the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer

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H01L21/28052

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28052the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,973,124
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage polysilicon gate in high-K metal gate device
- Patent number 11,950,413
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,942,475
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing microelectronic components
- Patent number 11,929,290
- Issue date Mar 12, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching platinum-containing thin film using protective cap layer
- Patent number 11,929,423
- Issue date Mar 12, 2024
- Texas Instruments Incorporated
- Sebastian Meier
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,916,060
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silicidation of semiconductor device, and corresponding...
- Patent number 11,869,772
- Issue date Jan 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolator
- Patent number 11,817,346
- Issue date Nov 14, 2023
- Kabushiki Kaisha Toshiba
- Akira Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,799,012
- Issue date Oct 24, 2023
- United Microelectronics Corp.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a string selection line g...
- Patent number 11,792,994
- Issue date Oct 17, 2023
- Samsung Electronics Co., Ltd.
- Kohji Kanamori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with shallow trench isolation features with...
- Patent number 11,764,225
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,735,635
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Han Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 11,721,630
- Issue date Aug 8, 2023
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,715,734
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 11,690,227
- Issue date Jun 27, 2023
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET transistors with hybrid contact
- Patent number 11,646,371
- Issue date May 9, 2023
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming doped silicide power devices
- Patent number 11,605,741
- Issue date Mar 14, 2023
- Applied Materials, Inc.
- Joshua S. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,569,369
- Issue date Jan 31, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Shun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage polysilicon gate in high-K metal gate device
- Patent number 11,569,251
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method for manufacturing a device including silicides...
- Patent number 11,563,020
- Issue date Jan 24, 2023
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having semiconductor alloy layer adjacent a ga...
- Patent number 11,380,762
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a string selection line g...
- Patent number 11,374,017
- Issue date Jun 28, 2022
- Samsung Electronics Co., Ltd.
- Kohji Kanamori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure
- Patent number 11,335,691
- Issue date May 17, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Ying-Tsung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 11,335,639
- Issue date May 17, 2022
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for LDMOS and other MOS transistors with hybrid contact
- Patent number 11,322,611
- Issue date May 3, 2022
- Silicet, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making memory cells, high voltage devices and logic devic...
- Patent number 11,322,507
- Issue date May 3, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacture method thereof
- Patent number 11,251,130
- Issue date Feb 15, 2022
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Chuan Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,232,990
- Issue date Jan 25, 2022
- Renesas Electronics Corporation
- Yuta Mizukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for manufacturing same
- Patent number 11,114,561
- Issue date Sep 7, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Zhaozhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,094,795
- Issue date Aug 17, 2021
- NANYA TECHNOLOGY CORPORATION
- Chun-Shun Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20240008279
- Publication date Jan 4, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230378316
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20230378183
- Publication date Nov 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20230326860
- Publication date Oct 12, 2023
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...
- Publication number 20230245891
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230138401
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE
- Publication number 20230109700
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...
- Publication number 20230058216
- Publication date Feb 23, 2023
- Peking University
- Qianqian Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHODS FOR INTEGRATED CIRCUITS
- Publication number 20230049714
- Publication date Feb 16, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Yi Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Transistor Structures
- Publication number 20220406662
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20220399372
- Publication date Dec 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE W...
- Publication number 20220336594
- Publication date Oct 20, 2022
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220285158
- Publication date Sep 8, 2022
- SK HYNIX INC.
- Jae Chun CHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20220246529
- Publication date Aug 4, 2022
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A STRING SELECTION LINE G...
- Publication number 20220246624
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- KOHJI KANAMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20220199803
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DOPED SILICIDE POWER DEVICES
- Publication number 20220165574
- Publication date May 26, 2022
- Applied Materials, Inc.
- Joshua S. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURE METHOD THEREOF
- Publication number 20220130762
- Publication date Apr 28, 2022
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Chuan Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATOR
- Publication number 20220076990
- Publication date Mar 10, 2022
- Kabushiki Kaisha Toshiba
- Akira Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MICROELECTRONIC COMPONENTS
- Publication number 20220068724
- Publication date Mar 3, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Fabrice NEMOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220052041
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Memory Cells, High Voltage Devices And Logic Devic...
- Publication number 20220052059
- Publication date Feb 17, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210343849
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Han TSAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20210328042
- Publication date Oct 21, 2021
- NANYA TECHNOLOGY CORPORATION
- CHUN-SHUN HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER
- Publication number 20210313179
- Publication date Oct 7, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sebastian Meier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20210296343
- Publication date Sep 23, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SILICIDATION OF SEMICONDUCTOR DEVICE, AND CORRESPONDING...
- Publication number 20210296129
- Publication date Sep 23, 2021
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR RELIABLY FORMING MICROELECTRONIC DEVICES WITH CONDUCTIV...
- Publication number 20210296167
- Publication date Sep 23, 2021
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS

the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

High voltage polysilicon gate in high-K metal gate device

High voltage transistor structure

Method of manufacturing microelectronic components

Etching platinum-containing thin film using protective cap layer

Semiconductor device having improved electrostatic discharge protec...

Method for silicidation of semiconductor device, and corresponding...

Isolator

Semiconductor device and method for fabricating the same

Three-dimensional memory device including a string selection line g...

Field effect transistor with shallow trench isolation features with...

Semiconductor device and fabrication method thereof

Method of forming stacked trench contacts and structures formed the...

Semiconductor device having improved electrostatic discharge protec...

Method of forming high-voltage transistor with thin gate poly

MOSFET transistors with hybrid contact

Methods of forming doped silicide power devices

Method for manufacturing a semiconductor device

High voltage polysilicon gate in high-K metal gate device

Semiconductor method for manufacturing a device including silicides...

Semiconductor device having semiconductor alloy layer adjacent a ga...

Three-dimensional memory device including a string selection line g...

Memory structure

Method of forming stacked trench contacts and structures formed the...

Methods for LDMOS and other MOS transistors with hybrid contact

Method of making memory cells, high voltage devices and logic devic...

Semiconductor structure and manufacture method thereof

Semiconductor device and method of manufacturing the same

LDMOS device and method for manufacturing same

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

Method of Forming High-Voltage Transistor with Thin Gate Poly

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE

A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...

ETCHING METHODS FOR INTEGRATED CIRCUITS

High Voltage Transistor Structures

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE W...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A STRING SELECTION LINE G...

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

METHODS OF FORMING DOPED SILICIDE POWER DEVICES

SEMICONDUCTOR STRUCTURE AND MANUFACTURE METHOD THEREOF

ISOLATOR

METHOD OF MANUFACTURING MICROELECTRONIC COMPONENTS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Method Of Making Memory Cells, High Voltage Devices And Logic Devic...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER

Method of Forming High-Voltage Transistor with Thin Gate Poly

METHOD FOR SILICIDATION OF SEMICONDUCTOR DEVICE, AND CORRESPONDING...

METHODS FOR RELIABLY FORMING MICROELECTRONIC DEVICES WITH CONDUCTIV...