specially strained cladding layers, other than for strain compensation

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/3218specially strained cladding layers, other than for strain compensation

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Patents Grantslast 30 patents

Information Patent Grant
Mid-infrared vertical cavity laser
- Patent number 11,289,876
- Issue date Mar 29, 2022
- Thorlabs, Inc.
- Vijaysekhar Jayaraman
- G01 - MEASURING TESTING
Information Patent Grant
Structure comprising a strained semiconductor layer on a heat sink
- Patent number 11,165,220
- Issue date Nov 2, 2021
- STMicroelectronics (Crolles 2) SAS
- Anas Elbaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mid-infrared vertical cavity laser
- Patent number 10,714,893
- Issue date Jul 14, 2020
- Thorlabs, Inc.
- Vijaysekhar Jayaraman
- G01 - MEASURING TESTING
Information Patent Grant
Optical semiconductor device, optical subassembly, and optical module
- Patent number 10,312,665
- Issue date Jun 4, 2019
- Oclaro Japan, Inc.
- Takeshi Kitatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and quantum cascade laser using the same
- Patent number 10,038,306
- Issue date Jul 31, 2018
- SHARP KABUSHIKI KAISHA
- Teruhisa Kotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of p-type cladding regions using nitrogen gas for...
- Patent number 9,564,736
- Issue date Feb 7, 2017
- Soraa Laser Diode, Inc.
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 9,077,154
- Issue date Jul 7, 2015
- Kabushiki Kaisha Toshiba
- Shigeyuki Takagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 8,993,999
- Issue date Mar 31, 2015
- Kabushiki Kaisha Toshiba
- Shigeyuki Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 8,759,812
- Issue date Jun 24, 2014
- Kabushiki Kaisha Toshiba
- Shigeyuki Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer structure with superlattice
- Patent number 8,471,240
- Issue date Jun 25, 2013
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optoelectronic devices
- Patent number 8,054,862
- Issue date Nov 8, 2011
- University of Seoul Industry Cooperation Foundation
- Doyeol Ahn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical cavity surface emitting laser (VCSEL), VCSEL array device,...
- Patent number 7,991,033
- Issue date Aug 2, 2011
- Ricoh Company, Ltd.
- Kei Hara
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 7,940,827
- Issue date May 10, 2011
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor layer structure with superlattice
- Patent number 7,893,424
- Issue date Feb 22, 2011
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 7,519,095
- Issue date Apr 14, 2009
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,456,422
- Issue date Nov 25, 2008
- Fujitsu Limited
- Ayahito Uetake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity surface-emission type laser diode and fabrication p...
- Patent number 7,260,137
- Issue date Aug 21, 2007
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 7,022,539
- Issue date Apr 4, 2006
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 6,674,785
- Issue date Jan 6, 2004
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device
- Patent number 6,233,266
- Issue date May 15, 2001
- Sony Corporation
- Takayuki Kawasumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-sustained pulsation semiconductor laser
- Patent number 6,160,829
- Issue date Dec 12, 2000
- NEC Corporation
- Hiroyuki Sawano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser
- Patent number 6,151,348
- Issue date Nov 21, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,141,364
- Issue date Oct 31, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,081,541
- Issue date Jun 27, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,072,817
- Issue date Jun 6, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light emitting device having a defect inhibition layer
- Patent number 5,838,705
- Issue date Nov 17, 1998
- Motorola, Inc.
- Chang-Long Shieh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device
- Patent number 5,555,271
- Issue date Sep 10, 1996
- Sanyo Electric Co., Ltd.
- Shoji Honda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser
- Patent number 5,408,487
- Issue date Apr 18, 1995
- Fujitsu Limited
- Toru Uchida
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device
- Patent number 5,282,218
- Issue date Jan 25, 1994
- Kabushiki Kaisha Toshiba
- Masaki Okajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained superlattice semiconductor structure
- Patent number 5,181,086
- Issue date Jan 19, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Naohito Yoshida
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
STRAIN-ENGINEERED CLADDING LAYER FOR OPTIMIZED ACTIVE REGION STRAIN...
- Publication number 20220368108
- Publication date Nov 17, 2022
- nLIGHT, Inc.
- Zhigang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MID-INFRARED VERTICAL CAVITY LASER
- Publication number 20200343687
- Publication date Oct 29, 2020
- THORLABS, INC.
- Vijaysekhar Jayaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MID-INFRARED VERTICAL CAVITY LASER
- Publication number 20190044304
- Publication date Feb 7, 2019
- THORLABS, INC.
- Vijaysekhar Jayaraman
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20140241389
- Publication date Aug 28, 2014
- Kabushiki Kaisha Toshiba
- Shigeyuki Takagi
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20140241390
- Publication date Aug 28, 2014
- Kabushiki Kaisha Toshiba
- Shigeyuki Takagi
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20120181504
- Publication date Jul 19, 2012
- Kabushiki Kaisha Toshiba
- Shigeyuki Takagi
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE
- Publication number 20110168977
- Publication date Jul 14, 2011
- Osram Opto Semiconductors GmbH, a Germany corporation
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Application
OPTOELECTRONIC DEVICES
- Publication number 20100040102
- Publication date Feb 18, 2010
- UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION
- Doyeol AHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL), VCSEL ARRAY DEVICE,...
- Publication number 20090296768
- Publication date Dec 3, 2009
- RICOH COMPANY, LTD.
- Kei HARA
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION...
- Publication number 20090168828
- Publication date Jul 2, 2009
- RICOH COMPANY, LTD.,
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080298412
- Publication date Dec 4, 2008
- ATSUSHI NAKAMURA
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE
- Publication number 20080054247
- Publication date Mar 6, 2008
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical-cavity, surface-emission type laser diode and fabrication...
- Publication number 20070263689
- Publication date Nov 15, 2007
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device
- Publication number 20060220001
- Publication date Oct 5, 2006
- FUJITSU LIMITED
- Ayahito Uetake
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical-cavity surface-emission type laser diode and fabrication p...
- Publication number 20060134817
- Publication date Jun 22, 2006
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical-cavity, surface-emission type laser diode and fabrication...
- Publication number 20040065888
- Publication date Apr 8, 2004
- RICOH COMPANY, LTD.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Verticle-cavity, surface-emission type laser diode and fabrication...
- Publication number 20020074631
- Publication date Jun 20, 2002
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY

specially strained cladding layers, other than for strain compensation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Mid-infrared vertical cavity laser

Structure comprising a strained semiconductor layer on a heat sink

Mid-infrared vertical cavity laser

Optical semiconductor device, optical subassembly, and optical module

Nitride semiconductor device and quantum cascade laser using the same

Epitaxial growth of p-type cladding regions using nitrogen gas for...

Semiconductor light emitting device and method for manufacturing same

Semiconductor light emitting device and method for manufacturing same

Semiconductor light emitting device and method for manufacturing same

Semiconductor layer structure with superlattice

Optoelectronic devices

Vertical cavity surface emitting laser (VCSEL), VCSEL array device,...

Vertical-cavity, surface-emission type laser diode and fabrication...

Semiconductor layer structure with superlattice

Vertical-cavity, surface-emission type laser diode and fabrication...

Semiconductor device

Vertical-cavity surface-emission type laser diode and fabrication p...

Vertical-cavity, surface-emission type laser diode and fabrication...

Vertical-cavity, surface-emission type laser diode and fabrication...

Light emitting device

Self-sustained pulsation semiconductor laser

Semiconductor laser

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Light emitting device having a defect inhibition layer

Semiconductor laser device

Semiconductor laser

Semiconductor laser device

Strained superlattice semiconductor structure

Patents Applicationslast 30 patents

STRAIN-ENGINEERED CLADDING LAYER FOR OPTIMIZED ACTIVE REGION STRAIN...

MID-INFRARED VERTICAL CAVITY LASER

MID-INFRARED VERTICAL CAVITY LASER

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE

OPTOELECTRONIC DEVICES

VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL), VCSEL ARRAY DEVICE,...

VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION...

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE

Vertical-cavity, surface-emission type laser diode and fabrication...

Semiconductor device

Vertical-cavity surface-emission type laser diode and fabrication p...

Vertical-cavity, surface-emission type laser diode and fabrication...

Verticle-cavity, surface-emission type laser diode and fabrication...