the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

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CPC
H01L29/66037

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66037the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

Industries

Patents Grantslast 30 patents

Information Patent Grant
Doped encapsulation material for diamond semiconductors
- Patent number 11,152,483
- Issue date Oct 19, 2021
- Massachusetts Institute of Technology
- Michael Geis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,665,678
- Issue date May 26, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel FET with self-aligned heterojunction
- Patent number 10,622,489
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Chun Wing Yeung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and manufacturing method thereof
- Patent number 10,600,917
- Issue date Mar 24, 2020
- Huawei Technologies Co., Ltd.
- Xudong Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-n diodes and p-n-p heterojunction bipolar transistors with diamon...
- Patent number 10,497,817
- Issue date Dec 3, 2019
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a single or multiple layer porous gr...
- Patent number 10,396,160
- Issue date Aug 27, 2019
- Chang Gung University
- Chao-Sung Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,263,080
- Issue date Apr 16, 2019
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary barristor with schottky junction graphene semiconductor
- Patent number 10,243,076
- Issue date Mar 26, 2019
- Gwangju Institute of Science and Technology
- Byoung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,181,515
- Issue date Jan 15, 2019
- Kabushiki Kaisha Toshiba
- Mariko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a graphene base transistor with reduced collector...
- Patent number 10,158,009
- Issue date Dec 18, 2018
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene device and method of manufacturing the same
- Patent number 10,141,407
- Issue date Nov 27, 2018
- Samsung Electronics Co., Ltd.
- David Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,079,282
- Issue date Sep 18, 2018
- Kabushiki Kaisha Toshiba
- Mariko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional material
- Patent number 9,991,371
- Issue date Jun 5, 2018
- Samsung Electronics Co., Ltd.
- Un Jeong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a carrier and an electronic component
- Patent number 9,934,966
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming graphene nanopattern by using mask formed from bl...
- Patent number 9,748,108
- Issue date Aug 29, 2017
- Samsung Electronics Co., Ltd.
- Seongjun Jeong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical-channel type junction SiC power FET and method of manufact...
- Patent number 9,691,908
- Issue date Jun 27, 2017
- Renesas Electronics Corporation
- Kenichi Hisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate micro and nano diamond devices
- Patent number 9,620,596
- Issue date Apr 11, 2017
- Sandia Corporation
- Alfredo M. Morales
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene base transistor and method for making the same
- Patent number 9,590,045
- Issue date Mar 7, 2017
- IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut f...
- Andre Wolff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a graphene base transistor with reduced collector...
- Patent number 9,590,081
- Issue date Mar 7, 2017
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a carrier and an electronic component
- Patent number 9,449,873
- Issue date Sep 20, 2016
- Infineon Technologies AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate tunable tunnel diode
- Patent number 9,385,245
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-wavelength antenna enhanced bilayer graphene tunable photodetector
- Patent number 9,293,627
- Issue date Mar 22, 2016
- Sandia Corporation
- Thomas Edwin Beechem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching atomic layer of graphene
- Patent number 9,245,752
- Issue date Jan 26, 2016
- Research & Business Foundation Sungkyunkwan University
- Geun Young Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene base transistor with reduced collector area
- Patent number 9,236,432
- Issue date Jan 12, 2016
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having graphene base
- Patent number 9,184,266
- Issue date Nov 10, 2015
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical-channel type junction SiC power FET and method of manufact...
- Patent number 9,184,238
- Issue date Nov 10, 2015
- Renesas Electronics Corporation
- Kenichi Hisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode device
- Patent number 9,142,687
- Issue date Sep 22, 2015
- Kabushiki Kaisha Toshiba
- Yoichi Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 9,130,036
- Issue date Sep 8, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Tsutomu Kiyosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate tunable tunnel diode
- Patent number 8,957,463
- Issue date Feb 17, 2015
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having graphene base
- Patent number 8,901,536
- Issue date Dec 2, 2014
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM AND METHOD FOR TWO-DIMENSIONAL ELECTRONIC DEVICES
- Publication number 20230378279
- Publication date Nov 23, 2023
- Manichandra Morampudi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR
- Publication number 20230246074
- Publication date Aug 3, 2023
- Kabushiki Kaisha Toshiba
- Hideyuki TOMIZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Substrate Structure for a Semiconductor Power Module
- Publication number 20220344456
- Publication date Oct 27, 2022
- Hitachi Energy Switzerland AG
- David Guillon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED ENCAPSULATION MATERIAL FOR DIAMOND SEMICONDUCTORS
- Publication number 20210083070
- Publication date Mar 18, 2021
- Massachusetts Institute of Technology
- Michael Geis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FLUORINATED GRAPHENE SPACER
- Publication number 20190221645
- Publication date Jul 18, 2019
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Tunnel FET with Self-Aligned Heterojunction
- Publication number 20190115479
- Publication date Apr 18, 2019
- International Business Machines Corporation
- Chun Wing Yeung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FLUORINATED GRAPHENE SPACER
- Publication number 20180342585
- Publication date Nov 29, 2018
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Planarizing Graphene Layer
- Publication number 20180226252
- Publication date Aug 9, 2018
- TOKYO ELECTRON LIMITED
- Ryota IFUKU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE BASE TRANSISTOR AND METHOD FOR MAKING THE SAME
- Publication number 20160104778
- Publication date Apr 14, 2016
- IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTIT...
- Andre Wolff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR...
- Publication number 20160087087
- Publication date Mar 24, 2016
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A CARRIER AND AN ELECTRONIC COMPONENT
- Publication number 20140374906
- Publication date Dec 25, 2014
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-CHANNEL TYPE JUNCTION SIC POWER FET AND METHOD OF MANUFACT...
- Publication number 20140346528
- Publication date Nov 27, 2014
- RENESAS ELECTRONICS CORPORATION
- Kenichi HISADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA
- Publication number 20140284552
- Publication date Sep 25, 2014
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING ATOMIC LAYER OF GRAPHINE
- Publication number 20140206192
- Publication date Jul 24, 2014
- Research & Business Foundation Sungkyunkwan University
- Geun Young YEOM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TUNABLE TUNNEL DIODE
- Publication number 20140054551
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TUNABLE TUNNEL DIODE
- Publication number 20140057425
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING EPITAXIAL STRUCTURE
- Publication number 20130288458
- Publication date Oct 31, 2013
- YANG WEI
- B82 - NANO-TECHNOLOGY
Information Patent Application
EPITAXIAL STRUCTURE
- Publication number 20130285212
- Publication date Oct 31, 2013
- YANG WEI
- B82 - NANO-TECHNOLOGY
Information Patent Application
GRAPHENE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, ORGANI...
- Publication number 20130256629
- Publication date Oct 3, 2013
- Samsung Electronics Co., Ltd.
- Chang Seung LEE
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF MAKING HETEROJUNCTION DEVICES
- Publication number 20120193610
- Publication date Aug 2, 2012
- THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC)
- Eui-Tae Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
BORON-DOPED DIAMOND SEMICONDUCTOR
- Publication number 20120193644
- Publication date Aug 2, 2012
- Apollo Diamond, Inc.
- Robert Linares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Having Graphene Base
- Publication number 20120068157
- Publication date Mar 22, 2012
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Francis J. Kub
- B82 - NANO-TECHNOLOGY
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20120034737
- Publication date Feb 9, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20110070694
- Publication date Mar 24, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20110068352
- Publication date Mar 24, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20100289030
- Publication date Nov 18, 2010
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
BORON-DOPED DIAMOND SEMICONDUCTOR
- Publication number 20090311852
- Publication date Dec 17, 2009
- Apollo Diamond, Inc.
- Robert Linares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20090261347
- Publication date Oct 22, 2009
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080217626
- Publication date Sep 11, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080134959
- Publication date Jun 12, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH

the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Doped encapsulation material for diamond semiconductors

Transistor with fluorinated graphene spacer

Vertical tunnel FET with self-aligned heterojunction

Field effect transistor and manufacturing method thereof

P-n diodes and p-n-p heterojunction bipolar transistors with diamon...

Semiconductor structure having a single or multiple layer porous gr...

Transistor with fluorinated graphene spacer

Ternary barristor with schottky junction graphene semiconductor

Semiconductor device

Method of making a graphene base transistor with reduced collector...

Graphene device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device including two-dimensional material

Method for processing a carrier and an electronic component

Method of forming graphene nanopattern by using mask formed from bl...

Vertical-channel type junction SiC power FET and method of manufact...

Method to fabricate micro and nano diamond devices

Graphene base transistor and method for making the same

Method of making a graphene base transistor with reduced collector...

Method for processing a carrier and an electronic component

Gate tunable tunnel diode

Sub-wavelength antenna enhanced bilayer graphene tunable photodetector

Method for etching atomic layer of graphene

Graphene base transistor with reduced collector area

Transistor having graphene base

Vertical-channel type junction SiC power FET and method of manufact...

Semiconductor diode device

Semiconductor device and method for manufacturing same

Gate tunable tunnel diode

Transistor having graphene base

Patents Applicationslast 30 patents

SYSTEM AND METHOD FOR TWO-DIMENSIONAL ELECTRONIC DEVICES

GRAPHENE TRANSISTOR

Metal Substrate Structure for a Semiconductor Power Module

DOPED ENCAPSULATION MATERIAL FOR DIAMOND SEMICONDUCTORS

TRANSISTOR WITH FLUORINATED GRAPHENE SPACER

Vertical Tunnel FET with Self-Aligned Heterojunction

TRANSISTOR WITH FLUORINATED GRAPHENE SPACER

Method for Planarizing Graphene Layer

GRAPHENE BASE TRANSISTOR AND METHOD FOR MAKING THE SAME

METHOD OF MAKING A GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR...

METHOD FOR PROCESSING A CARRIER AND AN ELECTRONIC COMPONENT

VERTICAL-CHANNEL TYPE JUNCTION SIC POWER FET AND METHOD OF MANUFACT...

GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA

METHOD FOR ETCHING ATOMIC LAYER OF GRAPHINE

GATE TUNABLE TUNNEL DIODE

GATE TUNABLE TUNNEL DIODE

METHOD FOR MAKING EPITAXIAL STRUCTURE

EPITAXIAL STRUCTURE

GRAPHENE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, ORGANI...

METHODS OF MAKING HETEROJUNCTION DEVICES

BORON-DOPED DIAMOND SEMICONDUCTOR

Transistor Having Graphene Base

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

BORON-DOPED DIAMOND SEMICONDUCTOR

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME