Temperature settings

Industry

CPC
H01L2224/80095

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

Current Industry

H01L2224/80095Temperature settings

Industries

Patents Grantslast 30 patents

Information Patent Grant
Wafer-bonding structure and method of forming thereof
- Patent number 12,021,059
- Issue date Jun 25, 2024
- Integrated Silicon Solution Inc.
- Hsingya Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate bonding apparatus and method of manufacturing semiconduct...
- Patent number 11,990,444
- Issue date May 21, 2024
- Samsung Electronics Co., Ltd.
- Taeyeong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-to-back bonding with through-substrate via (TSV)
- Patent number 11,791,241
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding structure and hybrid bonding method
- Patent number 11,756,922
- Issue date Sep 12, 2023
- Huawei Technologies Co., Ltd.
- Ran He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with re-fill layer
- Patent number 11,646,292
- Issue date May 9, 2023
- NANYA TECHNOLOGY CORPORATION
- Shing-Yih Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-to-back bonding with through-substrate via (TSV)
- Patent number 10,847,443
- Issue date Nov 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate bonding apparatus and substrate bonding method
- Patent number 10,424,557
- Issue date Sep 24, 2019
- Nikon Corporation
- Isao Sugaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanisms for forming three-dimensional integrated circuit (3DIC)...
- Patent number 9,929,050
- Issue date Mar 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-to-back bonding with through-substrate via (TSV)
- Patent number 9,831,156
- Issue date Nov 28, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-to-back bonding with through-substrate via (TSV)
- Patent number 9,299,640
- Issue date Mar 29, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE BONDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20240266317
- Publication date Aug 8, 2024
- Samsung Electronics Co., Ltd.
- Taeyeong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH RE-FILL LAYER
- Publication number 20230110531
- Publication date Apr 13, 2023
- NANYA TECHNOLOGY CORPORATION
- Shing-Yih SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER-BONDING STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20220020721
- Publication date Jan 20, 2022
- Integrated Silicon Solution Inc.
- Hsingya Arthur WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER-BONDING STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20210296281
- Publication date Sep 23, 2021
- Integrated Silicon Solution Inc.
- Hsingya Arthur WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE BONDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20210057373
- Publication date Feb 25, 2021
- SAMSUNG ELECTRONICS CO,. LTD.
- TAEYEONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV)
- Publication number 20210043547
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jing-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE BONDING APPARATUS AND SUBSTRATE BONDING METHOD
- Publication number 20190043826
- Publication date Feb 7, 2019
- Nikon Corporation
- Isao SUGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV)
- Publication number 20180145011
- Publication date May 24, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jing-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS

Temperature settings

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Wafer-bonding structure and method of forming thereof

Substrate bonding apparatus and method of manufacturing semiconduct...

Front-to-back bonding with through-substrate via (TSV)

Hybrid bonding structure and hybrid bonding method

Method for fabricating semiconductor device with re-fill layer

Front-to-back bonding with through-substrate via (TSV)

Substrate bonding apparatus and substrate bonding method

Mechanisms for forming three-dimensional integrated circuit (3DIC)...

Front-to-back bonding with through-substrate via (TSV)

Front-to-back bonding with through-substrate via (TSV)

Patents Applicationslast 30 patents

SUBSTRATE BONDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCT...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH RE-FILL LAYER

WAFER-BONDING STRUCTURE AND METHOD OF FORMING THEREOF

WAFER-BONDING STRUCTURE AND METHOD OF FORMING THEREOF

SUBSTRATE BONDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCT...

FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV)

SUBSTRATE BONDING APPARATUS AND SUBSTRATE BONDING METHOD

FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV)