the conductor material next to the insulator being a composite material

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H01L29/4966

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/4966the conductor material next to the insulator being a composite material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,294,022
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jui-Fen Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having a work function material gradient
- Patent number 12,283,616
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,283,613
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer photo etching mask including organic and inorganic mate...
- Patent number 12,272,553
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with a work-function...
- Patent number 12,272,556
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Shiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,272,735
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with nano sheet transistor and method for fabr...
- Patent number 12,266,707
- Issue date Apr 1, 2025
- SK Hynix Inc.
- Yun Hyuck Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 12,266,571
- Issue date Apr 1, 2025
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,266,711
- Issue date Apr 1, 2025
- SK Hynix Inc.
- Beom-Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,255,104
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate structure for high voltage device
- Patent number 12,249,629
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped work function metal layer
- Patent number 12,249,604
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hsiung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming structures including vanadium boride and vanadiu...
- Patent number 12,243,747
- Issue date Mar 4, 2025
- ASM IP Holding B.V.
- Petro Deminskyi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure integrating logic element and memory element
- Patent number 12,245,418
- Issue date Mar 4, 2025
- Chun-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gate boundary isolation
- Patent number 12,243,919
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and method of forming
- Patent number 12,243,925
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having work-function metal and method of formi...
- Patent number 12,243,785
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 12,243,945
- Issue date Mar 4, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium aluminum and tantalum aluminum thin films
- Patent number 12,237,392
- Issue date Feb 25, 2025
- ASM IP Holding B.V.
- Suvi Haukka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,398
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vanadium nitride layer and structure including th...
- Patent number 12,237,171
- Issue date Feb 25, 2025
- ASM IP Holding B.V.
- Giuseppe Alessio Verni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 12,237,393
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,394
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate based 3-terminal analog synapse device
- Patent number 12,237,426
- Issue date Feb 25, 2025
- Korea Advanced Institute of Science and Technology
- Shinhyun Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transistor device having a cell field and method of fabricating a g...
- Patent number 12,230,706
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing a molybdenum nitride film on a surface of a...
- Patent number 12,215,416
- Issue date Feb 4, 2025
- ASM IP Holding B.V.
- Eric Christopher Stevens
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming FinFET devices with a fin top hardmask
- Patent number 12,211,921
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STRUCTURES FOR THRESHOLD VOLTAGE CONTROL
- Publication number 20250062128
- Publication date Feb 20, 2025
- ASM IP HOLDING B.V.
- Maart van Druenen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20250056860
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20250029836
- Publication date Jan 23, 2025
- KIOXIA Corporation
- Masayuki KITAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD
- Publication number 20250022719
- Publication date Jan 16, 2025
- Hitachi High-Tech Corporation
- Thi-Thuy-Nga NGUYEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022929
- Publication date Jan 16, 2025
- Japan Display Inc.
- Hajime WATAKABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015158
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...
- Publication number 20240429232
- Publication date Dec 26, 2024
- STMicroelectronics International N.V.
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420967
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING GATE SPACER PR...
- Publication number 20240412975
- Publication date Dec 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CHROMIUM NITRIDE LAYER AND STRUCTURE INCLUDING TH...
- Publication number 20240395555
- Publication date Nov 28, 2024
- ASM IP HOLDING B.V.
- Qi Xie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Features of Semiconductor Devices and Methods of Forming...
- Publication number 20240395554
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu Shan Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES
- Publication number 20240395629
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of a Semiconductor Device and Method of Forming Same
- Publication number 20240387294
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING METAL GATE DEVICES AND RESULTING STRUCTURES
- Publication number 20240387678
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387679
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Structures For Semiconductor Devices
- Publication number 20240387726
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20240387712
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240387741
- Publication date Nov 21, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
- Publication number 20240387293
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Anhow CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT
- Publication number 20240387178
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379798
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of Semiconductor Device and Method of Forming Same
- Publication number 20240379812
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20240379790
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FORMATION OF METAL GATE MODULATORS
- Publication number 20240379448
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20240379773
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS

the conductor material next to the insulator being a composite material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

FinFET having a work function material gradient

Gate structures in transistors and method of forming same

Multi-layer photo etching mask including organic and inorganic mate...

Method of manufacturing a semiconductor device with a work-function...

Transistor gate structures and methods of forming the same

Semiconductor device with nano sheet transistor and method for fabr...

Self-aligned contacts

Semiconductor device and method for fabricating the same

Semiconductor device and method of manufacture

Field plate structure for high voltage device

Semiconductor device having doped work function metal layer

Methods of forming structures including vanadium boride and vanadiu...

Semiconductor structure integrating logic element and memory element

Method and structure for metal gate boundary isolation

Transistor gates and method of forming

Semiconductor device having work-function metal and method of formi...

Semiconductor device and method for manufacturing semiconductor device

Titanium aluminum and tantalum aluminum thin films

Semiconductor device and method for fabricating the same

Method of forming vanadium nitride layer and structure including th...

Minimizing shorting between FinFET epitaxial regions

Method of fabricating a semiconductor device

Semiconductor device and method for fabricating the same

Floating gate based 3-terminal analog synapse device

Transistor device having a cell field and method of fabricating a g...

Methods for depositing a molybdenum nitride film on a surface of a...

Gate structures for semiconductor devices

Semiconductor device and a method for fabricating the same

Method for forming FinFET devices with a fin top hardmask

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

METHOD OF FORMING STRUCTURES FOR THRESHOLD VOLTAGE CONTROL

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCT...

ETCHING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD AND STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING GATE SPACER PR...

METHOD OF FORMING CHROMIUM NITRIDE LAYER AND STRUCTURE INCLUDING TH...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Conductive Features of Semiconductor Devices and Methods of Forming...

TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES

FinFET Device With High-K Metal Gate Stack

Gate Structure of a Semiconductor Device and Method of Forming Same

METHOD FOR FABRICATING METAL GATE DEVICES AND RESULTING STRUCTURES

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

Dual Gate Structures For Semiconductor Devices

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING

TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT

FINFET DEVICE AND METHOD OF FORMING SAME

TRANSISTOR GATE STRUCTURES

Gate Structure of Semiconductor Device and Method of Forming Same

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

IN-SITU FORMATION OF METAL GATE MODULATORS

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION