Stored charge erasure

Industry

CPC
Y10S438/972

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

Current Industry

Y10S438/972Stored charge erasure

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Resistance type memory device
- Patent number 8,927,956
- Issue date Jan 6, 2015
- Macronix International Co., Ltd.
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance type memory device and fabricating method and operating...
- Patent number 7,524,722
- Issue date Apr 28, 2009
- Macronix International Co., Ltd.
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Permeable capacitor electrode
- Patent number 7,329,917
- Issue date Feb 12, 2008
- Micron Technology, Inc.
- Robert D. Patraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable capacitor electrode
- Patent number 7,179,706
- Issue date Feb 20, 2007
- Micron Technology, Inc.
- Robert D. Patraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable capacitor electrode
- Patent number 6,784,069
- Issue date Aug 31, 2004
- Micron Technology, Inc.
- Robert D. Patraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device architectures including UV transmissive nitrid...
- Patent number 6,383,870
- Issue date May 7, 2002
- Texas Instruments Incorporated
- Kemal Tamer San
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating flash memory
- Patent number 6,329,246
- Issue date Dec 11, 2001
- United Microelectronics Corp.
- Hao-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device architectures including UV transmissive nitrid...
- Patent number 6,274,900
- Issue date Aug 14, 2001
- Texas Instruments Incorporated
- Kemal Tamer San
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth technique for low noise high electron mobility transistors b...
- Patent number 6,214,678
- Issue date Apr 10, 2001
- Daniel P. Docter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for rapidly discharging plasma etched intercon...
- Patent number 6,077,762
- Issue date Jun 20, 2000
- VLSI Technology, Inc.
- Victor C. Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically formed neuron transister having a floating gate and a co...
- Patent number 5,583,360
- Issue date Dec 10, 1996
- Motorola Inc.
- Scott S. Roth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a vertically formed neuron transistor having a flo...
- Patent number 5,480,820
- Issue date Jan 2, 1996
- Motorola, Inc.
- Scott S. Roth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segment-erasable flash EPROM
- Patent number 5,481,493
- Issue date Jan 2, 1996
- National Semiconductor Corporation
- Albert Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
High density EEPROM cell array which can selectively erase each byt...
- Patent number 5,455,790
- Issue date Oct 3, 1995
- National Semiconductor Corporation
- Michael J. Hart
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a high density EEPROM cell array with improved a...
- Patent number 5,453,393
- Issue date Sep 26, 1995
- National Semiconductor Corporation
- Albert M. Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making supra-passivant grid
- Patent number 5,411,896
- Issue date May 2, 1995
- Delco Electronics Corporation
- Donald D. Spencer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density EEPROM cell array with improved access time and method...
- Patent number 5,402,372
- Issue date Mar 28, 1995
- National Semiconductor Corporation
- Albert M. Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
Segment-erasable flash EPROM
- Patent number 5,397,726
- Issue date Mar 14, 1995
- National Semiconductor Corporation
- Albert Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
High density EEPROM cell array with novel programming scheme and me...
- Patent number 5,379,253
- Issue date Jan 3, 1995
- National Semiconductor Corporation
- Albert Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
Tapering sidewalls of via holes
- Patent number 5,269,880
- Issue date Dec 14, 1993
- Northern Telecom Limited
- Gurvinder Jolly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly compact EPROM and flash EEPROM devices
- Patent number 5,268,318
- Issue date Dec 7, 1993
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of eliminating degradation of a multilayer metallurgy/insula...
- Patent number 5,254,497
- Issue date Oct 19, 1993
- Taiwan Semiconductor Manufacturing Company
- Chwen-Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufactured by using conductive ion implantat...
- Patent number 5,075,240
- Issue date Dec 24, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Yomiyuki Yama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a lens section
- Patent number 4,920,075
- Issue date Apr 24, 1990
- Tokyo Shibaura Denki Kabushiki Kaisha
- Shigeru Morita
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of preventing dielectric degradation or rupture
- Patent number 4,916,082
- Issue date Apr 10, 1990
- Motorola Inc.
- Israel A. Lesk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection using thin nickel fuse
- Patent number 4,801,558
- Issue date Jan 31, 1989
- Texas Instruments Incorporated
- Arturo Simmons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UV erasable EPROM with UV transparent silicon oxynitride coating
- Patent number 4,581,622
- Issue date Apr 8, 1986
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process of producing a semiconductor device
- Patent number 4,532,022
- Issue date Jul 30, 1985
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Discharge device and method for use in processing semiconductor dev...
- Patent number 4,350,866
- Issue date Sep 21, 1982
- Fujitsu Limited
- John J. Zasio
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTANCE TYPE MEMORY DEVICE
- Publication number 20090166604
- Publication date Jul 2, 2009
- Macronix International Co., Ltd.
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE TYPE MEMORY DEVICE AND FABRICATING METHOD AND OPERATING...
- Publication number 20080089111
- Publication date Apr 17, 2008
- Macronix International Co., Ltd.
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Permeable capacitor electrode
- Publication number 20060192239
- Publication date Aug 31, 2006
- Robert D. Patraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Permeable capacitor electrode
- Publication number 20050048734
- Publication date Mar 3, 2005
- Robert D. Patraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device architectures including UV transmissive nitrid...
- Publication number 20010046731
- Publication date Nov 29, 2001
- Kemal Tamer San
- H01 - BASIC ELECTRIC ELEMENTS

Stored charge erasure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistance type memory device

Resistance type memory device and fabricating method and operating...

Permeable capacitor electrode

Permeable capacitor electrode

Permeable capacitor electrode

Semiconductor device architectures including UV transmissive nitrid...

Method for fabricating flash memory

Semiconductor device architectures including UV transmissive nitrid...

Growth technique for low noise high electron mobility transistors b...

Method and apparatus for rapidly discharging plasma etched intercon...

Vertically formed neuron transister having a floating gate and a co...

Method of making a vertically formed neuron transistor having a flo...

Segment-erasable flash EPROM

High density EEPROM cell array which can selectively erase each byt...

Method for forming a high density EEPROM cell array with improved a...

Method of making supra-passivant grid

High density EEPROM cell array with improved access time and method...

Segment-erasable flash EPROM

High density EEPROM cell array with novel programming scheme and me...

Tapering sidewalls of via holes

Highly compact EPROM and flash EEPROM devices

Method of eliminating degradation of a multilayer metallurgy/insula...

Semiconductor device manufactured by using conductive ion implantat...

Method for manufacturing a semiconductor device having a lens section

Method of preventing dielectric degradation or rupture

Electrostatic discharge protection using thin nickel fuse

UV erasable EPROM with UV transparent silicon oxynitride coating

Process of producing a semiconductor device

Discharge device and method for use in processing semiconductor dev...

Patents Applicationslast 30 patents

RESISTANCE TYPE MEMORY DEVICE

RESISTANCE TYPE MEMORY DEVICE AND FABRICATING METHOD AND OPERATING...

Permeable capacitor electrode

Permeable capacitor electrode

Semiconductor device architectures including UV transmissive nitrid...