Solid phase epitaxial growth through a disordered intermediate layer

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CPC
C30B1/026

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B1/00Single-crystal growth directly from the solid state

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C30B1/026Solid phase epitaxial growth through a disordered intermediate layer

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Patents Grantslast 30 patents

Information Patent Grant
Monolayer graphene on non-polar face SiC substrate and control meth...
- Patent number 12,051,585
- Issue date Jul 30, 2024
- Tianjin University
- Lei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a crystalline metal-phosphide hetero-layer b...
- Patent number 11,674,237
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Yannick Baumgartner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing crystal in recess and processing apparatus used t...
- Patent number 10,822,714
- Issue date Nov 3, 2020
- Tokyo Electron Limited
- Yoichiro Chiba
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a plate-like alumina power
- Patent number 10,221,076
- Issue date Mar 5, 2019
- NGK Insulators, Ltd.
- Hiroshi Fukui
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Process for preparing an epitaxial alpha-quartz layer on a solid su...
- Patent number 10,053,795
- Issue date Aug 21, 2018
- Centre National de la Recherche Scientifique
- Cedric Boissiere
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon composite substrates
- Patent number 9,997,353
- Issue date Jun 12, 2018
- Ananda H. Kumar
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film forming method and film forming apparatus
- Patent number 9,966,256
- Issue date May 8, 2018
- Tokyo Electron Limited
- Satoshi Takagi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for forming graphene layers on silicon carbide
- Patent number 9,771,665
- Issue date Sep 26, 2017
- Griffith University
- Francesca Iacopi
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Solid phase epitaxy reactor, the most cost effective GaAs epitaxial...
- Patent number 5,725,659
- Issue date Mar 10, 1998
- Fareed Sepehry-Fard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a thin layer of superconducting material on a su...
- Patent number 4,983,570
- Issue date Jan 8, 1991
- Thomson-CSF
- Gerard Creuzet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single-crystal ceramics
- Patent number 4,900,393
- Issue date Feb 13, 1990
- Matsushita Electric Industrial Co., Ltd.
- Koichi Kugimiya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the growth of structures based on group IV semiconducto...
- Patent number 4,670,086
- Issue date Jun 2, 1987
- American Telephone and Telegraph Company
- Harry J. Leamy
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 4,383,883
- Issue date May 17, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid phase epitaxial growth
- Patent number 4,012,235
- Issue date Mar 15, 1977
- California Institute of Technology
- James W. Mayer
- C30 - CRYSTAL GROWTH
Information Patent Grant
3655439
- Patent number 3,655,439
- Issue date Apr 11, 1972
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20230349065
- Publication date Nov 2, 2023
- Kokusai Electric Corporation
- Takahiro MIYAKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
FERROELECTRIC THIN FILM AND FORMING METHOD THEREOF
- Publication number 20230323562
- Publication date Oct 12, 2023
- Seoul National University R&DB Foundation
- Jungwon PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOLAYER GRAPHENE ON NON-POLAR FACE SiC SUBSTRATE AND CONTROL METH...
- Publication number 20220122832
- Publication date Apr 21, 2022
- TIANJIN UNIVERSITY
- Lei MA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING CRYSTAL IN RECESS AND PROCESSING APPARATUS USED T...
- Publication number 20170253989
- Publication date Sep 7, 2017
- TOKYO ELECTRON LIMITED
- Yoichiro CHIBA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING PLATE-LIKE ALUMINA POWDER
- Publication number 20170174524
- Publication date Jun 22, 2017
- NGK Insulators, Ltd.
- Hiroshi FUKUI
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR FORMING GRAPHENE LAYERS ON SILICON CARBIDE
- Publication number 20160230304
- Publication date Aug 11, 2016
- GRIFFITH UNIVERSITY
- Francesca IACOPI
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHODS OF FORMING PEROVSKITE FILMS
- Publication number 20160068990
- Publication date Mar 10, 2016
- Drexel University
- Jonathan E. SPANIER
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING METHOD AND FILM FORMING APPARATUS
- Publication number 20160071728
- Publication date Mar 10, 2016
- TOKYO ELECTRON LIMITED
- Satoshi TAKAGI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD, SYSTEM, AND APPARATUS FOR DOPING AND FOR MULTI-CHAMBER HIGH...
- Publication number 20140190401
- Publication date Jul 10, 2014
- Fareed Sepehry-Fard
- C30 - CRYSTAL GROWTH
Information Patent Application
Method, system, and apparatus for doping and for multi-chamber high...
- Publication number 20080264332
- Publication date Oct 30, 2008
- Fareed Sepehry-Fard
- C30 - CRYSTAL GROWTH

Solid phase epitaxial growth through a disordered intermediate layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Monolayer graphene on non-polar face SiC substrate and control meth...

Method for fabricating a crystalline metal-phosphide hetero-layer b...

Method of growing crystal in recess and processing apparatus used t...

Method for producing a plate-like alumina power

Process for preparing an epitaxial alpha-quartz layer on a solid su...

Silicon composite substrates

Film forming method and film forming apparatus

Process for forming graphene layers on silicon carbide

Solid phase epitaxy reactor, the most cost effective GaAs epitaxial...

Method for forming a thin layer of superconducting material on a su...

Process for producing single-crystal ceramics

Process for the growth of structures based on group IV semiconducto...

Method for fabricating semiconductor device

Solid phase epitaxial growth

3655439

Patents Applicationslast 30 patents

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

FERROELECTRIC THIN FILM AND FORMING METHOD THEREOF

MONOLAYER GRAPHENE ON NON-POLAR FACE SiC SUBSTRATE AND CONTROL METH...

METHOD OF GROWING CRYSTAL IN RECESS AND PROCESSING APPARATUS USED T...

METHOD FOR PRODUCING PLATE-LIKE ALUMINA POWDER

PROCESS FOR FORMING GRAPHENE LAYERS ON SILICON CARBIDE

METHODS OF FORMING PEROVSKITE FILMS

FILM FORMING METHOD AND FILM FORMING APPARATUS

METHOD, SYSTEM, AND APPARATUS FOR DOPING AND FOR MULTI-CHAMBER HIGH...

Method, system, and apparatus for doping and for multi-chamber high...