Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Industry

CPC
G11C2213/51

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/51Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,963,465
- Issue date Apr 16, 2024
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Resetting method of resistive random access memory
- Patent number 11,538,525
- Issue date Dec 27, 2022
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,404,481
- Issue date Aug 2, 2022
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory apparatus including resistive-change material layer
- Patent number 11,329,223
- Issue date May 10, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current delivery and spike mitigation in a memory cell array
- Patent number 11,322,546
- Issue date May 3, 2022
- Intel Corporation
- Shafqat Ahmed
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device structure including tilted sidewall and method for fa...
- Patent number 11,233,196
- Issue date Jan 25, 2022
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and resetting method thereof
- Patent number 11,176,996
- Issue date Nov 16, 2021
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Protuberant contacts for resistive switching devices
- Patent number 11,107,984
- Issue date Aug 31, 2021
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,101,326
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile resistive memory device and manufacturing method thereof
- Patent number 11,101,321
- Issue date Aug 24, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Writam Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,088,206
- Issue date Aug 10, 2021
- SanDisk Tehnologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,069,407
- Issue date Jul 20, 2021
- Kioxia Corporation
- Takayuki Tsukamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 11,043,633
- Issue date Jun 22, 2021
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,018,295
- Issue date May 25, 2021
- Hefei Reliance Memory Limited
- Zhichao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal metastable mixed-conductor memristive devices
- Patent number 11,003,981
- Issue date May 11, 2021
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming resistive memory elements
- Patent number 10,991,882
- Issue date Apr 27, 2021
- Micron Technology, Inc.
- Christopher W. Petz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method having resistive memory crossbar array employing selective b...
- Patent number 10,950,787
- Issue date Mar 16, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory crossbar array employing selective barrier layer g...
- Patent number 10,916,699
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced diffusion in metal electrode for two-terminal memory
- Patent number 10,910,561
- Issue date Feb 2, 2021
- Crossbar, Inc.
- Steven Patrick Maxwell
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,862,028
- Issue date Dec 8, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,847,717
- Issue date Nov 24, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a conductive barrier layer
- Patent number 10,833,262
- Issue date Nov 10, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,825,866
- Issue date Nov 3, 2020
- TOSHIBA MEMORY CORPORATION
- Kunifumi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer selector device with low leakage current
- Patent number 10,825,861
- Issue date Nov 3, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory apparatus including resistive-change material layer
- Patent number 10,811,604
- Issue date Oct 20, 2020
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protuberant contacts for resistive switching devices
- Patent number 10,790,445
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protuberant contacts for resistive switching devices
- Patent number 10,734,579
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having side barriers
- Patent number 10,734,578
- Issue date Aug 4, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20240224821
- Publication date Jul 4, 2024
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20230225227
- Publication date Jul 13, 2023
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220336531
- Publication date Oct 20, 2022
- Kioxia Corporation
- Takuya KONNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20220028454
- Publication date Jan 27, 2022
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20210234093
- Publication date Jul 29, 2021
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL METASTABLE MIXED-CONDUCTOR MEMRISTIVE DEVICES
- Publication number 20210209445
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210074355
- Publication date Mar 11, 2021
- KIOXIA Corporation
- Takayuki TSUKAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20210050516
- Publication date Feb 18, 2021
- 4D-S, LTD
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036220
- Publication date Feb 4, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036219
- Publication date Feb 4, 2021
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY APPARATUS INCLUDING RESISTIVE-CHANGE MATERIAL LAYER
- Publication number 20210020835
- Publication date Jan 21, 2021
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND RESETTING METHOD THEREOF
- Publication number 20210012839
- Publication date Jan 14, 2021
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...
- Publication number 20200303459
- Publication date Sep 24, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200227480
- Publication date Jul 16, 2020
- Toshiba Memory Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Application
PROTUBERANT CONTACTS FOR RESISTIVE SWITCHING DEVICES
- Publication number 20200091427
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CROSSBAR ARRAY EMPLOYING SELECTIVE BARRIER LAYER G...
- Publication number 20200066983
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CROSSBAR ARRAY EMPLOYING SELECTIVE BARRIER LAYER G...
- Publication number 20200066982
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190326512
- Publication date Oct 24, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR IO...
- Publication number 20190319185
- Publication date Oct 17, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING SIDE BARRIERS
- Publication number 20190319186
- Publication date Oct 17, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS
- Publication number 20190288197
- Publication date Sep 19, 2019
- 4D-S, LTD
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288198
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20190288196
- Publication date Sep 19, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288199
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288200
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190259813
- Publication date Aug 22, 2019
- Toshiba Memory Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Application
PROTUBERANT CONTACTS FOR RESISTIVE SWITCHING DEVICES
- Publication number 20190207109
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
PROTUBERANT CONTACTS FOR RESISTIVE SWITCHING DEVICE
- Publication number 20190207110
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...
- Publication number 20190115391
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20190088716
- Publication date Mar 21, 2019
- Toshiba Memory Corporation
- Kunifumi SUZUKI
- G11 - INFORMATION STORAGE

Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Non-volatile memory structure with positioned doping

Non-volatile memory structure with positioned doping

Semiconductor memory device having variable resistance elements pro...

Resetting method of resistive random access memory

Semiconductor memory device having variable resistance elements pro...

Nonvolatile memory apparatus including resistive-change material layer

Current delivery and spike mitigation in a memory cell array

Memory device structure including tilted sidewall and method for fa...

Resistive random access memory and resetting method thereof

Protuberant contacts for resistive switching devices

Methods of forming a phase change memory with vertical cross-point...

Nonvolatile resistive memory device and manufacturing method thereof

Methods of forming a phase change memory with vertical cross-point...

Semiconductor memory device

Resistive memory device having a template layer

Non-volatile memory structure with positioned doping

Two-terminal metastable mixed-conductor memristive devices

Methods of forming resistive memory elements

Method having resistive memory crossbar array employing selective b...

Resistive memory crossbar array employing selective barrier layer g...

Reduced diffusion in metal electrode for two-terminal memory

Resistive memory device having a template layer

Resistive memory device having a template layer

Resistive memory device having a conductive barrier layer

Memory device

Multilayer selector device with low leakage current

Nonvolatile memory apparatus including resistive-change material layer

Protuberant contacts for resistive switching devices

Protuberant contacts for resistive switching devices

Resistive memory device having side barriers

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

TWO-TERMINAL METASTABLE MIXED-CONDUCTOR MEMRISTIVE DEVICES

SEMICONDUCTOR MEMORY DEVICE

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

NONVOLATILE MEMORY APPARATUS INCLUDING RESISTIVE-CHANGE MATERIAL LAYER

RESISTIVE RANDOM ACCESS MEMORY AND RESETTING METHOD THEREOF

METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PROTUBERANT CONTACTS FOR RESISTIVE SWITCHING DEVICES

RESISTIVE MEMORY CROSSBAR ARRAY EMPLOYING SELECTIVE BARRIER LAYER G...

RESISTIVE MEMORY CROSSBAR ARRAY EMPLOYING SELECTIVE BARRIER LAYER G...

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR IO...

RESISTIVE MEMORY DEVICE HAVING SIDE BARRIERS

RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PROTUBERANT CONTACTS FOR RESISTIVE SWITCHING DEVICES

PROTUBERANT CONTACTS FOR RESISTIVE SWITCHING DEVICE

METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...

MEMORY DEVICE