the conductive layers comprising transition metals

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H01L21/28568

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28568the conductive layers comprising transition metals

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of processing substrate, method of manufacturing semiconduct...
- Patent number 12,170,206
- Issue date Dec 17, 2024
- Kokusai Electric Corporation
- Arito Ogawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure and a manufacturing method thereof
- Patent number 12,166,133
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qiang Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of selective deposition
- Patent number 12,157,943
- Issue date Dec 3, 2024
- Applied Materials, Inc.
- Wenjing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tungsten molybdenum structures
- Patent number 12,159,804
- Issue date Dec 3, 2024
- Applied Materials, Inc.
- Xi Cen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of processing substrate, method of manufacturing semiconduct...
- Patent number 12,148,621
- Issue date Nov 19, 2024
- Kokusai Electric Corporation
- Koei Kuribayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of tungsten on molybdenum templates
- Patent number 12,148,623
- Issue date Nov 19, 2024
- Lam Research Corporation
- Patrick A. van Cleemput
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition method
- Patent number 12,119,228
- Issue date Oct 15, 2024
- ASM IP Holding B.V.
- Chiyu Zhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memories having vertically stacked conductive filled structures
- Patent number 12,114,492
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a metallic film on a substrate by cyclical depo...
- Patent number 12,106,965
- Issue date Oct 1, 2024
- ASM IP Holding B.V.
- Katja Väyrynen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Butted contacts and methods of fabricating the same in semiconducto...
- Patent number 12,094,942
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 12,084,757
- Issue date Sep 10, 2024
- Kokusai Electric Corporation
- Arito Ogawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composite work function layer formation using same work function ma...
- Patent number 12,080,777
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing two-dimensional transition metal chalcogenide fil...
- Patent number 12,077,853
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Hyangsook Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Molybdenum deposition
- Patent number 12,074,029
- Issue date Aug 27, 2024
- Lam Research Corporation
- Patrick A. Van Cleemput
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bottom-up metal nitride formation
- Patent number 12,068,164
- Issue date Aug 20, 2024
- ASM IP Holding B.V.
- Eric James Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,068,163
- Issue date Aug 20, 2024
- Semiconductor Manufacturing International (Beijing) Corporation
- Hua Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having via sidewall adhesion with encapsulant
- Patent number 12,062,603
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid flush purging during atomic layer deposition
- Patent number 12,060,639
- Issue date Aug 13, 2024
- Lam Research Corporation
- Pragna Nannapaneni
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fluorine-free tungsten ALD for dielectric selectivity improvement
- Patent number 12,062,545
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Ilanit Fisher
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming barrier layer in semiconductor structure
- Patent number 12,062,573
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Peng Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming film layer
- Patent number 12,057,318
- Issue date Aug 6, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhonglei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer for liner-free conductive structures
- Patent number 12,057,397
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuen-Shin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS high-k metal gates
- Patent number 12,051,734
- Issue date Jul 30, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device and semiconductor device
- Patent number 12,051,617
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min Han Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gates and methods of forming thereby
- Patent number 12,046,519
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,040,364
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 12,020,947
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hui-An Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of Filling Openings with Conductive Material, and Assemblie...
- Publication number 20240407160
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240395874
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Molybdenum-Containing Device-Level Interconnects and Methods of Fab...
- Publication number 20240395894
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao Chu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT METALLIZATION PROCESS
- Publication number 20240395611
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien-Pei CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...
- Publication number 20240387658
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE COPPER INTERCONNECTS
- Publication number 20240387382
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Cheng CHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240387661
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20240387645
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NFET with Aluminum-Free Work-Function Layer and Method Forming Same
- Publication number 20240379777
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD
- Publication number 20240379776
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM-UP METAL NITRIDE FORMATION
- Publication number 20240379368
- Publication date Nov 14, 2024
- ASM IP HOLDING B.V.
- Eric James Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE WORK FUNCTION LAYER FORMATION USING SAME WORK FUNCTION MA...
- Publication number 20240363718
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capping Layer For Liner-Free Conductive Structures
- Publication number 20240355741
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuen-Shin LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MOLYBDENUM FILL SCHEME FOR LOW RESISTIVITY SEMICONDUCTOR APP...
- Publication number 20240355673
- Publication date Oct 24, 2024
- Applied Materials, Inc.
- Wei LEI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355670
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Han HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING RESISTIVITY AND CRYSTALLINITY OF LOW-RESISTA...
- Publication number 20240355626
- Publication date Oct 24, 2024
- ULVAC, Inc.
- Chang Min SHIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Metal Gates and Methods of Forming Thereby
- Publication number 20240347392
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SUPERJUNCTION TRENCH GATE MOSFET
- Publication number 20240332402
- Publication date Oct 3, 2024
- Hua Hong Semiconductor (Wuxi) Limited
- Zhaozhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240334847
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE CAPPING LAYER FOR AREA SELECTIVE DEPOSITION
- Publication number 20240332072
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Andrea Leoncini
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20240312792
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-An HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...
- Publication number 20240304697
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER
- Publication number 20240304696
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM
- Publication number 20240297075
- Publication date Sep 5, 2024
- LAM RESEARCH CORPORATION
- Shruti Vivek THOMBARE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUT...
- Publication number 20240279807
- Publication date Aug 22, 2024
- Kokusai Electric Corporation
- Takuya JODA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATION SOLUTION FOR NAND DEEP CONTACT GAP FILL
- Publication number 20240282631
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Xi CEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD
- Publication number 20240282698
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER FEATURE FILL
- Publication number 20240282580
- Publication date Aug 22, 2024
- LAM RESEARCH CORPORATION
- Xiaolan BA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DEPOSITION OF METAL FILMS
- Publication number 20240271281
- Publication date Aug 15, 2024
- LAM RESEARCH CORPORATION
- Joshua COLLINS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

the conductive layers comprising transition metals

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of processing substrate, method of manufacturing semiconduct...

Semiconductor structure and a manufacturing method thereof

Methods of selective deposition

Tungsten molybdenum structures

Method of processing substrate, method of manufacturing semiconduct...

Deposition of tungsten on molybdenum templates

Contact over active gate structures for advanced integrated circuit...

Methods for forming recesses in source/drain regions and devices fo...

Deposition method

Memories having vertically stacked conductive filled structures

Methods for forming a metallic film on a substrate by cyclical depo...

Butted contacts and methods of fabricating the same in semiconducto...

Method of manufacturing semiconductor device, substrate processing...

Composite work function layer formation using same work function ma...

Method of growing two-dimensional transition metal chalcogenide fil...

Molybdenum deposition

Bottom-up metal nitride formation

Method for forming semiconductor structure

Semiconductor device having via sidewall adhesion with encapsulant

Rapid flush purging during atomic layer deposition

Fluorine-free tungsten ALD for dielectric selectivity improvement

Method for forming barrier layer in semiconductor structure

Gate cut and fin trim isolation for advanced integrated circuit str...

Method for forming film layer

Capping layer for liner-free conductive structures

PMOS high-k metal gates

Method of making a semiconductor device and semiconductor device

Metal gates and methods of forming thereby

Semiconductor device structure

Method of manufacturing semiconductor devices and semiconductor dev...

Patents Applicationslast 30 patents

Methods of Filling Openings with Conductive Material, and Assemblie...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Molybdenum-Containing Device-Level Interconnects and Methods of Fab...

CONTACT METALLIZATION PROCESS

BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...

LOW-RESISTANCE COPPER INTERCONNECTS

Semiconductor Device and Method

CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES

NFET with Aluminum-Free Work-Function Layer and Method Forming Same

SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD

BOTTOM-UP METAL NITRIDE FORMATION

COMPOSITE WORK FUNCTION LAYER FORMATION USING SAME WORK FUNCTION MA...

Capping Layer For Liner-Free Conductive Structures

HYBRID MOLYBDENUM FILL SCHEME FOR LOW RESISTIVITY SEMICONDUCTOR APP...

SEMICONDUCTOR DEVICE

METHOD FOR CONTROLLING RESISTIVITY AND CRYSTALLINITY OF LOW-RESISTA...

Metal Gates and Methods of Forming Thereby

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

METHOD FOR MANUFACTURING SUPERJUNCTION TRENCH GATE MOSFET

VIA STRUCTURE AND METHODS OF FORMING THE SAME

PROTECTIVE CAPPING LAYER FOR AREA SELECTIVE DEPOSITION

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE WITH CAPPING LAYER

LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUT...

INTEGRATION SOLUTION FOR NAND DEEP CONTACT GAP FILL

MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD

MULTI-LAYER FEATURE FILL

DEPOSITION OF METAL FILMS