Stirring of the melt

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CPC
C30B15/305

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

Current Industry

C30B15/305Stirring of the melt

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Systems for production of low oxygen content silicon
- Patent number 12,037,699
- Issue date Jul 16, 2024
- GlobalWafers Co., Ltd.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems and methods for production of low oxygen content silicon
- Patent number 11,668,020
- Issue date Jun 6, 2023
- GlobalWafers Co., Ltd.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,559
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,560
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing single crystalline ingot and method for growi...
- Patent number 11,214,891
- Issue date Jan 4, 2022
- SK SILTRON CO., LTD.
- Do-Won Song
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,142,844
- Issue date Oct 12, 2021
- GlobalWafers Co., Ltd.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for production of low oxygen content silicon
- Patent number 11,136,691
- Issue date Oct 5, 2021
- GlobalWafers Co., Ltd.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,968,535
- Issue date Apr 6, 2021
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial silicon wafer
- Patent number 10,861,990
- Issue date Dec 8, 2020
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a semiconductor wafer of monocrystalline silic...
- Patent number 10,844,513
- Issue date Nov 24, 2020
- Siltronic AG
- Walter Heuwieser
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems and methods for production of low oxygen content silicon
- Patent number 10,745,823
- Issue date Aug 18, 2020
- GlobalWafers Co., Ltd.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer with homogeneous radial oxygen variation
- Patent number 10,731,271
- Issue date Aug 4, 2020
- Siltronic AG
- Karl Mangelberger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growing apparatus and single-crystal ingot growing method using the...
- Patent number 10,655,242
- Issue date May 19, 2020
- SK SILTRON CO., LTD.
- In Gu Kang
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,640,885
- Issue date May 5, 2020
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for producing low oxygen silicon ingots
- Patent number 10,513,796
- Issue date Dec 24, 2019
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing single crystalline ingot and method for growi...
- Patent number 10,435,809
- Issue date Oct 8, 2019
- SK SILTRON CO., LTD.
- Do-Won Song
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for growing silicon single crystal ingot
- Patent number 10,344,395
- Issue date Jul 9, 2019
- SK SILTRON CO., LTD.
- Young Ho Hong
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal pulling apparatus and single-crystal pulling method
- Patent number 10,253,425
- Issue date Apr 9, 2019
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a silicon crystal substrate from a melt by direc...
- Patent number 10,106,911
- Issue date Oct 23, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Frederick M. Carlson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for producing low oxygen silicon ingots
- Patent number 9,951,440
- Issue date Apr 24, 2018
- SunEdison Semiconductor Limited
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing silicon single crystal
- Patent number 9,938,634
- Issue date Apr 10, 2018
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal production apparatus
- Patent number 9,938,636
- Issue date Apr 10, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhira Abe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon single crystal
- Patent number 9,885,122
- Issue date Feb 6, 2018
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Soeta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stirring apparatus of ingot casting furnace
- Patent number 9,708,727
- Issue date Jul 18, 2017
- GLOBALWAFERS CO., LTD.
- Lu-Chung Chuang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal and method for manufa...
- Patent number 9,617,655
- Issue date Apr 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal manufacturing method and single-crystal manufacturin...
- Patent number 9,200,380
- Issue date Dec 1, 2015
- Shin-Etsu Handotai Co., Ltd.
- Suguru Matsumoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Generating a homogeneous magnetic field while pulling a single crys...
- Patent number 9,127,377
- Issue date Sep 8, 2015
- Babcock Noell GmbH
- Wolfgang Walter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of producing SiC single crystal
- Patent number 9,080,254
- Issue date Jul 14, 2015
- Toyota Jidosha Kabushiki Kaisha
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal production method
- Patent number 9,051,661
- Issue date Jun 9, 2015
- Siltronic AG
- Shinichi Kyufu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a single crystal composed of silicon with a sect...
- Patent number 8,906,157
- Issue date Dec 9, 2014
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
- Publication number 20240247402
- Publication date Jul 25, 2024
- GLOBALWAFERS CO., LTD.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
- Publication number 20230250551
- Publication date Aug 10, 2023
- GLOBALWAFERS CO., LTD.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PULLING A SINGLE CRYSTAL OF SILICON IN ACCORDANCE WITH T...
- Publication number 20220259762
- Publication date Aug 18, 2022
- Siltronic AG
- Karl MANGELBERGER
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20220056616
- Publication date Feb 24, 2022
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20210404088
- Publication date Dec 30, 2021
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
- Publication number 20210348298
- Publication date Nov 11, 2021
- GLOBALWAFERS CO., LTD.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
- Publication number 20200392643
- Publication date Dec 17, 2020
- GLOBALWAFERS CO., LTD.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20200216975
- Publication date Jul 9, 2020
- GlobalWafers Co., Ltd
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER WITH HOMOGENEOUS RADIAL OXYGEN VARIATION
- Publication number 20200149184
- Publication date May 14, 2020
- Siltronic AG
- Karl MANGELBERGER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILIC...
- Publication number 20190136404
- Publication date May 9, 2019
- Siltronic AG
- Walter HEUWIESER
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20180312996
- Publication date Nov 1, 2018
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi DOI
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD
- Publication number 20180237940
- Publication date Aug 23, 2018
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka TAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS
- Publication number 20180237938
- Publication date Aug 23, 2018
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFA...
- Publication number 20170226658
- Publication date Aug 10, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Yutaka KISHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMAL LOAD LEVELING USING ANISOTROPIC MATERIALS
- Publication number 20170037535
- Publication date Feb 9, 2017
- Frederick M. Carlson
- C30 - CRYSTAL GROWTH
Information Patent Application
Generating a Homogeneous Magnetic Field While Pulling a Single Crys...
- Publication number 20140053771
- Publication date Feb 27, 2014
- BABCOCK NOELL GMBH
- Wolfgang Walter
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A...
- Publication number 20130220216
- Publication date Aug 29, 2013
- Siltronic AG
- Piotr Filar
- C30 - CRYSTAL GROWTH
Information Patent Application
ELECTROMAGNETIC MIXING FOR NITRIDE CRYSTAL GROWTH
- Publication number 20130224100
- Publication date Aug 29, 2013
- The Regents of the University of California
- Paul Von Dollen
- C30 - CRYSTAL GROWTH
Information Patent Application
2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPIT...
- Publication number 20120141808
- Publication date Jun 7, 2012
- SILTRON INC.
- Do-Won Song
- C30 - CRYSTAL GROWTH
Information Patent Application
2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPIT...
- Publication number 20120132131
- Publication date May 31, 2012
- SILTRON INC.
- Do-Won Song
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF THREE-DIMENSIONAL OPTIMIZATION DESIGN FOR ASYMMETRIC CUSP...
- Publication number 20120035893
- Publication date Feb 9, 2012
- Xi'an University of Technology
- Ding LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Single Crystal Production Method
- Publication number 20120031323
- Publication date Feb 9, 2012
- Siltronic AG
- Shinichi Kyufu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SIC SINGLE CRYSTAL
- Publication number 20110315073
- Publication date Dec 29, 2011
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR THE SOLIDIFICATION OF A NON-METAL MELT
- Publication number 20110309555
- Publication date Dec 22, 2011
- FORSCHUNGSVERBUND BERLIN E.V.
- Frank Bullesfeld
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing Semiconductor Wafers Composed Of Silicon
- Publication number 20110304081
- Publication date Dec 15, 2011
- Siltronic AG
- Martin Weber
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL MANUFACTURING METHOD AND SINGLE-CRYSTAL MANUFACTURIN...
- Publication number 20110214605
- Publication date Sep 8, 2011
- Shin-Etsu Handotai Co., Ltd.
- Suguru Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Pulling A Single Crystal Composed Of Silicon With A Sect...
- Publication number 20110126757
- Publication date Jun 2, 2011
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERCONDUCTING MAGNET DEVICE FOR SINGLE CRYSTAL PULLING APPARATUS
- Publication number 20110077161
- Publication date Mar 31, 2011
- Kabushiki Kaisha Toshiba
- Shohei Takami
- C30 - CRYSTAL GROWTH
Information Patent Application
Method And An Apparatus For Growing A Silicon Single Crystal From A...
- Publication number 20100288185
- Publication date Nov 18, 2010
- Siltronic AG
- Piotr Filar
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Single Crystal
- Publication number 20100126409
- Publication date May 27, 2010
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH

Stirring of the melt

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Systems for production of low oxygen content silicon

Systems and methods for production of low oxygen content silicon

High resistivity single crystal silicon ingot and wafer having impr...

High resistivity single crystal silicon ingot and wafer having impr...

Apparatus for growing single crystalline ingot and method for growi...

High resistivity single crystal silicon ingot and wafer having impr...

Systems and methods for production of low oxygen content silicon

SiC single crystal production method and production apparatus

Epitaxial silicon wafer

Method for producing a semiconductor wafer of monocrystalline silic...

Systems and methods for production of low oxygen content silicon

Silicon wafer with homogeneous radial oxygen variation

Growing apparatus and single-crystal ingot growing method using the...

SiC single crystal production method and production apparatus

Methods for producing low oxygen silicon ingots

Apparatus for growing single crystalline ingot and method for growi...

Apparatus and method for growing silicon single crystal ingot

Single-crystal pulling apparatus and single-crystal pulling method

Method for growing a silicon crystal substrate from a melt by direc...

Methods for producing low oxygen silicon ingots

Method of producing silicon single crystal

Single crystal production apparatus

Method of manufacturing silicon single crystal

Stirring apparatus of ingot casting furnace

Manufacturing apparatus of SiC single crystal and method for manufa...

Single-crystal manufacturing method and single-crystal manufacturin...

Generating a homogeneous magnetic field while pulling a single crys...

Method of producing SiC single crystal

Silicon single crystal production method

Method for pulling a single crystal composed of silicon with a sect...

Patents Applicationslast 30 patents

SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON

SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON

METHOD FOR PULLING A SINGLE CRYSTAL OF SILICON IN ACCORDANCE WITH T...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON

SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

SILICON WAFER WITH HOMOGENEOUS RADIAL OXYGEN VARIATION

METHOD FOR PRODUCING A SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILIC...

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD

METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS

APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFA...

THERMAL LOAD LEVELING USING ANISOTROPIC MATERIALS

Generating a Homogeneous Magnetic Field While Pulling a Single Crys...

METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A...

ELECTROMAGNETIC MIXING FOR NITRIDE CRYSTAL GROWTH

2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPIT...

2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPIT...

METHOD OF THREE-DIMENSIONAL OPTIMIZATION DESIGN FOR ASYMMETRIC CUSP...

Silicon Single Crystal Production Method

METHOD OF PRODUCING SIC SINGLE CRYSTAL

METHOD FOR THE SOLIDIFICATION OF A NON-METAL MELT

Method For Producing Semiconductor Wafers Composed Of Silicon

SINGLE-CRYSTAL MANUFACTURING METHOD AND SINGLE-CRYSTAL MANUFACTURIN...

Method For Pulling A Single Crystal Composed Of Silicon With A Sect...

SUPERCONDUCTING MAGNET DEVICE FOR SINGLE CRYSTAL PULLING APPARATUS

Method And An Apparatus For Growing A Silicon Single Crystal From A...

Method of Manufacturing Single Crystal