Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers

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H01F10/3295

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3295Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Material having both negative spin polarization and negative anisot...
- Patent number 11,683,993
- Issue date Jun 20, 2023
- Western Digital Technologies, Inc.
- Susumu Okamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistive effect element and magnetic memory
- Patent number 11,264,290
- Issue date Mar 1, 2022
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and manufacturing method of the same
- Patent number 11,069,850
- Issue date Jul 20, 2021
- TOSHIBA MEMORY CORPORATION
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance element with increased operational range
- Patent number 11,022,661
- Issue date Jun 1, 2021
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Hybrid oxide/metal cap layer for boron-free free layer
- Patent number 11,009,570
- Issue date May 18, 2021
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensor
- Patent number 10,983,181
- Issue date Apr 20, 2021
- TDK Corporation
- Kenichi Takano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Varying energy barriers of magnetic tunnel junctions (MTJs) in diff...
- Patent number 10,811,068
- Issue date Oct 20, 2020
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 10,763,428
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having an adjustable magnetostriction and...
- Patent number 10,665,774
- Issue date May 26, 2020
- Sebastien Bandiera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic junction device having an inter-layer stack between a hard...
- Patent number 10,573,688
- Issue date Feb 25, 2020
- Imec VZW
- Johan Swerts
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect device
- Patent number 10,483,458
- Issue date Nov 19, 2019
- TDK Corporation
- Junichiro Urabe
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic diffusion barriers and filter in PSTTM MTJ construction
- Patent number 10,403,811
- Issue date Sep 3, 2019
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog-to-digital conversion with magnetic tunnel junctions
- Patent number 10,200,058
- Issue date Feb 5, 2019
- SanDisk Technologies LLC
- Won Ho Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,103,321
- Issue date Oct 16, 2018
- Kabushiki Kaisha Toshiba
- Yushi Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 9,842,988
- Issue date Dec 12, 2017
- Headway Technologies, Inc.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensor
- Patent number 9,823,315
- Issue date Nov 21, 2017
- Denso Corporation
- Toshifumi Yano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element and memory device
- Patent number 9,818,464
- Issue date Nov 14, 2017
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Side shielded magnetoresistive (MR) read head with perpendicular ma...
- Patent number 9,761,254
- Issue date Sep 12, 2017
- Headway Technologies, Inc.
- Yuchen Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory device
- Patent number 9,722,173
- Issue date Aug 1, 2017
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic tunnel junction element and method of driving ferroma...
- Patent number 9,680,088
- Issue date Jun 13, 2017
- III HOLDINGS 3, LLC
- Takuya Ono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
CoFe/Ni multilayer film with perpendicular anisotropy for microwave...
- Patent number 9,558,765
- Issue date Jan 31, 2017
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Side shielded magnetoresistive (MR) read head with perpendicular ma...
- Patent number 9,520,147
- Issue date Dec 13, 2016
- Headway Technologies, Inc.
- Yuchen Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High thermal stability reference structure with out-of-plane anisot...
- Patent number 9,472,752
- Issue date Oct 18, 2016
- Headway Technologies, Inc.
- Yu-Jen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making a high thermal stability reference structure with...
- Patent number 9,466,789
- Issue date Oct 11, 2016
- Headway Technologies, Inc.
- Yu-Jen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Free layer with out-of-plane anisotropy for magnetic device applica...
- Patent number 9,437,268
- Issue date Sep 6, 2016
- Headway Technologies, Inc.
- Yu-Jen Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element and magnetic random access memory u...
- Patent number 9,379,312
- Issue date Jun 28, 2016
- NEC Corporation
- Tadahiko Sugibayashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
CoFe/Ni multilayer film with perpendicular anisotropy for microwave...
- Patent number 9,349,396
- Issue date May 24, 2016
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Free layer with out-of-plane anisotropy for magnetic device applica...
- Patent number 9,252,710
- Issue date Feb 2, 2016
- Headway Technologies, Inc.
- Yu-Jen Wang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER
- Publication number 20200158796
- Publication date May 21, 2020
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC SENSOR
- Publication number 20200132786
- Publication date Apr 30, 2020
- TDK Corporation
- Kenichi TAKANO
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20190333819
- Publication date Oct 31, 2019
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFF...
- Publication number 20190147930
- Publication date May 16, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFF...
- Publication number 20190066746
- Publication date Feb 28, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING AN ADJUSTABLE MAGNETOSTRICTION AND...
- Publication number 20190036015
- Publication date Jan 31, 2019
- CROCUS TECHNOLOGY SA
- Sebastien Bandiera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE
- Publication number 20180277749
- Publication date Sep 27, 2018
- TDK Corporation
- Junichiro URABE
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20180175287
- Publication date Jun 21, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, AND MAGNETIC RECORDING AND...
- Publication number 20140334029
- Publication date Nov 13, 2014
- Kabushiki Kaisha Toshiba
- Naoki HASE
- G01 - MEASURING TESTING
Information Patent Application
CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HA...
- Publication number 20140335377
- Publication date Nov 13, 2014
- HGST NETHERLANDS B.V.
- Hardayal S. Gill
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220385
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220708
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- Publication number 20140153139
- Publication date Jun 5, 2014
- Kabushiki Kaisha Toshiba
- Akihiko TAKEO
- B82 - NANO-TECHNOLOGY
Information Patent Application
Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applica...
- Publication number 20140145792
- Publication date May 29, 2014
- HEADWAY TECHNOLOGIES, INC.
- Yu-Jen Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Device with Synthetic Free Layer Structure
- Publication number 20140138783
- Publication date May 22, 2014
- HEADWAY TECHNOLOGIES, INC.
- Tong Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...
- Publication number 20140110803
- Publication date Apr 24, 2014
- The Board of Trustees of the University of Alabama for and on behalf of the U...
- Dmytro Apalkov
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE-BASED MIXED ANISOTROPY HIGH FIELD SENSOR
- Publication number 20140098443
- Publication date Apr 10, 2014
- NVE Corporation
- Joseph E. Davies
- G01 - MEASURING TESTING
Information Patent Application
SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING...
- Publication number 20140015078
- Publication date Jan 16, 2014
- AVALANCHE TECHNOLOGY INC.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
PERPENDICULAR STTMRAM DEVICE WITH BALANCED REFERENCE LAYER
- Publication number 20140015076
- Publication date Jan 16, 2014
- AVALANCHE TECHNOLOGY INC.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic devices having perpendicular magnetic tunnel junction
- Publication number 20130307102
- Publication date Nov 21, 2013
- Sechung Oh
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Tunnel Junction for MRAM Applications
- Publication number 20130299823
- Publication date Nov 14, 2013
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Application
TMR Device with Low Magnetoresistive Free Layer
- Publication number 20130277780
- Publication date Oct 24, 2013
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Free Layer with High Thermal Stability for Magnetic Device Applicat...
- Publication number 20130270523
- Publication date Oct 17, 2013
- HEADWAY TECHNOLOGIES, INC.
- Yu-Jen Wang
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE MEMORY
- Publication number 20130249026
- Publication date Sep 26, 2013
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...
- Publication number 20130236639
- Publication date Sep 12, 2013
- Matthew J. Carey
- G01 - MEASURING TESTING
Information Patent Application
CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WI...
- Publication number 20130236744
- Publication date Sep 12, 2013
- Elizabeth Ann Brinkman
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACK HAVING ASSIST LAYERS
- Publication number 20130228884
- Publication date Sep 5, 2013
- SEAGATE TECHNOLOGY LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
High Thermal Stability Free Layer with High Out-of-Plane Anisotropy...
- Publication number 20130230741
- Publication date Sep 5, 2013
- HEADWAY TECHNOLOGIES, INC.
- Yu-Jen Wang
- G01 - MEASURING TESTING

Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Material having both negative spin polarization and negative anisot...

Magnetic tunnel junction with low defect rate after high temperatur...

Tunnel magnetoresistive effect element and magnetic memory

Magnetic memory device and manufacturing method of the same

Magnetoresistance element with increased operational range

Hybrid oxide/metal cap layer for boron-free free layer

Magnetic sensor

Varying energy barriers of magnetic tunnel junctions (MTJs) in diff...

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetoresistive element having an adjustable magnetostriction and...

Magnetic junction device having an inter-layer stack between a hard...

Magnetoresistive effect device

Magnetic diffusion barriers and filter in PSTTM MTJ construction

Analog-to-digital conversion with magnetic tunnel junctions

Magnetoresistive element and magnetic memory

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic sensor

Magnetic memory element and memory device

Side shielded magnetoresistive (MR) read head with perpendicular ma...

Memory device

Ferromagnetic tunnel junction element and method of driving ferroma...

CoFe/Ni multilayer film with perpendicular anisotropy for microwave...

Side shielded magnetoresistive (MR) read head with perpendicular ma...

High thermal stability reference structure with out-of-plane anisot...

Method of making a high thermal stability reference structure with...

Free layer with out-of-plane anisotropy for magnetic device applica...

Magnetoresistive effect element and magnetic random access memory u...

CoFe/Ni multilayer film with perpendicular anisotropy for microwave...

Free layer with out-of-plane anisotropy for magnetic device applica...

Patents Applicationslast 30 patents

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER

MAGNETIC SENSOR

TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFF...

VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFF...

MAGNETORESISTIVE ELEMENT HAVING AN ADJUSTABLE MAGNETOSTRICTION AND...

MAGNETORESISTIVE EFFECT DEVICE

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, AND MAGNETIC RECORDING AND...

CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HA...

MR Enhancing Layer (MREL) For Spintronic Devices

MR Enhancing Layer (MREL) For Spintronic Devices

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applica...

MR Device with Synthetic Free Layer Structure

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...

MAGNETORESISTIVE-BASED MIXED ANISOTROPY HIGH FIELD SENSOR

SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING...

PERPENDICULAR STTMRAM DEVICE WITH BALANCED REFERENCE LAYER

Magnetic devices having perpendicular magnetic tunnel junction

Magnetic Tunnel Junction for MRAM Applications

TMR Device with Low Magnetoresistive Free Layer

Free Layer with High Thermal Stability for Magnetic Device Applicat...

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE MEMORY

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...

CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WI...

MAGNETIC STACK HAVING ASSIST LAYERS

High Thermal Stability Free Layer with High Out-of-Plane Anisotropy...