SOS transistors

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H01L29/78657

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/78657SOS transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 12,074,217
- Issue date Aug 27, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number 11,901,459
- Issue date Feb 13, 2024
- pSemi Corporation
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device having an electric field infibition film
- Patent number 11,605,690
- Issue date Mar 14, 2023
- Japan Display Inc.
- Takuma Nishinohara
- G02 - OPTICS
Information Patent Grant
Recessed channel structure in FDSOI
- Patent number 11,316,026
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number RE48965
- Issue date Mar 8, 2022
- pSemi Corporation
- Michael A. Stuber
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number 11,201,245
- Issue date Dec 14, 2021
- pSemi Corporation
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 11,011,633
- Issue date May 18, 2021
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 10,886,305
- Issue date Jan 5, 2021
- Samsung Display Co., Ltd.
- Yunmo Chung
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number 10,818,796
- Issue date Oct 27, 2020
- pSemi Corporation
- Michael A. Stuber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,797,172
- Issue date Oct 6, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,790,390
- Issue date Sep 29, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method for semiconductor device
- Patent number 10,734,494
- Issue date Aug 4, 2020
- Lapis Semiconductor Co., Ltd.
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,629,733
- Issue date Apr 21, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound lateral resistor structures for integrated circuitry
- Patent number 10,340,220
- Issue date Jul 2, 2019
- Intel Corporation
- Chen-Guan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate and method for manufacturing same
- Patent number 10,065,395
- Issue date Sep 4, 2018
- Kyocera Corporation
- Hideki Matsushita
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 9,653,601
- Issue date May 16, 2017
- Peregrine Semiconductor Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for producing SOS substrates, and SOS substrate
- Patent number 9,646,873
- Issue date May 9, 2017
- Shin-Etsu Chemical Co., Ltd.
- Shigeru Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-contact metal-oxide-semiconductor field effect transistor device
- Patent number 9,620,640
- Issue date Apr 11, 2017
- Mediatek Inc.
- Cheng-Chou Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number 9,608,619
- Issue date Mar 28, 2017
- Peregrine Semiconductor Corporation
- Michael A. Stuber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Grounding of silicon-on-insulator structure
- Patent number 9,087,906
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number 8,954,902
- Issue date Feb 10, 2015
- Peregrine Semiconductor Corporation
- Michael A. Stuber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
8893062
- Patent number 8,893,062
- Issue date Nov 18, 2014
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
SOS substrate with reduced stress
- Patent number 8,748,294
- Issue date Jun 10, 2014
- Shin-Etsu Chemical Co., Ltd.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with stress-absorbing semiconductor layer
- Patent number 8,198,681
- Issue date Jun 12, 2012
- Infineon Technologies AG
- Georg Tempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus improving gate oxide reliability by controllin...
- Patent number 7,890,891
- Issue date Feb 15, 2011
- Peregrine Semiconductor Corporation
- Michael A. Stuber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,879,657
- Issue date Feb 1, 2011
- Oki Semiconductor Co., Ltd.
- Hidetsugu Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-sapphire semiconductor device with shallow lightly-doped...
- Patent number 7,663,189
- Issue date Feb 16, 2010
- Oki Semiconductor Co., Ltd.
- Koichi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for semiconductor component with stress-carrying...
- Patent number 7,642,544
- Issue date Jan 5, 2010
- Infineon Technologies AG
- Georg Tempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,514,745
- Issue date Apr 7, 2009
- Oki Semiconductor Co., Ltd.
- Masahiko Kasuga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors bonded on glass substrates
- Patent number 7,504,310
- Issue date Mar 17, 2009
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20240421227
- Publication date Dec 19, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLIN...
- Publication number 20240266441
- Publication date Aug 8, 2024
- pSemi Corporation
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLIN...
- Publication number 20220181497
- Publication date Jun 9, 2022
- pSemi Corporation
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20210320206
- Publication date Oct 14, 2021
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLIN...
- Publication number 20200335633
- Publication date Oct 22, 2020
- pSemi Corporation
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20200321467
- Publication date Oct 8, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs usin...
- Publication number 20190237579
- Publication date Aug 1, 2019
- pSemi Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs usin...
- Publication number 20190088781
- Publication date Mar 21, 2019
- pSemi Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
COMPOUND LATERAL RESISTOR STRUCTURES FOR INTEGRATED CIRCUITRY
- Publication number 20190006279
- Publication date Jan 3, 2019
- Intel Corporation
- Chen-Guan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus Improving Gate Oxide Reliability by Controllin...
- Publication number 20170236946
- Publication date Aug 17, 2017
- PEREGRINE SEMICONDUCTOR CORPORATION
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUNDING OF SILICON-ON-INSULATOR STRUCTURE
- Publication number 20150097240
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Purakh Raj VERMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus Improving Gate Oxide Reliability by Controllin...
- Publication number 20140167834
- Publication date Jun 19, 2014
- PEREGRINE SEMICONDUCTOR CORPORATION
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOS SUBSTRATE WITH REDUCED STRESS
- Publication number 20120280355
- Publication date Nov 8, 2012
- Shin-Etsu Chemical Co., Ltd.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE DEVICES ON INSULATOR SUBSTRATES
- Publication number 20120096416
- Publication date Apr 19, 2012
- Chriswell G. Hutchens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus Improving Gate Oxide Reliability by Controllin...
- Publication number 20110227637
- Publication date Sep 22, 2011
- Michael A. Stuber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR COMPONENT WITH STRESS-ABSORBING SEMICONDUCTOR LAYER,...
- Publication number 20100084691
- Publication date Apr 8, 2010
- Infineon Technologies AG
- Georg Tempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus improving gate oxide reliability by controllin...
- Publication number 20070069291
- Publication date Mar 29, 2007
- Michael A. Stuber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Field effect transistor and semiconductor device
- Publication number 20070018277
- Publication date Jan 25, 2007
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lanthanide oxide/hafnium oxide dielectric layers
- Publication number 20060261397
- Publication date Nov 23, 2006
- Micron Technology, Inc.
- Kie Y. Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductors bonded on glass substrates
- Publication number 20060263994
- Publication date Nov 23, 2006
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060226486
- Publication date Oct 12, 2006
- Masahiko Kasuga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-on-sapphire semiconductor device with shallow lightly-doped...
- Publication number 20060138543
- Publication date Jun 29, 2006
- Koichi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component with stress-carrying semiconductor layer an...
- Publication number 20060118867
- Publication date Jun 8, 2006
- Georg Tempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-temperature devices on insulator substrates
- Publication number 20060091379
- Publication date May 4, 2006
- Chriswell G. Hutchens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20060079031
- Publication date Apr 13, 2006
- Hidetsugu Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-temperature memory systems
- Publication number 20050195627
- Publication date Sep 8, 2005
- Chriswell G. Hutchens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistors on insulator substrates
- Publication number 20050179483
- Publication date Aug 18, 2005
- Chriswell G. Hutchens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing semiconductor device
- Publication number 20050104134
- Publication date May 19, 2005
- Juri Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lanthanide oxide / hafnium oxide dielectric layers
- Publication number 20050029547
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Kie Y. Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ultra-thin semiconductors bonded on glass substrates
- Publication number 20050023612
- Publication date Feb 3, 2005
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS

SOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus improving gate oxide reliability by controllin...

Display device having an electric field infibition film

Recessed channel structure in FDSOI

Method and apparatus improving gate oxide reliability by controllin...

Method and apparatus improving gate oxide reliability by controllin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Display device

Method and apparatus improving gate oxide reliability by controllin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Semiconductor device and manufacturing method for semiconductor device

Method and apparatus for use in improving linearity of MOSFETs usin...

Compound lateral resistor structures for integrated circuitry

Composite substrate and method for manufacturing same

Method and apparatus for use in improving linearity of MOSFETs usin...

Method for producing SOS substrates, and SOS substrate

Body-contact metal-oxide-semiconductor field effect transistor device

Method and apparatus improving gate oxide reliability by controllin...

Grounding of silicon-on-insulator structure

Method and apparatus improving gate oxide reliability by controllin...

8893062

SOS substrate with reduced stress

Semiconductor component with stress-absorbing semiconductor layer

Method and apparatus improving gate oxide reliability by controllin...

Semiconductor device and manufacturing method thereof

Silicon-on-sapphire semiconductor device with shallow lightly-doped...

Production method for semiconductor component with stress-carrying...

Semiconductor device

Semiconductors bonded on glass substrates

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLIN...

METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLIN...

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLIN...

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

Method and Apparatus for use in Improving Linearity of MOSFETs usin...

Method and Apparatus for use in Improving Linearity of MOSFETs usin...

COMPOUND LATERAL RESISTOR STRUCTURES FOR INTEGRATED CIRCUITRY

Method and Apparatus Improving Gate Oxide Reliability by Controllin...

GROUNDING OF SILICON-ON-INSULATOR STRUCTURE

Method and Apparatus Improving Gate Oxide Reliability by Controllin...

SOS SUBSTRATE WITH REDUCED STRESS

HIGH-TEMPERATURE DEVICES ON INSULATOR SUBSTRATES

Method and Apparatus Improving Gate Oxide Reliability by Controllin...

SEMICONDUCTOR COMPONENT WITH STRESS-ABSORBING SEMICONDUCTOR LAYER,...

Method and apparatus improving gate oxide reliability by controllin...

Field effect transistor and semiconductor device

Lanthanide oxide/hafnium oxide dielectric layers

Semiconductors bonded on glass substrates

Semiconductor device

Silicon-on-sapphire semiconductor device with shallow lightly-doped...

Semiconductor component with stress-carrying semiconductor layer an...

High-temperature devices on insulator substrates

Semiconductor device and manufacturing method thereof

High-temperature memory systems

High-voltage transistors on insulator substrates

Semiconductor device and method for manufacturing semiconductor device

Lanthanide oxide / hafnium oxide dielectric layers

Ultra-thin semiconductors bonded on glass substrates