the conductor comprising a metal or metallic silicode formed by deposition, e.g. sputter deposition

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CPC
H01L21/28061

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28061the conductor comprising a metal or metallic silicode formed by deposition, e.g. sputter deposition

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with protection layer and method for fabricati...
- Patent number 12,112,950
- Issue date Oct 8, 2024
- NANYA TECHNOLOGY CORPORATION
- Ming-Hung Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective formation of titanium silicide and titanium nitride by hy...
- Patent number 11,972,951
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with different threshold voltages
- Patent number 11,848,368
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,799,012
- Issue date Oct 24, 2023
- United Microelectronics Corp.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including capacitors including multiple dielectric mate...
- Patent number 11,799,038
- Issue date Oct 24, 2023
- Lodestar Licensing Group LLC
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,784,051
- Issue date Oct 10, 2023
- SK Hynix Inc.
- Young-Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gate boundary isolation
- Patent number 11,658,216
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-threshold gate structure
- Patent number 11,489,056
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,404,326
- Issue date Aug 2, 2022
- SK Hynix Inc.
- Keon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices including capacitors with multiple dielectric ma...
- Patent number 11,374,132
- Issue date Jun 28, 2022
- Micron Technology, Inc.
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,367,795
- Issue date Jun 21, 2022
- Au Optronics Corporation
- Ting-Fong Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective formation of titanium silicide and titanium nitride by hy...
- Patent number 11,295,956
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,183,579
- Issue date Nov 23, 2021
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with different threshold voltages
- Patent number 11,152,477
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,152,212
- Issue date Oct 19, 2021
- SK Hynix Inc.
- Young-Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive line construction, memory circuitry, and method of formi...
- Patent number 11,075,274
- Issue date Jul 27, 2021
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with metal contacts including crystalline alloys
- Patent number 11,056,593
- Issue date Jul 6, 2021
- Intel Corporation
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for silicide deposition
- Patent number 10,971,366
- Issue date Apr 6, 2021
- Applied Materials, Inc.
- Xuebin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cryogenic semiconductor device having buried channel array transistor
- Patent number 10,964,794
- Issue date Mar 30, 2021
- SK hynix Inc.
- Min-Soo Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming later insulating films for MTJ
- Patent number 10,910,215
- Issue date Feb 2, 2021
- Tokyo Electron Limited
- Naoki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of lowering wordline resistance
- Patent number 10,854,511
- Issue date Dec 1, 2020
- Applied Materials, Inc.
- Yihong Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistor for dynamic random access memory
- Patent number 10,840,248
- Issue date Nov 17, 2020
- United Microelectronics Corp.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices including capacitor structures and methods...
- Patent number 10,833,206
- Issue date Nov 10, 2020
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,804,365
- Issue date Oct 13, 2020
- United Microelectronics Corp.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks
- Patent number 10,777,651
- Issue date Sep 15, 2020
- Micron Technology, Inc.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure, method of fabricating the same, and semiconduc...
- Patent number 10,685,959
- Issue date Jun 16, 2020
- Samsung Electronics Co., Ltd.
- Dong-kak Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective formation of titanium silicide and titanium nitride by hy...
- Patent number 10,685,842
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for a power transistor having a Schottky or Sch...
- Patent number 10,510,869
- Issue date Dec 17, 2019
- SILICET, LLC
- Gary M. Dolny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit line gate and manufacturing method thereof
- Patent number 10,497,705
- Issue date Dec 3, 2019
- United Microelectronics Corp.
- Pin-Hong Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING LOW RESISTIVITY CONTACTS
- Publication number 20240379363
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Jianqiu GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20240379773
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...
- Publication number 20240304697
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER
- Publication number 20240304696
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Formation Of Titanium Silicide And Titanium Nitride By Hy...
- Publication number 20240249948
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A CONDUCTI...
- Publication number 20240079456
- Publication date Mar 7, 2024
- SK HYNIX INC.
- Jae Man YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING CAPACITORS INCLUDING MULTIPLE DIELECTRIC MATE...
- Publication number 20240038904
- Publication date Feb 1, 2024
- Lodestar Licensing Group LLC
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20230299153
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROTECTION LAYER AND METHOD FOR FABRICATI...
- Publication number 20230253209
- Publication date Aug 10, 2023
- NANYA TECHNOLOGY CORPORATION
- MING-HUNG HSIEH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROTECTION LAYER
- Publication number 20230253210
- Publication date Aug 10, 2023
- NANYA TECHNOLOGY CORPORATION
- MING-HUNG HSIEH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTI-THRESHOLD GATE STRUCTURE
- Publication number 20220359698
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
APPARATUSES INCLUDING CAPACITORS, AND RELATED METHODS
- Publication number 20220320351
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HY...
- Publication number 20220230884
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20220223695
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20220059670
- Publication date Feb 24, 2022
- SK hynix Inc.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES
- Publication number 20220037499
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220013363
- Publication date Jan 13, 2022
- SK hynix Inc.
- Young-Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210358815
- Publication date Nov 18, 2021
- SK HYNIX INC.
- Keon YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING CAPACITORS, AND RELATED SYSTEMS
- Publication number 20210074864
- Publication date Mar 11, 2021
- Micron Technology, Inc.
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210050454
- Publication date Feb 18, 2021
- AU OPTRONICS CORPORATION
- Ting-Fong Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200403077
- Publication date Dec 24, 2020
- UNITED MICROELECTRONICS CORP.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20200395461
- Publication date Dec 17, 2020
- SK HYNIX INC.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HY...
- Publication number 20200294807
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200286734
- Publication date Sep 10, 2020
- SK HYNIX INC.
- Young-Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Line Construction, Memory Circuitry, And Method Of Formi...
- Publication number 20200235219
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC STRUCTURES INCLUDING CAPACITOR STRUTURES AND METHOD...
- Publication number 20200185544
- Publication date Jun 11, 2020
- Micron Technology, Inc.
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
CRYOGENIC SEMICONDUCTOR DEVICE HAVING BURIED CHANNEL ARRAY TRANSISTOR
- Publication number 20190393320
- Publication date Dec 26, 2019
- SK HYNIX INC.
- Min-Soo YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HY...
- Publication number 20190355585
- Publication date Nov 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190341494
- Publication date Nov 7, 2019
- AU OPTRONICS CORPORATION
- Ting-Fong Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIT LINE GATE AND MANUFACTURING METHOD THEREOF
- Publication number 20190319031
- Publication date Oct 17, 2019
- UNITED MICROELECTRONICS CORP.
- Pin-Hong Chen
- H01 - BASIC ELECTRIC ELEMENTS

the conductor comprising a metal or metallic silicode formed by deposition, e.g. sputter deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with protection layer and method for fabricati...

Selective formation of titanium silicide and titanium nitride by hy...

Semiconductor device having buried gate structure and method for fa...

Transistors with different threshold voltages

Semiconductor device and method for fabricating the same

Apparatuses including capacitors including multiple dielectric mate...

Semiconductor device and method for fabricating the same

Method and structure for metal gate boundary isolation

Semiconductor device with multi-threshold gate structure

Semiconductor device and method for fabricating the same

Electronic devices including capacitors with multiple dielectric ma...

Semiconductor device and manufacturing method thereof

Selective formation of titanium silicide and titanium nitride by hy...

Semiconductor device having buried gate structure and method for fa...

Transistors with different threshold voltages

Semiconductor device and method for fabricating the same

Conductive line construction, memory circuitry, and method of formi...

Semiconductor devices with metal contacts including crystalline alloys

Methods for silicide deposition

Cryogenic semiconductor device having buried channel array transistor

Method of forming later insulating films for MTJ

Methods of lowering wordline resistance

Resistor for dynamic random access memory

Microelectronic devices including capacitor structures and methods...

Semiconductor device and method for fabricating the same

Gate stacks

Electrode structure, method of fabricating the same, and semiconduc...

Selective formation of titanium silicide and titanium nitride by hy...

Devices and methods for a power transistor having a Schottky or Sch...

Bit line gate and manufacturing method thereof

Patents Applicationslast 30 patents

METHODS FOR FORMING LOW RESISTIVITY CONTACTS

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE WITH CAPPING LAYER

Selective Formation Of Titanium Silicide And Titanium Nitride By Hy...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A CONDUCTI...

APPARATUSES INCLUDING CAPACITORS INCLUDING MULTIPLE DIELECTRIC MATE...

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SEMICONDUCTOR DEVICE WITH PROTECTION LAYER AND METHOD FOR FABRICATI...

SEMICONDUCTOR DEVICE WITH PROTECTION LAYER

SEMICONDUCTOR DEVICE WITH MULTI-THRESHOLD GATE STRUCTURE

APPARATUSES INCLUDING CAPACITORS, AND RELATED METHODS

SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HY...

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

ELECTRONIC DEVICES INCLUDING CAPACITORS, AND RELATED SYSTEMS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HY...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Conductive Line Construction, Memory Circuitry, And Method Of Formi...

MICROELECTRONIC STRUCTURES INCLUDING CAPACITOR STRUTURES AND METHOD...

CRYOGENIC SEMICONDUCTOR DEVICE HAVING BURIED CHANNEL ARRAY TRANSISTOR

SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HY...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BIT LINE GATE AND MANUFACTURING METHOD THEREOF