the conductor material next to the insulator being a silicon layer

Industry

CPC
H01L29/4916

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4916the conductor material next to the insulator being a silicon layer

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,294,020
- Issue date May 6, 2025
- Kabushiki Kaisha Toshiba
- Takafumi Deguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,217
- Issue date Mar 25, 2025
- Fuji Electric Co., Ltd.
- Masakazu Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,201
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Young-Hun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices having a silicided polysi...
- Patent number 12,243,935
- Issue date Mar 4, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming and monitoring quality of the same
- Patent number 12,237,417
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 12,236,180
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jung Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Power device with partitioned active regions
- Patent number 12,224,343
- Issue date Feb 11, 2025
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having word line structure
- Patent number 12,224,328
- Issue date Feb 11, 2025
- NANYA TECHNOLOGY CORPORATION
- Cheng-Yan Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, and method for manufacturing semiconductor de...
- Patent number 12,218,237
- Issue date Feb 4, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yuki Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and poly gate
- Patent number 12,217,975
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted body contact for SOI transistor and amplifier circuit
- Patent number 12,205,954
- Issue date Jan 21, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective single diffusion/electrical barrier
- Patent number 12,199,152
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures and semiconductor devices including the same
- Patent number 12,183,803
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Jaejin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device
- Patent number 12,183,833
- Issue date Dec 31, 2024
- Winbond Electronics Corp.
- Cheng-Ta Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite word line structure and method...
- Patent number 12,160,988
- Issue date Dec 3, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with multiple layers for improved performanc...
- Patent number 12,142,660
- Issue date Nov 12, 2024
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with graphene-based ele...
- Patent number 12,132,097
- Issue date Oct 29, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 12,132,108
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device structure with gate stacks
- Patent number 12,132,111
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strap-cell architecture for embedded memory
- Patent number 12,101,931
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Tuo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical string driver with extended gate junction structure
- Patent number 12,089,412
- Issue date Sep 10, 2024
- INTEL NDTM US LLC
- Dong Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate electrodes with voids
- Patent number 12,087,839
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in a level shifter with electrostatic discharg...
- Patent number 12,057,442
- Issue date Aug 6, 2024
- MagnaChip Semiconductor, Ltd.
- Kyong Jin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit containing a decoy structure
- Patent number 12,051,656
- Issue date Jul 30, 2024
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure for memory device
- Patent number 12,046,649
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Szu-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,040,374
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Kazuhiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including emitter regions and method of manufa...
- Patent number 12,034,065
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low Leakage FET
- Publication number 20250072062
- Publication date Feb 27, 2025
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANC...
- Publication number 20250040229
- Publication date Jan 30, 2025
- Pakal Technologies, Inc.
- Paul Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF, INTEGRATED CIR...
- Publication number 20250006833
- Publication date Jan 2, 2025
- Huawei Digital Power Technologies Co., Ltd.
- Runtao Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURES FOR MOSFETS
- Publication number 20240413196
- Publication date Dec 12, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Sauvik CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Structures For Semiconductor Devices
- Publication number 20240387726
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACKS
- Publication number 20240387733
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...
- Publication number 20240387722
- Publication date Nov 21, 2024
- NOVUS SEMICONDUCTORS CO., LTD.
- Hang GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY
- Publication number 20240373628
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Tuo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT SCALING RATIO IN FEOL / MOL/ BEOL
- Publication number 20240371765
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Yao Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE GATE STRUCTURES
- Publication number 20240363717
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...
- Publication number 20240365537
- Publication date Oct 31, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONTAINING A DECOY STRUCTURE
- Publication number 20240347481
- Publication date Oct 17, 2024
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240347612
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SZU-YU WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20240312792
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-An HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...
- Publication number 20240304697
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER
- Publication number 20240304696
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240290826
- Publication date Aug 29, 2024
- SK HYNIX INC.
- Il Do KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240284662
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Heejae CHAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240282850
- Publication date Aug 22, 2024
- Fuji Electric Co., Ltd.
- Masakazu BABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Based Power Semiconductor Device Having Increased Current Carry...
- Publication number 20240282821
- Publication date Aug 22, 2024
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20240274659
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND-LIKE CARBON COATING FOR PASSIVE AND ACTIVE ELECTRONICS
- Publication number 20240258400
- Publication date Aug 1, 2024
- HONEYWELL FEDERAL MANUFACTURING & TECHNOLOGIES, LLC
- Erik Joseph Timpson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240250138
- Publication date Jul 25, 2024
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
- Publication number 20240234529
- Publication date Jul 11, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240213342
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Junghwan HUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR COMPLEMENTARY MOSFET STRUCTURE TO REDUCE LEAKAGES AND PLANAR...
- Publication number 20240213348
- Publication date Jun 27, 2024
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY
- Publication number 20240178290
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Megan Lydon-Nuhfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240170548
- Publication date May 23, 2024
- RENESAS ELECTRONICS CORPORATION
- Hiroya SHIMOYAMA
- H01 - BASIC ELECTRIC ELEMENTS

the conductor material next to the insulator being a silicon layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device

High electron mobility transistor devices having a silicided polysi...

Minimizing shorting between FinFET epitaxial regions

FinFET device and method of forming and monitoring quality of the same

Integrated circuit and method of manufacturing the same

Power device with partitioned active regions

Semiconductor device having word line structure

Semiconductor device, and method for manufacturing semiconductor de...

Semiconductor device having metal gate and poly gate

Butted body contact for SOI transistor and amplifier circuit

Selective single diffusion/electrical barrier

Gate structures and semiconductor devices including the same

Flash memory device

Semiconductor device with composite word line structure and method...

Semiconductor device with semiconductor mesas between adjacent gate...

Insulated trench gates with multiple layers for improved performanc...

Method for fabricating semiconductor device with graphene-based ele...

Dual gate structures for semiconductor devices

Formation method of semiconductor device structure with gate stacks

Strap-cell architecture for embedded memory

Low leakage FET

Vertical string driver with extended gate junction structure

Transistor gate electrodes with voids

Semiconductor device in a level shifter with electrostatic discharg...

Integrated circuit containing a decoy structure

Method for forming semiconductor structure for memory device

Semiconductor device

Semiconductor device including emitter regions and method of manufa...

Patents Applicationslast 30 patents

Low Leakage FET

INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANC...

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF, INTEGRATED CIR...

TERMINATION STRUCTURES FOR MOSFETS

Dual Gate Structures For Semiconductor Devices

SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACKS

SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...

STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY

DIFFERENT SCALING RATIO IN FEOL / MOL/ BEOL

SEMICONDUCTOR DEVICE GATE STRUCTURES

SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...

INTEGRATED CIRCUIT CONTAINING A DECOY STRUCTURE

SEMICONDUCTOR STRUCTURE

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE WITH CAPPING LAYER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

MOS-Based Power Semiconductor Device Having Increased Current Carry...

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

DIAMOND-LIKE CARBON COATING FOR PASSIVE AND ACTIVE ELECTRONICS

SEMICONDUCTOR DEVICE

WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

PLANAR COMPLEMENTARY MOSFET STRUCTURE TO REDUCE LEAKAGES AND PLANAR...

IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME