the device being a capacitor or a resistor

Industry

CPC
H01L29/7408

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7408the device being a capacitor or a resistor

Industries

Patents Grantslast 30 patents

Information Patent Grant
SCR structure for ESD protection in SOI technologies
- Patent number 11,967,639
- Issue date Apr 23, 2024
- Infineon Technologies AG
- Gernot Langguth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection device
- Patent number 11,916,063
- Issue date Feb 27, 2024
- SK Hynix Inc.
- Joung Cheul Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifier
- Patent number 11,869,885
- Issue date Jan 9, 2024
- Infineon Technologies AG
- Christian Cornelius Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,848,386
- Issue date Dec 19, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,837,664
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,757,043
- Issue date Sep 12, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection device
- Patent number 11,742,343
- Issue date Aug 29, 2023
- SK Hynix Inc.
- Joung Cheul Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid turn-off circuit in static transfer switch
- Patent number 11,742,849
- Issue date Aug 29, 2023
- ABB Schweiz AG
- Yuzhi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor
- Patent number 11,699,745
- Issue date Jul 11, 2023
- Macronix International Co., Ltd.
- Shih-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuron circuit using p-n-p-n diode without external bias voltages
- Patent number 11,531,872
- Issue date Dec 20, 2022
- Korea University Research and Business Foundation
- Sang Sig Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon controlled rectifier
- Patent number 11,508,717
- Issue date Nov 22, 2022
- Infineon Technologies AG
- Christian Cornelius Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,469,327
- Issue date Oct 11, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device for ESD protection
- Patent number 11,444,077
- Issue date Sep 13, 2022
- STMicroelectronics S.A.
- Jean Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,444,203
- Issue date Sep 13, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,417,768
- Issue date Aug 16, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,411,116
- Issue date Aug 9, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,398,570
- Issue date Jul 26, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection for electronic systems subject to...
- Patent number 11,362,203
- Issue date Jun 14, 2022
- Analog Devices, Inc.
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,355,643
- Issue date Jun 7, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,349,031
- Issue date May 31, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage tolerant circuit architecture for applications subject...
- Patent number 11,342,323
- Issue date May 24, 2022
- Analog Devices, Inc.
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,296,228
- Issue date Apr 5, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,289,607
- Issue date Mar 29, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,289,608
- Issue date Mar 29, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...
- Publication number 20240322023
- Publication date Sep 26, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Sang Dong YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT COMPENSATION IN A MEMORY SYSTEM
- Publication number 20240274720
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Hiroshi Akamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROL...
- Publication number 20240222357
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Kyoungil DO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROL...
- Publication number 20240145463
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Kyoungil DO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Controlled Rectifier
- Publication number 20240096875
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Christian Cornelius Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCR STRUCTURE FOR ESD PROTECTION IN SOI TECHNOLOGIES
- Publication number 20230238454
- Publication date Jul 27, 2023
- INFINEON TECHNOLOGIES AG
- Gernot Langguth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...
- Publication number 20230231055
- Publication date Jul 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215952
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215953
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230163216
- Publication date May 25, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155028
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155029
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230142605
- Publication date May 11, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR
- Publication number 20230133016
- Publication date May 4, 2023
- Macronix International Co., Ltd.
- Shih-Yu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230128526
- Publication date Apr 27, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID TURN-OFF CIRCUIT IN STATIC TRANSFER SWITCH
- Publication number 20230128049
- Publication date Apr 27, 2023
- ABB Schweiz AG
- Yuzhi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230123515
- Publication date Apr 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230057354
- Publication date Feb 23, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Controlled Rectifier
- Publication number 20220399327
- Publication date Dec 15, 2022
- Christian Cornelius Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20220077319
- Publication date Mar 10, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
- Publication number 20210366897
- Publication date Nov 25, 2021
- SK HYNIX INC.
- Joung Cheul CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
- Publication number 20210366898
- Publication date Nov 25, 2021
- SK HYNIX INC.
- Joung Cheul CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343872
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343871
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343873
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343874
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210328067
- Publication date Oct 21, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210320211
- Publication date Oct 14, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURON CIRCUIT USING P-N-P-N DIODE WITHOUT EXTERNAL BIAS VOLTAGES
- Publication number 20210150320
- Publication date May 20, 2021
- Korea University Research and Business Foundation
- Sang Sig KIM
- G06 - COMPUTING CALCULATING COUNTING

the device being a capacitor or a resistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SCR structure for ESD protection in SOI technologies

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Electrostatic discharge protection device

Manganese-doped perovskite layers and semiconductor device incorpor...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Silicon controlled rectifier

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Electrostatic discharge protection device

Rapid turn-off circuit in static transfer switch

Thyristor

Neuron circuit using p-n-p-n diode without external bias voltages

Silicon controlled rectifier

Doped polar layers and semiconductor device incorporating same

Electronic device for ESD protection

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Electrical overstress protection for electronic systems subject to...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

High voltage tolerant circuit architecture for applications subject...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Patents Applicationslast 30 patents

THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...

CONCURRENT COMPENSATION IN A MEMORY SYSTEM

DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROL...

DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROL...

Silicon Controlled Rectifier

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SCR STRUCTURE FOR ESD PROTECTION IN SOI TECHNOLOGIES

MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

THYRISTOR

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

RAPID TURN-OFF CIRCUIT IN STATIC TRANSFER SWITCH

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

Silicon Controlled Rectifier

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

ELECTROSTATIC DISCHARGE PROTECTION DEVICE

ELECTROSTATIC DISCHARGE PROTECTION DEVICE

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

NEURON CIRCUIT USING P-N-P-N DIODE WITHOUT EXTERNAL BIAS VOLTAGES