for Producing Compound Single Crystal and Production Apparat...