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H01L21/02494

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02494Structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 11,908,688
- Issue date Feb 20, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF substrate structure and method of production
- Patent number 11,848,191
- Issue date Dec 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module and method for manufacturing the same
- Patent number 11,837,636
- Issue date Dec 5, 2023
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensionally stretchable single crystalline semiconductor me...
- Patent number 11,697,889
- Issue date Jul 11, 2023
- International Business Machines Corporation
- Alexander Reznicek
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Thin film transistor and manufacturing method thereof, array substr...
- Patent number 11,670,702
- Issue date Jun 6, 2023
- Beijing Boe Display Technology Co., Ltd.
- Bingqiang Gui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tilted nanowire transistor
- Patent number 11,515,430
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 (III) nitride thick layer formed on an underlying layer ha...
- Patent number 11,473,212
- Issue date Oct 18, 2022
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aspect ratio trapping in channel last process
- Patent number 11,309,408
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing different populations of molecules or fine par...
- Patent number 11,254,910
- Issue date Feb 22, 2022
- Japan Science and Technology Agency
- Koji Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising 2D material
- Patent number 11,251,307
- Issue date Feb 15, 2022
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and semiconductor device manufacturing method
- Patent number 11,244,826
- Issue date Feb 8, 2022
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D crystal hetero-structures and manufacturing methods thereof
- Patent number 11,211,460
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor nanotube with hexagonal shape
- Patent number 11,120,991
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Juntao Li
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 10,957,819
- Issue date Mar 23, 2021
- UNM Rainforest Innovations
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an alignment mark
- Patent number 10,950,487
- Issue date Mar 16, 2021
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure, semiconductor device including layered structure...
- Patent number 10,930,743
- Issue date Feb 23, 2021
- FLOSFIA INC.
- Tokiyoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based devices implementing an engineered substrate...
- Patent number 10,930,576
- Issue date Feb 23, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 10,840,094
- Issue date Nov 17, 2020
- Kokusai Electric Corporation
- Kiyohiko Maeda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
2D crystal hetero-structures and manufacturing methods thereof
- Patent number 10,784,351
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure with sacrificial layer
- Patent number 10,770,616
- Issue date Sep 8, 2020
- Sensor Electronic Technology, Inc.
- Michael Shur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power and RF devices implemented using an engineered substrate stru...
- Patent number 10,734,303
- Issue date Aug 4, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor substrate
- Patent number 10,720,374
- Issue date Jul 21, 2020
- Mitsubishi Electric Corporation
- Tomohiro Shinagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and semiconductor wafer including a porous lay...
- Patent number 10,714,377
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and a method for forming a sil...
- Patent number 10,672,875
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenides (TMDCS) over III-nitride heteroepi...
- Patent number 10,658,471
- Issue date May 19, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,651,278
- Issue date May 12, 2020
- Mitsubishi Electric Corporation
- Takeo Furuhata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 10,644,144
- Issue date May 5, 2020
- STC.UNM
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making patterned 2D transition metal dichalcogenides nan...
- Patent number 10,643,842
- Issue date May 5, 2020
- Tsinghua University
- Xue-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20240120436
- Publication date Apr 11, 2024
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Module and Method for Manufacturing the Same
- Publication number 20230016808
- Publication date Jan 19, 2023
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20220336695
- Publication date Oct 20, 2022
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHO...
- Publication number 20220328321
- Publication date Oct 13, 2022
- Sumitomo Electric Industries, Ltd.
- Takahide HIRASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE
- Publication number 20220122839
- Publication date Apr 21, 2022
- Kyocera Corporation
- Takehiro NISHIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20220005691
- Publication date Jan 6, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20210234064
- Publication date Jul 29, 2021
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...
- Publication number 20210234070
- Publication date Jul 29, 2021
- UNM RAINFOREST INNOVATIONS
- Steven R.J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTR...
- Publication number 20210210622
- Publication date Jul 8, 2021
- BOE TECHNOLOGY GROUP CO., LTD.
- Bingqiang Gui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D CRYSTAL HETERO-STRUCTURES AND MANUFACTURING METHODS THEREOF
- Publication number 20210005719
- Publication date Jan 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TILTED NANOWIRE TRANSISTOR
- Publication number 20200212228
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...
- Publication number 20200123677
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Alexander Reznicek
- C30 - CRYSTAL GROWTH
Information Patent Application
LATERAL SEMICONDUCTOR NANOTUBE WITH HEXAGONAL SHAPE
- Publication number 20200035488
- Publication date Jan 30, 2020
- International Business Machines Corporation
- Juntao Li
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...
- Publication number 20200006597
- Publication date Jan 2, 2020
- STC.UNM
- Steven R.J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY
- Publication number 20190288158
- Publication date Sep 19, 2019
- QMAT, Inc.
- Francois J. HENLEY
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FILLING RECESS AND PROCESSING APPARATUS
- Publication number 20190172710
- Publication date Jun 6, 2019
- TOKYO ELECTRON LIMITED
- Hiroki MURAKAMI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Silicon Carbide Semiconductor Device and a Method for Forming a Sil...
- Publication number 20190123148
- Publication date Apr 25, 2019
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASPECT RATIO TRAPPING IN CHANNEL LAST PROCESS
- Publication number 20190123178
- Publication date Apr 25, 2019
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...
- Publication number 20190103481
- Publication date Apr 4, 2019
- STC.UNM
- Steven R.J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having Graphene Mate...
- Publication number 20190081143
- Publication date Mar 14, 2019
- INFINEON TECHNOLOGIES AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING 2D MATERIAL
- Publication number 20190074381
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Semiconductor Wafer Including a Porous Lay...
- Publication number 20190074212
- Publication date Mar 7, 2019
- INFINEON TECHNOLOGIES AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING 2D MATERIAL
- Publication number 20190074380
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FINFET WITH IMPROVED TOP SOURCE/DRAIN CONTACT
- Publication number 20190067474
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE...
- Publication number 20190006472
- Publication date Jan 3, 2019
- FLOSFIA INC.
- Tokiyoshi MATSUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Heterostructure with Sacrificial Layer
- Publication number 20180374986
- Publication date Dec 27, 2018
- SENSOR ELECTRONIC TECHNOLOGY, INC.
- Michael Shur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS FIN AS COMPLIANT MEDIUM TO FORM DISLOCATION-FREE HETEROEPITA...
- Publication number 20180308691
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTORS WITH COUNTER-DOPED DOPANT DIFFUS...
- Publication number 20180254332
- Publication date Sep 6, 2018
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HETEROJUNCTION DOPANT DIFFU...
- Publication number 20180248028
- Publication date Aug 30, 2018
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOR PHASE GROWTH RATE MEASURING APPARATUS, VAPOR PHASE GROWTH APP...
- Publication number 20180224268
- Publication date Aug 9, 2018
- NUFLARE TECHNOLOGY, INC.
- Yasushi IYECHIKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and a substrate for a semiconductor device

Nitride semiconductor structure, nitride semiconductor device, and...

Method for manufacturing nitride semiconductor substrate, nitride s...

RF substrate structure and method of production

Semiconductor module and method for manufacturing the same

Three-dimensionally stretchable single crystalline semiconductor me...

Thin film transistor and manufacturing method thereof, array substr...

Tilted nanowire transistor

Group 13 (III) nitride thick layer formed on an underlying layer ha...

Aspect ratio trapping in channel last process

Method for producing different populations of molecules or fine par...

Device comprising 2D material

Crystal growth method and semiconductor device manufacturing method

2D crystal hetero-structures and manufacturing methods thereof

Lateral semiconductor nanotube with hexagonal shape

Growth of cubic crystalline phase structure on silicon substrates a...

Method for forming an alignment mark

Layered structure, semiconductor device including layered structure...

Gallium-nitride based devices implementing an engineered substrate...

Method of manufacturing semiconductor device, substrate processing...

2D crystal hetero-structures and manufacturing methods thereof

Heterostructure with sacrificial layer

Power and RF devices implemented using an engineered substrate stru...

Semiconductor substrate

Semiconductor device and semiconductor wafer including a porous lay...

Silicon carbide semiconductor device and a method for forming a sil...

Transition metal dichalcogenides (TMDCS) over III-nitride heteroepi...

Semiconductor device and method of manufacturing semiconductor device

Growth of cubic crystalline phase structure on silicon substrates a...

Method for making patterned 2D transition metal dichalcogenides nan...

Patents Applicationslast 30 patents

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

Semiconductor Module and Method for Manufacturing the Same

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

MULTILAYER SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHO...

CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...

THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTR...

2D CRYSTAL HETERO-STRUCTURES AND MANUFACTURING METHODS THEREOF

TILTED NANOWIRE TRANSISTOR

THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...

LATERAL SEMICONDUCTOR NANOTUBE WITH HEXAGONAL SHAPE

GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...

SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY

METHOD OF FILLING RECESS AND PROCESSING APPARATUS

Silicon Carbide Semiconductor Device and a Method for Forming a Sil...

ASPECT RATIO TRAPPING IN CHANNEL LAST PROCESS

GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...

Method of Manufacturing a Semiconductor Device Having Graphene Mate...

DEVICE COMPRISING 2D MATERIAL

Semiconductor Device and Semiconductor Wafer Including a Porous Lay...

DEVICE COMPRISING 2D MATERIAL

VERTICAL FINFET WITH IMPROVED TOP SOURCE/DRAIN CONTACT

LAYERED STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE...

Heterostructure with Sacrificial Layer

POROUS FIN AS COMPLIANT MEDIUM TO FORM DISLOCATION-FREE HETEROEPITA...

HIGH-ELECTRON-MOBILITY TRANSISTORS WITH COUNTER-DOPED DOPANT DIFFUS...

HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HETEROJUNCTION DOPANT DIFFU...

VAPOR PHASE GROWTH RATE MEASURING APPARATUS, VAPOR PHASE GROWTH APP...