3655439

Information

• Patent Grant
• 3655439

• References
• Source

• Patent Number

  3,655,439

• Date Filed

  Not available

• Date Issued

  Tuesday, April 11, 1972
  52 years ago

• CPC

  • H01L21/76294 - using selective deposition of single crystal silicon
  • C30B1/026 - Solid phase epitaxial growth through a disordered intermediate layer
  • C30B25/18 - characterised by the substrate
  • C30B25/22 - Sandwich processes
  • H01L21/02178 - the material containing aluminium
  • H01L21/02186 - the material containing titanium
  • H01L21/02194 - the material containing more than one metal element
  • H01L21/02271 - deposition by decomposition or reaction of gaseous or vapour phase compounds
  • H01L21/02356 - treatment to change the morphology of the insulating layer
  • H01L21/3162 - on a silicon body
  • H01L21/31625 - Deposition of boron or phosphorus doped silicon oxide
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S117/902 - Specified orientation, shape, crystallography, or size of seed or substrate
  • Y10S148/043 - Dual dielectric
  • Y10S148/085 - Isolated-integrated
  • Y10S148/115 - Orientation
  • Y10S148/122 - Polycrystalline
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/967 - Semiconductor on specified insulator

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices