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CPC
C30B19/068

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

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C30B19/068Substrate holders

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Patents Grantslast 30 patents

Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 11,453,956
- Issue date Sep 27, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 10,400,352
- Issue date Sep 3, 2019
- Soraa, Inc.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing crystal of silicon carbide, and crystal produc...
- Patent number 10,151,046
- Issue date Dec 11, 2018
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal and method for producing...
- Patent number 10,100,432
- Issue date Oct 16, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,094,044
- Issue date Oct 9, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,081,883
- Issue date Sep 25, 2018
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC single crystal in the presence of a magn...
- Patent number 9,708,734
- Issue date Jul 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an n-type SiC single crystal from a Si—C solut...
- Patent number 9,702,057
- Issue date Jul 11, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparati for fabricating thin semiconductor bodies from molten mate...
- Patent number 9,643,342
- Issue date May 9, 2017
- 1366 Technologies, Inc.
- Emanuel M. Sachs
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
SiC single crystal ingot and production method therefor
- Patent number 9,523,156
- Issue date Dec 20, 2016
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for crystal growth of a metal-nonmetal compound using a meta...
- Patent number 8,945,302
- Issue date Feb 3, 2015
- Mosaic Crystals Ltd.
- Moshe Einav
- C30 - CRYSTAL GROWTH
Information Patent Grant
Selected methods for efficiently making thin semiconductor bodies f...
- Patent number 8,696,810
- Issue date Apr 15, 2014
- 1366 Technologies, Inc.
- Eerik T. Hantsoo
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Methods for efficiently making thin semiconductor bodies from molte...
- Patent number 8,293,009
- Issue date Oct 23, 2012
- 1366 Technologies Inc.
- Emanuel M. Sachs
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Liquid-phase growth apparatus and method
- Patent number 7,615,115
- Issue date Nov 10, 2009
- Canon Kabushiki Kaisha
- Masaki Mizutani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Liquid-phase growth apparatus and method
- Patent number 7,407,547
- Issue date Aug 5, 2008
- Canon Kabushiki Kaisha
- Masaki Mizutani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Liquid-phase growth apparatus and method
- Patent number 7,014,711
- Issue date Mar 21, 2006
- Canon Kabushiki Kaisha
- Masaki Mizutani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Liquid-phase growth process and liquid-phase growth apparatus
- Patent number 6,872,248
- Issue date Mar 29, 2005
- Canon Kabushiki Kaisha
- Masaki Mizutani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor liquid phase epitaxial growth method and apparatus, a...
- Patent number 5,922,126
- Issue date Jul 13, 1999
- Kabushiki Kaisha Toshiba
- Kazuyoshi Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Support frame for supporting a semiconductor wafer carrier
- Patent number 5,012,935
- Issue date May 7, 1991
- Seiichiro Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for growing multi-layer crystals employing set of masking el...
- Patent number 4,938,166
- Issue date Jul 3, 1990
- Hughes Aircraft Company
- Robert L. Joyce
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for epitaxy from the liquid phase of semiconductor layers
- Patent number 4,748,933
- Issue date Jun 7, 1988
- U.S. Philips Corporation
- Bernard Latorre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate holder for liquid phase epitaxial growth
- Patent number 4,354,453
- Issue date Oct 19, 1982
- Matsushita Electric Industrial Co., Ltd.
- Susumu Koike
- C30 - CRYSTAL GROWTH
Information Patent Grant
Holder for liquid phase epitaxial growth
- Patent number 4,350,116
- Issue date Sep 21, 1982
- International Business Machines Corporation
- Johannes Grandia
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for making semiconductor devices
- Patent number 4,338,877
- Issue date Jul 13, 1982
- Matsushita Electric Industrial Co., Ltd.
- Haruyoshi Yamanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for epitaxial crystal growth from the liquid phase
- Patent number 4,308,820
- Issue date Jan 5, 1982
- U.S. Philips Corporation
- Theodorus G. J. van Oirschot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Simultaneous formation of garnet epilayer on a plurality of substrates
- Patent number 4,277,519
- Issue date Jul 7, 1981
- Bell Telephone Laboratories, Incorporated
- Steven J. Licht
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for liquid phase epitaxy multiple dipping of wafers for bubb...
- Patent number 4,243,472
- Issue date Jan 6, 1981
- Burroughs Corporation
- Charles F. O'Neill
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating multiple layer composite
- Patent number 4,200,484
- Issue date Apr 29, 1980
- Rockwell International Corporation
- Howard L. Glass
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Method for growth of a merged crystal by bonding at least a first a...
- Publication number 20200087813
- Publication date Mar 19, 2020
- Soraa, Inc.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Crystal of Silicon Carbide, and Crystal Produc...
- Publication number 20170260647
- Publication date Sep 14, 2017
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20170198408
- Publication date Jul 13, 2017
- Toyota Jidosha Kabushiki Kaisha
- Motohisa KADO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170167049
- Publication date Jun 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT
- Publication number 20170145585
- Publication date May 25, 2017
- Soraa, Inc.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS
- Publication number 20160194785
- Publication date Jul 7, 2016
- Solar World Industries America Inc.
- Nathan STODDARD
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL
- Publication number 20150299896
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20150299900
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...
- Publication number 20150225872
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PRODUCING APPARATUS, SiC SINGLE CRYSTAL PRODUCING METHOD, A...
- Publication number 20150167197
- Publication date Jun 18, 2015
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR
- Publication number 20150167196
- Publication date Jun 18, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEV...
- Publication number 20150013590
- Publication date Jan 15, 2015
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATI FOR FABRICATING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATE...
- Publication number 20140220171
- Publication date Aug 7, 2014
- 1366 TECHNOLOGIES, INC.
- Emanuel M. Sachs
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20140116324
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS
- Publication number 20140030501
- Publication date Jan 30, 2014
- Nathan STODDARD
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND
- Publication number 20130333613
- Publication date Dec 19, 2013
- Mosiac Crystals Ltd.
- Moshe Einav
- C30 - CRYSTAL GROWTH
Information Patent Application
SELECTED METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES F...
- Publication number 20130036967
- Publication date Feb 14, 2013
- 1366 TECHNOLOGIES INC.
- Emanuel M. Sachs
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTE...
- Publication number 20120067273
- Publication date Mar 22, 2012
- 1366 TECHNOLOGIES INC.
- Emanuel M. Sachs
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
METHODS AND APPARATI FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLT...
- Publication number 20110247549
- Publication date Oct 13, 2011
- 1366 TECHNOLOGIES INC.
- Emanuel M. Sachs
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
LIQUID-PHASE GROWTH APPARATUS AND METHOD
- Publication number 20090000540
- Publication date Jan 1, 2009
- Canon Kabushiki Kaisha
- Masaki Mizutani
- C30 - CRYSTAL GROWTH
Information Patent Application
Liquid-phase growth apparatus and method
- Publication number 20060054078
- Publication date Mar 16, 2006
- Canon Kabushiki Kaisha
- Masaki Mizutani
- C30 - CRYSTAL GROWTH
Information Patent Application
Liquid-phase growth process and liquid-phase growth apparatus
- Publication number 20030230231
- Publication date Dec 18, 2003
- Canon Kabushiki Kaisha
- Masaki Mizutani
- C30 - CRYSTAL GROWTH
Information Patent Application
Liquid-phase growth apparatus and method
- Publication number 20030183154
- Publication date Oct 2, 2003
- Masaki Mizutani
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a microwave device
- Publication number 20020013053
- Publication date Jan 31, 2002
- Murata Manufacturing Co., Ltd.
- Takashi Takagi
- C30 - CRYSTAL GROWTH

Substrate holders

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for growth of a merged crystal by bonding at least a first a...

SiC single crystal and method for producing same

Method for growth of a merged crystal by bonding at least a first a...

Method for producing crystal of silicon carbide, and crystal produc...

Apparatus for producing SiC single crystal and method for producing...

SiC single crystal and method for producing same

SiC single crystal production method and production apparatus

Production apparatus and production method of SiC single crystal

Method for producing a SiC single crystal in the presence of a magn...

Method for producing an n-type SiC single crystal from a Si—C solut...

Apparati for fabricating thin semiconductor bodies from molten mate...

SiC single crystal ingot and production method therefor

Method for crystal growth of a metal-nonmetal compound using a meta...

Selected methods for efficiently making thin semiconductor bodies f...

Methods for efficiently making thin semiconductor bodies from molte...

Liquid-phase growth apparatus and method

Liquid-phase growth apparatus and method

Liquid-phase growth apparatus and method

Liquid-phase growth process and liquid-phase growth apparatus

Semiconductor liquid phase epitaxial growth method and apparatus, a...

Support frame for supporting a semiconductor wafer carrier

Device for growing multi-layer crystals employing set of masking el...

Crucible for epitaxy from the liquid phase of semiconductor layers

Substrate holder for liquid phase epitaxial growth

Holder for liquid phase epitaxial growth

Apparatus for making semiconductor devices

Apparatus for epitaxial crystal growth from the liquid phase

Simultaneous formation of garnet epilayer on a plurality of substrates

Method for liquid phase epitaxy multiple dipping of wafers for bubb...

Method of fabricating multiple layer composite

Patents Applicationslast 30 patents

Method for growth of a merged crystal by bonding at least a first a...

Method for Producing Crystal of Silicon Carbide, and Crystal Produc...

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT

APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS

METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...

CRYSTAL PRODUCING APPARATUS, SiC SINGLE CRYSTAL PRODUCING METHOD, A...

SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR

SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEV...

APPARATI FOR FABRICATING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATE...

PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL

APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS

METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND

SELECTED METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES F...

METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTE...

METHODS AND APPARATI FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLT...

LIQUID-PHASE GROWTH APPARATUS AND METHOD

Liquid-phase growth apparatus and method

Liquid-phase growth process and liquid-phase growth apparatus

Liquid-phase growth apparatus and method

Method of producing a microwave device