Structure wherein the resistive material being in a transistor

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G11C2213/53Structure wherein the resistive material being in a transistor

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Patents Grantslast 30 patents

Information Patent Grant
Silicon-on-insulator (SOI) circuitry for low-voltage memory bit-lin...
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Systems and methods for dynamically reconfigurable artificial synap...
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Matrix of elementary switches forming a message, associated reading...
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- Issue date Jan 30, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
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Two-terminal reversibly switchable memory device
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- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
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Semiconductor device and method for driving the same
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- Issue date Jan 10, 2023
- Semiconductor Energy Laboratory Co., Ltd.
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Thermally sensitive ionic redox transistor
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- Issue date Sep 20, 2022
- National Technology & Engineering Solutions of Sandia, LLC
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Multi-terminal neuromorphic device
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- International Business Machines Corporation
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Carbon-based volatile and non-volatile memristors
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Drift and noise corrected memristive device
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Information Patent Grant
Electrically actuated switch
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Information Patent Grant
Switching atomic transistor and method for operating same
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- Issue date Feb 22, 2022
- Industry-University Cooperation Foundation Hanyang University
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Information Patent Grant
Nonvolatile memory cells having an embedded selection element and n...
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Information Patent Grant
Phase change device configured to modify a plurality of reconfigura...
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- Issue date Sep 7, 2021
- University of Connecticut
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Information Patent Grant
Two-terminal reversibly switchable memory device
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Information Patent Grant
Switching atomic transistor and method for operating same
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- Issue date Feb 16, 2021
- Industry-University Cooperation Foundation Hanyang University
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Semiconductor devices including auxiliary bit lines
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Multilayer selector device with low leakage current
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- Issue date Nov 3, 2020
- Intel Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for driving the same
- Patent number 10,726,913
- Issue date Jul 28, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Hideki Uochi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated 1T1R RRAM memory cell
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- Issue date Jul 7, 2020
- Intel Corporation
- Elijah V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
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- Issue date Jun 9, 2020
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- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory cell utilizing volatile switching two terminal...
- Patent number 10,658,033
- Issue date May 19, 2020
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Information Patent Grant
Three-terminal metastable symmetric zero-volt battery memristive de...
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- Issue date May 12, 2020
- International Business Machines Corporation
- Kevin W. Brew
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Information Patent Grant
Voltage-controlled resistive devices
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- Issue date Oct 29, 2019
- Massachusetts Institute of Technology
- Uwe Bauer
- B82 - NANO-TECHNOLOGY
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Electronic device
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- Issue date Aug 13, 2019
- Xerox Corporation
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Information Patent Grant
Electrically actuated switch
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- Issue date Aug 6, 2019
- Hewlett Packard Enterprise Development LP
- R. Stanley Williams
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Semiconductor devices including auxiliary bit lines
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- Issue date Apr 30, 2019
- Samsung Electronics Co., Ltd.
- Joonhee Lee
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Information Patent Grant
Non-volatile memory with adjustable cell bit shape
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- Issue date Mar 12, 2019
- HGST Netherlands B.V.
- Luiz M. Franca-Neto
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Information Patent Grant
Two-terminal reversibly switchable memory device
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- Issue date Mar 5, 2019
- Hefei Reliance Memory Limited
- Darrell Rinerson
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Information Patent Grant
Recap layer scheme to enhance RRAM performance
- Patent number 10,176,866
- Issue date Jan 8, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hai-Dang Trinh
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Information Patent Grant
Planar variable resistance memory
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- Issue date Dec 25, 2018
- Western Digital Technologies, Inc.
- Luiz M. Franca-Neto
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

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- DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
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- G11 - INFORMATION STORAGE
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SILICON-ON-INSULATOR (SOI) CIRCUITRY FOR LOW-VOLTAGE MEMORY BIT-LIN...
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SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
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- Semiconductor Energy Laboratory Co., Ltd.
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MATRIX OF ELEMENTARY SWITCHES FORMING A MESSAGE, ASSOCIATED READING...
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- Commissariat A L'Energie Atomique et Aux Energies Alternatives
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- G11 - INFORMATION STORAGE
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DRIFT AND NOISE CORRECTED MEMRISTIVE DEVICE
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- International Business Machines Corporation
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MULTI-TERMINAL NEUROMORPHIC DEVICE
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- Publication date May 12, 2022
- International Business Machines Corporation
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Carbon-Based Volatile and Non-Volatile Memristors
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TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
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- Hefei Reliance Memory Limited
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SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME
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- Industry-University Cooperation Foundation Hanyang University
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NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND N...
- Publication number 20210066585
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- SK HYNIX INC.
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- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
- Publication number 20200286554
- Publication date Sep 10, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Hideki Uochi
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
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NON-VOLATILE MEMORY CELL UTILIZING VOLATILE SWITCHING TWO TERMINAL...
- Publication number 20200051630
- Publication date Feb 13, 2020
- Crossbar, Inc.
- Hagop Nazarian
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Information Patent Application
Electrically Actuated Switch
- Publication number 20190363251
- Publication date Nov 28, 2019
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- R. Stanley Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING AUXILIARY BIT LINES
- Publication number 20190228824
- Publication date Jul 25, 2019
- Samsung Electronics Co., Ltd.
- Joonhee Lee
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED 1T1R RRAM MEMORY CELL
- Publication number 20190066779
- Publication date Feb 28, 2019
- Intel Corporation
- ELIJAH V. KARPOV
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Information Patent Application
Reconfigurable Phase Change Device
- Publication number 20190043579
- Publication date Feb 7, 2019
- University of Connecticut
- Nadim H. Kan'an
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Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SAME AND R...
- Publication number 20180144789
- Publication date May 24, 2018
- SK HYNIX INC.
- Sun Hye SHIN
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TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
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- UNITY SEMICONDUCTOR CORPORATION
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- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING AUXILIARY BIT LINES
- Publication number 20170345494
- Publication date Nov 30, 2017
- Joonhee Lee
- G11 - INFORMATION STORAGE
Information Patent Application
PLANAR VARIABLE RESISTANCE MEMORY
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- Publication date Nov 16, 2017
- Western Digital Technologies, Inc.
- Luiz M. FRANCA-NETO
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SCHOTTKY BARRIER MEMORY TRANSISTOR
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- Publication date Nov 2, 2017
- HGST NETHERLANDS B.V.
- Daniel Bedau
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Electrically Actuated Switch
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- Publication date Nov 2, 2017
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- R. Stanley Williams
- G11 - INFORMATION STORAGE
Information Patent Application
PLANAR MEMORY CELL ARCHITECTURES IN RESISTIVE MEMORY DEVICES
- Publication number 20170309332
- Publication date Oct 26, 2017
- HGST NETHERLANDS B.V.
- Daniel Bedau
- G11 - INFORMATION STORAGE
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Reconfigurable Phase Change Device
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- Publication date Aug 31, 2017
- Nadim H. Kan'an
- G11 - INFORMATION STORAGE
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ELECTRONIC DEVICE
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- Publication date Mar 16, 2017
- SK HYNIX INC.
- Tae-Jung HA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
- Publication number 20170025172
- Publication date Jan 26, 2017
- Semiconductor Energy Laboratory Co., Ltd.
- Hideki Uochi
- G11 - INFORMATION STORAGE
Information Patent Application
LOW READ CURRENT ARCHITECTURE FOR MEMORY
- Publication number 20140334222
- Publication date Nov 13, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Bruce Lynn Bateman
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT, METHOD OF DRIVING THE SAME, NONVOLATILE STORAGE DEV...
- Publication number 20140334227
- Publication date Nov 13, 2014
- Naoki Ueda
- G11 - INFORMATION STORAGE

Structure wherein the resistive material being in a transistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon-on-insulator (SOI) circuitry for low-voltage memory bit-lin...

Systems and methods for dynamically reconfigurable artificial synap...

Matrix of elementary switches forming a message, associated reading...

Two-terminal reversibly switchable memory device

Semiconductor device and method for driving the same

Thermally sensitive ionic redox transistor

Multi-terminal neuromorphic device

Carbon-based volatile and non-volatile memristors

Drift and noise corrected memristive device

Electrically actuated switch

Switching atomic transistor and method for operating same

Nonvolatile memory cells having an embedded selection element and n...

Phase change device configured to modify a plurality of reconfigura...

Two-terminal reversibly switchable memory device

Switching atomic transistor and method for operating same

Semiconductor devices including auxiliary bit lines

Multilayer selector device with low leakage current

Semiconductor device and method for driving the same

Integrated 1T1R RRAM memory cell

Two-terminal reversibly switchable memory device

Non-volatile memory cell utilizing volatile switching two terminal...

Three-terminal metastable symmetric zero-volt battery memristive de...

Voltage-controlled resistive devices

Electronic device

Electrically actuated switch

Semiconductor devices including auxiliary bit lines

Non-volatile memory with adjustable cell bit shape

Two-terminal reversibly switchable memory device

Recap layer scheme to enhance RRAM performance

Planar variable resistance memory

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY DEVICE AND METHOD FOR DRIVING SAME

SILICON-ON-INSULATOR (SOI) CIRCUITRY FOR LOW-VOLTAGE MEMORY BIT-LIN...

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

MATRIX OF ELEMENTARY SWITCHES FORMING A MESSAGE, ASSOCIATED READING...

DRIFT AND NOISE CORRECTED MEMRISTIVE DEVICE

MULTI-TERMINAL NEUROMORPHIC DEVICE

Carbon-Based Volatile and Non-Volatile Memristors

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME

NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND N...

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

NON-VOLATILE MEMORY CELL UTILIZING VOLATILE SWITCHING TWO TERMINAL...

Electrically Actuated Switch

SEMICONDUCTOR DEVICES INCLUDING AUXILIARY BIT LINES

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

INTEGRATED 1T1R RRAM MEMORY CELL

Reconfigurable Phase Change Device

SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SAME AND R...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

SEMICONDUCTOR DEVICES INCLUDING AUXILIARY BIT LINES

PLANAR VARIABLE RESISTANCE MEMORY

NONVOLATILE SCHOTTKY BARRIER MEMORY TRANSISTOR

Electrically Actuated Switch

PLANAR MEMORY CELL ARCHITECTURES IN RESISTIVE MEMORY DEVICES

Reconfigurable Phase Change Device

ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

LOW READ CURRENT ARCHITECTURE FOR MEMORY

MEMORY CIRCUIT, METHOD OF DRIVING THE SAME, NONVOLATILE STORAGE DEV...