Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction

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H01L29/158

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/158Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction

Industries

Patents Grantslast 30 patents

Information Patent Grant
Lateral bipolar transistor structure with superlattice layer and me...
- Patent number 11,862,717
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice pattern
- Patent number 11,777,001
- Issue date Oct 3, 2023
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,677,017
- Issue date Jun 13, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Superlattice structure including two-dimensional material and devic...
- Patent number 11,575,011
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming super-junction corner and termination structure...
- Patent number 11,508,819
- Issue date Nov 22, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stretchable form of single crystal silicon for high performance ele...
- Patent number 11,456,258
- Issue date Sep 27, 2022
- The Board of Trustees of the University of Illinois
- John A. Rogers
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device including superlattice pattern
- Patent number 11,362,182
- Issue date Jun 14, 2022
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source to channel junction for III-V metal-oxide-semiconductor fiel...
- Patent number 11,335,796
- Issue date May 17, 2022
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D crystal hetero-structures and manufacturing methods thereof
- Patent number 11,211,460
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice structure including two-dimensional material and devic...
- Patent number 11,189,699
- Issue date Nov 30, 2021
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,158,731
- Issue date Oct 26, 2021
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hexagonal arrays for quantum dot devices
- Patent number 11,107,891
- Issue date Aug 31, 2021
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device structure having carrier-trapping layers with...
- Patent number 11,063,117
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with graded sidewalls
- Patent number 11,038,022
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process for quantum structures with staircase active...
- Patent number 10,854,738
- Issue date Dec 1, 2020
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
2D crystal hetero-structures and manufacturing methods thereof
- Patent number 10,784,351
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 10,727,105
- Issue date Jul 28, 2020
- RENSAS ELECTRONICS CORPORATION
- Tsuyoshi Kachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with improved break...
- Patent number 10,580,868
- Issue date Mar 3, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a field electrode
- Patent number 10,580,873
- Issue date Mar 3, 2020
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 10,573,719
- Issue date Feb 25, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a superjunction transistor device
- Patent number 10,553,681
- Issue date Feb 4, 2020
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-N nanowire transistors
- Patent number 10,541,305
- Issue date Jan 21, 2020
- Intel Corporation
- Han Wui Then
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and a manufacturing method therefor
- Patent number 10,504,891
- Issue date Dec 10, 2019
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress relieving semiconductor layer
- Patent number 10,460,952
- Issue date Oct 29, 2019
- Sensor Electronic Technology, Inc.
- Maxim S. Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 10,374,071
- Issue date Aug 6, 2019
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization-doped enhancement mode HEMT
- Patent number 10,304,931
- Issue date May 28, 2019
- University of Electronic Science and Technology of China
- Xiaorong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress relieving semiconductor layer
- Patent number 10,297,460
- Issue date May 21, 2019
- Sensor Electronic Technology, Inc.
- Maxim S. Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate quantum dot field-effect transistors without bi...
- Patent number 10,224,422
- Issue date Mar 5, 2019
- The Regents of the University of California
- Matt Law
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a field electrode
- Patent number 10,204,993
- Issue date Feb 12, 2019
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-N nanowire transistors
- Patent number 10,186,581
- Issue date Jan 22, 2019
- Intel Corporation
- Han Wui Then
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE PATTERN
- Publication number 20230411458
- Publication date Dec 21, 2023
- Samsung Electronics Co., Ltd.
- ILGYOU SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...
- Publication number 20230395665
- Publication date Dec 7, 2023
- Samsung Electronics Co., LTD
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED QUANTUM DOT DEVICES
- Publication number 20230197833
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE CONTAINING RESONANT TUNNELING BARRI...
- Publication number 20230164996
- Publication date May 25, 2023
- SANDISK TECHNOLOGIES LLC
- Peter RABKIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR EPITAXY STRUCTURE
- Publication number 20230138899
- Publication date May 4, 2023
- GLOBALWAFERS CO., LTD.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH SUPERLATTICE LAYER AND ME...
- Publication number 20230064512
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE PATTERN
- Publication number 20220278204
- Publication date Sep 1, 2022
- Samsung Electronics Co., Ltd.
- ILGYOU SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...
- Publication number 20220109051
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20220013658
- Publication date Jan 13, 2022
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE PATTERN
- Publication number 20210343841
- Publication date Nov 4, 2021
- Samsung Electronics Co., Ltd.
- ILGYOU SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...
- Publication number 20210257461
- Publication date Aug 19, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D CRYSTAL HETERO-STRUCTURES AND MANUFACTURING METHODS THEREOF
- Publication number 20210005719
- Publication date Jan 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20200350423
- Publication date Nov 5, 2020
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HEXAGONAL ARRAYS FOR QUANTUM DOT DEVICES
- Publication number 20200321436
- Publication date Oct 8, 2020
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
SOURCE TO CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIEL...
- Publication number 20200287036
- Publication date Sep 10, 2020
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS
- Publication number 20200161431
- Publication date May 21, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Process for Quantum Structures with Staircase Active...
- Publication number 20200152776
- Publication date May 14, 2020
- equal1.labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Application
Stretchable Form of Single Crystal Silicon for High Performance Ele...
- Publication number 20200013720
- Publication date Jan 9, 2020
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- John A. ROGERS
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...
- Publication number 20190371892
- Publication date Dec 5, 2019
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...
- Publication number 20190305088
- Publication date Oct 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-N NANOWIRE TRANSISTORS
- Publication number 20190165106
- Publication date May 30, 2019
- Intel Corporation
- Han Wui THEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
Power Semiconductor Device Having a Field Electrode
- Publication number 20190157402
- Publication date May 23, 2019
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a Superjunction Transistor Device
- Publication number 20190058038
- Publication date Feb 21, 2019
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Manufacturing Method Therefor
- Publication number 20190051647
- Publication date Feb 14, 2019
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Relieving Semiconductor Layer
- Publication number 20180323071
- Publication date Nov 8, 2018
- SENSOR ELECTRONIC TECHNOLOGY, INC.
- Maxim S. Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION-DOPED ENHANCEMENT MODE HEMT
- Publication number 20180294335
- Publication date Oct 11, 2018
- University of Electronic Science and Technology of China
- Xiaorong LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION SCHOTTKY DIODE
- Publication number 20180026143
- Publication date Jan 25, 2018
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Field Electrode
- Publication number 20180019310
- Publication date Jan 18, 2018
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20180019160
- Publication date Jan 18, 2018
- RENESAS ELECTRONICS CORPORATION
- Tsuyoshi KACHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Super Junction Semiconductor Device and S...
- Publication number 20180006147
- Publication date Jan 4, 2018
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS

Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Lateral bipolar transistor structure with superlattice layer and me...

Semiconductor device including superlattice pattern

Quantum well stacks for quantum dot devices

Superlattice structure including two-dimensional material and devic...

Method for forming super-junction corner and termination structure...

Stretchable form of single crystal silicon for high performance ele...

Semiconductor device including superlattice pattern

Source to channel junction for III-V metal-oxide-semiconductor fiel...

2D crystal hetero-structures and manufacturing methods thereof

Superlattice structure including two-dimensional material and devic...

Quantum well stacks for quantum dot devices

Hexagonal arrays for quantum dot devices

Semiconductor device structure having carrier-trapping layers with...

Super-junction corner and termination structure with graded sidewalls

Semiconductor process for quantum structures with staircase active...

2D crystal hetero-structures and manufacturing methods thereof

Semiconductor device and manufacturing method therefor

Super-junction corner and termination structure with improved break...

Power semiconductor device having a field electrode

Horizontal gate all around device isolation

Forming a superjunction transistor device

Group III-N nanowire transistors

Semiconductor device and a manufacturing method therefor

Stress relieving semiconductor layer

Heterojunction bipolar transistor

Polarization-doped enhancement mode HEMT

Stress relieving semiconductor layer

Method to fabricate quantum dot field-effect transistors without bi...

Power semiconductor device having a field electrode

Group III-N nanowire transistors

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE PATTERN

SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...

NANORIBBON-BASED QUANTUM DOT DEVICES

THREE DIMENSIONAL MEMORY DEVICE CONTAINING RESONANT TUNNELING BARRI...

SEMICONDUCTOR EPITAXY STRUCTURE

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH SUPERLATTICE LAYER AND ME...

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE PATTERN

SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE PATTERN

METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...

2D CRYSTAL HETERO-STRUCTURES AND MANUFACTURING METHODS THEREOF

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

HEXAGONAL ARRAYS FOR QUANTUM DOT DEVICES

SOURCE TO CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIEL...

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS

Semiconductor Process for Quantum Structures with Staircase Active...

Stretchable Form of Single Crystal Silicon for High Performance Ele...

SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...

GROUP III-N NANOWIRE TRANSISTORS

Power Semiconductor Device Having a Field Electrode

Forming a Superjunction Transistor Device

Semiconductor Device and a Manufacturing Method Therefor

Stress Relieving Semiconductor Layer

POLARIZATION-DOPED ENHANCEMENT MODE HEMT

SUPER-JUNCTION SCHOTTKY DIODE

Power Semiconductor Device Having a Field Electrode

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Method of Manufacturing a Super Junction Semiconductor Device and S...