the dielectric comprising two or more layers

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CPC
H01L28/56

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor

Current Industry

H01L28/56the dielectric comprising two or more layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Storage capacitor with multiple dielectrics
- Patent number 12,176,386
- Issue date Dec 24, 2024
- NANYA TECHNOLOGY CORPORATION
- Kai-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film laminate structure, integrated device including the same,...
- Patent number 12,166,066
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Kiyoung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of ferroelectric memory devices having stacked electrod...
- Patent number 12,137,574
- Issue date Nov 5, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for capacitor structure, capacitor structure a...
- Patent number 12,127,415
- Issue date Oct 22, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xingsong Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,125,872
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage isolated microelectronic device
- Patent number 12,119,373
- Issue date Oct 15, 2024
- Texas Instruments Incorporated
- Jeffrey Alan West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor integrated with logic
- Patent number 12,113,097
- Issue date Oct 8, 2024
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
FeRAM decoupling capacitor
- Patent number 12,114,509
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric random access memory device with seed layer
- Patent number 12,069,867
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric materials, capacitors and memory arrays
- Patent number 12,062,688
- Issue date Aug 13, 2024
- Micron Technology, Inc.
- Richard Beeler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric tunnel junction devices with a sparse seed layer and...
- Patent number 12,057,471
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-ferroelectric thin-film structure and electronic device includ...
- Patent number 12,051,717
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Boeun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional MIM capacitor having a comb structure and methods...
- Patent number 12,046,550
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Paul Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor apparatus including the same
- Patent number 12,034,036
- Issue date Jul 9, 2024
- Samsung Electronics Co., Ltd.
- Jeonggyu Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor comprising anti-ferroelectric layers and high-k dielectri...
- Patent number 12,034,035
- Issue date Jul 9, 2024
- SK Hynix Inc.
- Se Hun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asynchronous consensus circuit with majority gate based on non-line...
- Patent number 12,009,820
- Issue date Jun 11, 2024
- Kepler Computing Inc.
- Amrita Mathuriya
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor, method of controlling the same, and transistor including...
- Patent number 11,980,023
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
On-chip capacitors in semiconductor devices and methods for forming...
- Patent number 11,955,422
- Issue date Apr 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, capacitive memory structure, and methods thereof
- Patent number 11,950,430
- Issue date Apr 2, 2024
- FERROELECTRIC MEMORY GMBH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature-dependent capacitor
- Patent number 11,929,390
- Issue date Mar 12, 2024
- International Business Machines Corporation
- Kyle Schoneck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of manufacturing the same
- Patent number 11,929,393
- Issue date Mar 12, 2024
- Samsung Electronics Co., Ltd.
- Jungoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of SRAM device
- Patent number 11,917,804
- Issue date Feb 27, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and semiconductor device including the same
- Patent number 11,908,887
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
- Publication number 20250006778
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Haeryong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
- Publication number 20240429267
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Jeongil BANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240389348
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jungmin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR INTEGRATED WITH A LOGIC DEVICE
- Publication number 20240379733
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
FERAM DECOUPLING CAPACITOR
- Publication number 20240373645
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUD...
- Publication number 20240363679
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Boeun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...
- Publication number 20240347581
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong CHIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER
- Publication number 20240334709
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MIM CAPACITOR HAVING A COMB STRUCTURE AND METHODS...
- Publication number 20240332163
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che Wei YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRI...
- Publication number 20240313040
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Se Hun KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT COMPENSATION IN A MEMORY SYSTEM
- Publication number 20240274720
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Hiroshi Akamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR COMPONENT AND SEMICONDUCTOR PACKAGE INCLUDING CAPACITOR C...
- Publication number 20240222263
- Publication date Jul 4, 2024
- Samsung Electro-Mechanics Co., Ltd.
- Jae Hoon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND ELECTRONIC A...
- Publication number 20240213303
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Boeun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING...
- Publication number 20240213144
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240186369
- Publication date Jun 6, 2024
- Samsung Electronics Co., Ltd.
- Jungoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF FERROELECTRIC MEMORY DEVICES HAVING STACKED ELECTROD...
- Publication number 20240099018
- Publication date Mar 21, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
MATERIAL DEPOSITION METHOD AND MICROSYSTEM THEREWITH OBTAINED
- Publication number 20240088202
- Publication date Mar 14, 2024
- LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)
- Naveen ARUCHAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
- Publication number 20240088203
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Jeonggyu SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240072106
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Jungmin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR CAPACITOR STRUCTURE, CAPACITOR STRUCTURE A...
- Publication number 20240032313
- Publication date Jan 25, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xingsong SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORS OF SEMICONDUCTOR DEVICE CAPABLE OF OPERATING IN HIGH FRE...
- Publication number 20230420487
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- Jaeho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH MULTILAYERED CAPACITOR DIELECTRIC STRUCTURE
- Publication number 20230413521
- Publication date Dec 21, 2023
- NANYA TECHNOLOGY CORPORATION
- CHIH-HSIUNG HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20230411444
- Publication date Dec 21, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS
- Publication number 20230387188
- Publication date Nov 30, 2023
- NANYA TECHNOLOGY CORPORATION
- KAI-HUNG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361161
- Publication date Nov 9, 2023
- Samsung Electronics Co., LTD
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361160
- Publication date Nov 9, 2023
- Samsung Electronics Co., Ltd.
- KYOOHO JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...
- Publication number 20230361162
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong CHIA
- H01 - BASIC ELECTRIC ELEMENTS

the dielectric comprising two or more layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Storage capacitor with multiple dielectrics

Thin film laminate structure, integrated device including the same,...

Integration of ferroelectric memory devices having stacked electrod...

Manufacturing method for capacitor structure, capacitor structure a...

Semiconductor device

High voltage isolated microelectronic device

Ferroelectric capacitor integrated with logic

FeRAM decoupling capacitor

Ferroelectric random access memory device with seed layer

Dielectric materials, capacitors and memory arrays

Ferroelectric tunnel junction devices with a sparse seed layer and...

Anti-ferroelectric thin-film structure and electronic device includ...

Three dimensional MIM capacitor having a comb structure and methods...

Semiconductor device and semiconductor apparatus including the same

Capacitor comprising anti-ferroelectric layers and high-k dielectri...

Asynchronous consensus circuit with majority gate based on non-line...

Capacitor, method of controlling the same, and transistor including...

On-chip capacitors in semiconductor devices and methods for forming...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Memory cell, capacitive memory structure, and methods thereof

Temperature-dependent capacitor

Integrated circuit devices and methods of manufacturing the same

Doped polar layers and semiconductor device incorporating same

Manufacturing method of SRAM device

Manganese-doped perovskite layers and semiconductor device incorpor...

Capacitor and semiconductor device including the same

MFM capacitor and process for forming such

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Patents Applicationslast 30 patents

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICES

FERROELECTRIC CAPACITOR INTEGRATED WITH A LOGIC DEVICE

FERAM DECOUPLING CAPACITOR

ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUD...

Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER

THREE DIMENSIONAL MIM CAPACITOR HAVING A COMB STRUCTURE AND METHODS...

CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRI...

CONCURRENT COMPENSATION IN A MEMORY SYSTEM

CAPACITOR COMPONENT AND SEMICONDUCTOR PACKAGE INCLUDING CAPACITOR C...

CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND ELECTRONIC A...

ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING...

INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME

INTEGRATION OF FERROELECTRIC MEMORY DEVICES HAVING STACKED ELECTROD...

MATERIAL DEPOSITION METHOD AND MICROSYSTEM THEREWITH OBTAINED

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

INTEGRATED CIRCUIT DEVICE

MANUFACTURING METHOD FOR CAPACITOR STRUCTURE, CAPACITOR STRUCTURE A...

CAPACITORS OF SEMICONDUCTOR DEVICE CAPABLE OF OPERATING IN HIGH FRE...

MEMORY DEVICE WITH MULTILAYERED CAPACITOR DIELECTRIC STRUCTURE

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...