Special or nonstandard dopant

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CPC
Y10S438/918

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

Current Industry

Y10S438/918Special or nonstandard dopant

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Tunneling field effect transistor (TFET) formed by asymmetric ion i...
- Patent number 9,431,252
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying Zhang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and manufacturing method thereof
- Patent number 9,243,345
- Issue date Jan 26, 2016
- Sumco Corporation
- Toshiaki Ono
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Tunneling field effect transistor (TFET) formed by asymmetric ion i...
- Patent number 8,993,425
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying Zhang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and manufacturing method thereof
- Patent number 8,890,291
- Issue date Nov 18, 2014
- Sumco Corporation
- Toshiaki Ono
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Penetrating implant for forming a semiconductor device
- Patent number 8,741,720
- Issue date Jun 3, 2014
- Intel Corporation
- Giuseppe Curello
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Penetrating implant for forming a semiconductor device
- Patent number 8,426,927
- Issue date Apr 23, 2013
- Intel Corporation
- Giuseppe Curello
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Penetrating implant for forming a semiconductor device
- Patent number 7,943,468
- Issue date May 17, 2011
- Intel Corporation
- Giuseppe Curello
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
ZnO layer and semiconductor light emitting device
- Patent number 7,728,347
- Issue date Jun 1, 2010
- Stanley Electric Co., Ltd.
- Akio Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective heating using flash anneal
- Patent number 7,507,667
- Issue date Mar 24, 2009
- WaferMasters, Inc.
- Woo Sik Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation with multiple concentration levels
- Patent number 7,495,347
- Issue date Feb 24, 2009
- Xerox Corporation
- Alan D. Raisanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping method, doping apparatus, and control system for doping appa...
- Patent number 7,361,912
- Issue date Apr 22, 2008
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective heating using flash anneal
- Patent number 7,276,457
- Issue date Oct 2, 2007
- WaferMasters, Inc.
- Woo Sik Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for controlling metal formation processes using ion implanta...
- Patent number 7,214,614
- Issue date May 8, 2007
- Micron Technology, Inc.
- Dinesh Chopra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 7,186,631
- Issue date Mar 6, 2007
- Hynix Semiconductor Inc.
- Seung Woo Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of production of nano particle dispersed composite material
- Patent number 7,041,530
- Issue date May 9, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masahiro Nunoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping method, doping apparatus, and control system for doping appa...
- Patent number 6,960,498
- Issue date Nov 1, 2005
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a p-channel field-effect transistor on a sem...
- Patent number 6,943,116
- Issue date Sep 13, 2005
- Infineon Technologies AG
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition method for Si-Ge epi layer on different intermediate sub...
- Patent number 6,936,530
- Issue date Aug 30, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation with multiple concentration levels
- Patent number 6,927,153
- Issue date Aug 9, 2005
- Xerox Corporation
- Alan D. Raisanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective heating using flash anneal
- Patent number 6,911,376
- Issue date Jun 28, 2005
- WaferMasters
- Woo Sik Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling metal formation processes using ion implantat...
- Patent number 6,727,175
- Issue date Apr 27, 2004
- Micron Technology, Inc.
- Dinesh Chopra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,562,686
- Issue date May 13, 2003
- Hynix Semiconductor Inc.
- Hi Deok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium phosphide luminescent device
- Patent number 6,479,312
- Issue date Nov 12, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masato Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage, low capacitance isolation material
- Patent number 6,465,370
- Issue date Oct 15, 2002
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface texturing for light-emitting device
- Patent number 6,410,348
- Issue date Jun 25, 2002
- United Epitaxxy Company, Ltd.
- Tzer-Perng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor constructions
- Patent number 6,242,781
- Issue date Jun 5, 2001
- Micron Technology, Inc.
- Shubneesh Batra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for establishing shallow junction in semiconductor device to...
- Patent number 6,204,157
- Issue date Mar 20, 2001
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing compound semiconductor
- Patent number 6,191,014
- Issue date Feb 20, 2001
- Sumitomo Chemical Company, Ltd.
- Yuichi Sasajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for a discrete structure substrate
- Patent number 6,093,648
- Issue date Jul 25, 2000
- Naoetsu Electronics Company
- Tsutomu Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ultra-shallow p-type junction having reduced sheet resistance and m...
- Patent number 6,063,682
- Issue date May 16, 2000
- Advanced Micro Devices, Inc.
- Akif Sultan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Tunneling Field Effect Transistor (TFET) Formed By Asymmetric Ion I...
- Publication number 20140170827
- Publication date Jun 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20130224926
- Publication date Aug 29, 2013
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND MANUFACTURING METHOD
- Publication number 20120043644
- Publication date Feb 23, 2012
- SUMCO CORPORATION
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20110215422
- Publication date Sep 8, 2011
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20090242998
- Publication date Oct 1, 2009
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20090236598
- Publication date Sep 24, 2009
- Stanley Electric Co., Ltd
- Akio OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE HEATING USING FLASH ANNEAL
- Publication number 20070207612
- Publication date Sep 6, 2007
- Woo Sik Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device
- Publication number 20060141690
- Publication date Jun 29, 2006
- HYNIX SEMICONDUCTOR INC.
- Seung Woo Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping method, doping apparatus, and control system for doping appa...
- Publication number 20060005768
- Publication date Jan 12, 2006
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion implantation with multiple concentration levels
- Publication number 20050245056
- Publication date Nov 3, 2005
- Xerox Corporation.
- Alan D. Raisanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL DEPOSITION METHOD FOR SI-GE EPI LAYER ON DIFFERENT INTERMEDIA...
- Publication number 20050176229
- Publication date Aug 11, 2005
- Taiwan Semiconductor Manufacturing Co.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A P-CHANNEL FIELD-EFFECT TRANSISTOR ON A SEM...
- Publication number 20050148178
- Publication date Jul 7, 2005
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective heating using flash anneal
- Publication number 20050142875
- Publication date Jun 30, 2005
- Woo Sik Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE HEATING USING FLASH ANNEAL
- Publication number 20050074951
- Publication date Apr 7, 2005
- Woo Sik Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of production of nano particle dispersed composite material
- Publication number 20050042386
- Publication date Feb 24, 2005
- Masahiro Nunoshita
- B82 - NANO-TECHNOLOGY
Information Patent Application
Ion implantation with multiple concentration levels
- Publication number 20040164379
- Publication date Aug 26, 2004
- Xerox Corporation.
- Alan D. Raisanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of controlling metal formation processes using ion implantat...
- Publication number 20040072424
- Publication date Apr 15, 2004
- Micron Technology,Inc.
- Dinesh Chopra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of controlling metal formation processes using ion implantat...
- Publication number 20040023489
- Publication date Feb 5, 2004
- Dinesh Chopra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping method, doping apparatus, and control system for doping appa...
- Publication number 20040005745
- Publication date Jan 8, 2004
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for frabricating semiconductor device
- Publication number 20020140029
- Publication date Oct 3, 2002
- Hi Deok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low leakage capacitance isolation material
- Publication number 20020025622
- Publication date Feb 28, 2002
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS

Special or nonstandard dopant

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Tunneling field effect transistor (TFET) formed by asymmetric ion i...

Silicon wafer and manufacturing method thereof

Tunneling field effect transistor (TFET) formed by asymmetric ion i...

Silicon wafer and manufacturing method thereof

Penetrating implant for forming a semiconductor device

Penetrating implant for forming a semiconductor device

Penetrating implant for forming a semiconductor device

ZnO layer and semiconductor light emitting device

Selective heating using flash anneal

Ion implantation with multiple concentration levels

Doping method, doping apparatus, and control system for doping appa...

Selective heating using flash anneal

System for controlling metal formation processes using ion implanta...

Method for manufacturing a semiconductor device

Method of production of nano particle dispersed composite material

Doping method, doping apparatus, and control system for doping appa...

Method for fabricating a p-channel field-effect transistor on a sem...

Deposition method for Si-Ge epi layer on different intermediate sub...

Ion implantation with multiple concentration levels

Selective heating using flash anneal

Method of controlling metal formation processes using ion implantat...

Method for fabricating semiconductor device

Gallium phosphide luminescent device

Low leakage, low capacitance isolation material

Interface texturing for light-emitting device

Resistor constructions

Method for establishing shallow junction in semiconductor device to...

Method for manufacturing compound semiconductor

Production method for a discrete structure substrate

Ultra-shallow p-type junction having reduced sheet resistance and m...

Patents Applicationslast 30 patents

Tunneling Field Effect Transistor (TFET) Formed By Asymmetric Ion I...

PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE

SILICON WAFER AND MANUFACTURING METHOD

PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE

PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE

ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE

SELECTIVE HEATING USING FLASH ANNEAL

Method for manufacturing a semiconductor device

Doping method, doping apparatus, and control system for doping appa...

Ion implantation with multiple concentration levels

NOVEL DEPOSITION METHOD FOR SI-GE EPI LAYER ON DIFFERENT INTERMEDIA...

METHOD FOR FABRICATING A P-CHANNEL FIELD-EFFECT TRANSISTOR ON A SEM...

Selective heating using flash anneal

SELECTIVE HEATING USING FLASH ANNEAL

Method of production of nano particle dispersed composite material

Ion implantation with multiple concentration levels

Method of controlling metal formation processes using ion implantat...

Method of controlling metal formation processes using ion implantat...

Doping method, doping apparatus, and control system for doping appa...

Method for frabricating semiconductor device

Low leakage capacitance isolation material