the channel comprising at least one vertical portion

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H01L27/11582

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11582the channel comprising at least one vertical portion

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device and manufacturing method of the semicon...
- Patent number 11,688,682
- Issue date Jun 27, 2023
- SK hynix Inc.
- Jin Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including self-aligned conductive contacts
- Patent number 11,682,581
- Issue date Jun 20, 2023
- Micron Technology, Inc.
- Kar Wui Thong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell including cell transistor including control gate and ch...
- Patent number 11,682,667
- Issue date Jun 20, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,683,934
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Young-Jin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having wafer-to-wafer bonding structure and ma...
- Patent number 11,676,901
- Issue date Jun 13, 2023
- SK hynix Inc.
- Sung Lae Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for semiconductor chip hole geometry metrology
- Patent number 11,674,909
- Issue date Jun 13, 2023
- Yangtze Memory Technologies Co., Ltd.
- Le Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D flash memory with annular channel structure and array layout the...
- Patent number 11,678,486
- Issue date Jun 13, 2023
- MACRONIX INIERNATIONAL CO., LTD.
- Hang-Ting Lue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,836
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Jae Ick Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,678,485
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Seok-Cheon Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having stacked structures and method for manufact...
- Patent number 11,678,487
- Issue date Jun 13, 2023
- SK Hynix Inc.
- Ki Hong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device
- Patent number 11,678,488
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Seokcheon Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active protection circuits for semiconductor devices
- Patent number 11,676,917
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array structures for capacitive sense NAND memory
- Patent number 11,678,482
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a staircase structure
- Patent number 11,678,481
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Rohit Kothari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flash memory device including channel structures...
- Patent number 11,678,489
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Jisung Cheon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including at least one channel post wit...
- Patent number 11,672,122
- Issue date Jun 6, 2023
- SK hynix Inc.
- Sung Wook Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory array with local line selector
- Patent number 11,672,123
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Jun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 11,670,370
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense line structures in capacitive sense NAND memory
- Patent number 11,670,379
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with protruding separating portions
- Patent number 11,672,112
- Issue date Jun 6, 2023
- Kioxia Corporation
- Genki Kawaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory devices
- Patent number 11,672,119
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jisung Cheon
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods used in forming a memory array comprising...
- Patent number 11,672,114
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Bharat Bhushan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,672,117
- Issue date Jun 6, 2023
- Kioxia Corporation
- Kotaro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices comprising adjoining oxide materials and related...
- Patent number 11,672,118
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Page buffer and memory device including the same
- Patent number 11,670,377
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Se Won Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-sided adjacent memory cell interference mitigation
- Patent number 11,670,380
- Issue date Jun 6, 2023
- SanDisk Technologies LLC
- Eran Sharon
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 11,672,113
- Issue date Jun 6, 2023
- Kioxia Corporation
- Kaihei Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies having charge-trapping material arranged in v...
- Patent number 11,672,120
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Byeung Chui Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,665,904
- Issue date May 30, 2023
- SK hynix Inc.
- Jung Ryul Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240237338
- Publication date Jul 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Longxiang YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY DEVICE AND METHOD OF FORMING SEAL STRUCTURE
- Publication number 20240234339
- Publication date Jul 11, 2024
- Macronix International Co., Ltd.
- Cheng-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215236
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215238
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME
- Publication number 20240206164
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, THREE-DIMENSIONAL MEMORY, MEMORY SYSTEM, A...
- Publication number 20240194606
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...
- Publication number 20240194607
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qiangwei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240188292
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Cuicui Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240179903
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Frederick Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME
- Publication number 20240170389
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING SACRIFICIAL LAYERS OF A STACK OF A THREE-DIMENS...
- Publication number 20240172437
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...
- Publication number 20240172446
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhaosong LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240170393
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY BLOCK, MEMORY-CELL GROUP AND MEMORY DEVICE
- Publication number 20240172438
- Publication date May 23, 2024
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Qiong ZHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY, FABRICATING METHOD THEREOF AND MEMORY SYSTEM
- Publication number 20240164097
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianquan JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY, AND ME...
- Publication number 20240164095
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yonggang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES
- Publication number 20240147719
- Publication date May 2, 2024
- TOKYO ELECTRON LIMITED
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY DEVICE AND METHOD OF FORMING SEAL STRUCTURE
- Publication number 20240136305
- Publication date Apr 25, 2024
- Macronix International Co., Ltd.
- Cheng-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240138148
- Publication date Apr 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Longxiang YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEIVCE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130129
- Publication date Apr 18, 2024
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jiayi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING A DOPED DIELECTRIC MATERIAL, METH...
- Publication number 20240130121
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130130
- Publication date Apr 18, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiayi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240121954
- Publication date Apr 11, 2024
- Macronix International Co., Ltd.
- Chih-Wei Hu
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY
- Publication number 20240114685
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...
- Publication number 20240113012
- Publication date Apr 4, 2024
- Micron Technology, Inc.
- Collin Howder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...
- Publication number 20240107758
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107760
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...
- Publication number 20240105622
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM, SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20240107759
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- LinChun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107761
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS

the channel comprising at least one vertical portion

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device and manufacturing method of the semicon...

Memory device including self-aligned conductive contacts

Memory cell including cell transistor including control gate and ch...

Nonvolatile memory device and method for fabricating the same

Semiconductor device having wafer-to-wafer bonding structure and ma...

Systems and methods for semiconductor chip hole geometry metrology

3D flash memory with annular channel structure and array layout the...

Semiconductor device

Vertical memory devices

Electronic device having stacked structures and method for manufact...

Three-dimensional semiconductor memory device

Active protection circuits for semiconductor devices

Memory array structures for capacitive sense NAND memory

Methods of forming a staircase structure

Three-dimensional flash memory device including channel structures...

Semiconductor memory device including at least one channel post wit...

Three-dimensional memory array with local line selector

3D memory device including shared select gate connections between m...

Sense line structures in capacitive sense NAND memory

Semiconductor memory device with protruding separating portions

Vertical memory devices

Memory arrays and methods used in forming a memory array comprising...

Semiconductor memory device and method for manufacturing same

Electronic devices comprising adjoining oxide materials and related...

Page buffer and memory device including the same

Two-sided adjacent memory cell interference mitigation

Semiconductor storage device

Integrated assemblies having charge-trapping material arranged in v...

Semiconductor device and manufacturing method of the same

Non-volatile memory

Patents Applicationslast 30 patents

THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

3D MEMORY DEVICE AND METHOD OF FORMING SEAL STRUCTURE

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME

SEMICONDUCTOR STRUCTURE, THREE-DIMENSIONAL MEMORY, MEMORY SYSTEM, A...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME

METHOD FOR REMOVING SACRIFICIAL LAYERS OF A STACK OF A THREE-DIMENS...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

MEMORY BLOCK, MEMORY-CELL GROUP AND MEMORY DEVICE

THREE-DIMENSIONAL MEMORY, FABRICATING METHOD THEREOF AND MEMORY SYSTEM

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY, AND ME...

FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES

3D MEMORY DEVICE AND METHOD OF FORMING SEAL STRUCTURE

THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

THREE-DIMENSIONAL MEMORY DEIVCE, MANUFACTURING METHOD THEREOF, AND...

MICROELECTRONIC DEVICES INCLUDING A DOPED DIELECTRIC MATERIAL, METH...

THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...

MEMORY SYSTEM, SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME